Influence of Single Impurity Atoms on the Structure, Electronic, and Magnetic Properties of Ni5Clusters

2007 ◽  
Vol 111 (11) ◽  
pp. 2067-2076 ◽  
Author(s):  
Petko St. Petkov ◽  
Georgi N. Vayssilov ◽  
Sven Krüger ◽  
Notker Rösch
Nanomaterials ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 311 ◽  
Author(s):  
Ke Wang ◽  
Hai Wang ◽  
Min Zhang ◽  
Wei Zhao ◽  
Yan Liu ◽  
...  

Recently, substitutional doping is proved to be an effective route to induce magnetism to black phosphorene for its application in spintronics. Herein, we investigate the thermodynamic stability, electronic and magnetic properties of doped black phosphorene with multi Al or Cl atoms using first-principles calculations. We find these doped phosphorenes are thermodynamically stable at 0 K and the stability first improves and then deteriorates with the number of dopant atom increasing. Corresponding to the variety of stability, the amount of electrons transferred between impurity and neighboring phosphorus atoms also first increase and then reduce. However, the band gap of Al-doped phosphorene reduces monotonically from 0.44 eV to 0.13 eV while that of Cl-doped phosphorene first decreases from 0.10 eV to 0 and then becomes flat, which is a result of the impurity levels emerging and splitting. Besides, in doped phosphorenes with an even number of impurity atoms, the antiferromagnetic order is favored by energy. Through computing the magnetic moment and spin distribution, we further confirm the antiferromagnetic order existing only in the doped phosphorenes with two and four Cl atoms. These results may provide some help for future applications of black phosphorene in spintronics.


2006 ◽  
Vol 8 (11) ◽  
pp. 1282 ◽  
Author(s):  
Petko St. Petkov ◽  
Georgi N. Vayssilov ◽  
Sven Krüger ◽  
Notker Rösch

2019 ◽  
Vol 109 ◽  
pp. 93-100 ◽  
Author(s):  
Xu Zhao ◽  
Qingqing Yang ◽  
Hui Zhang ◽  
Yonghui Gao ◽  
Haiyang Wang ◽  
...  

2021 ◽  
Vol 129 (15) ◽  
pp. 155104
Author(s):  
Qian Wang ◽  
Nannan Han ◽  
Xuyang Zhang ◽  
Chenhui Zhang ◽  
Xixiang Zhang ◽  
...  

Author(s):  
Prayoonsak Pluengphon ◽  
Prutthipong Tsuppayakorn-aek ◽  
Burapat Inceesungvorn ◽  
Udomsilp Pinsook ◽  
Thiti Bovornratanaraks

RSC Advances ◽  
2021 ◽  
Vol 11 (30) ◽  
pp. 18371-18380
Author(s):  
Erik Bhekti Yutomo ◽  
Fatimah Arofiati Noor ◽  
Toto Winata

The number of dopant atoms is a parameter that can effectively tune the electronic and magnetic properties of graphitic and pyridinic N-doped graphene.


2020 ◽  
Vol 4 (10) ◽  
Author(s):  
Dietmar Czubak ◽  
Samuel Gaucher ◽  
Lars Oppermann ◽  
Jens Herfort ◽  
Klaus Zollner ◽  
...  

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