Solution processed 1D polymer/SWCNT composite arrays for high-performance field effect transistors

2021 ◽  
Author(s):  
Xiaoyu Fan ◽  
Jingrun Yang ◽  
Bo Lei ◽  
Zhenghao Yang ◽  
Pengda Che ◽  
...  
Keyword(s):  
Flexible Electronics ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Semiconducting Polymers ◽  
Large Area ◽  
Solution Processed

Semiconducting polythiophene polymers are promising materials for the generation of large-area and flexible electronics. However, field effect transistors (FETs) using semiconducting polymers as the channel material possess relatively poor mobility,...

Organic field-effect transistors based on tetrathiafulvalene derivatives

2008 ◽  
Vol 80 (11) ◽  
pp. 2405-2423 ◽  
Author(s):  
Xike Gao ◽  
Wenfeng Qiu ◽  
Yunqi Liu ◽  
Gui Yu ◽  
Daoben Zhu
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Device Fabrication ◽  
Organic Field Effect Transistors ◽  
Large Area ◽  
Solution Processed

In recent years, tetrathiafulvalene (TTF) and its derivatives have been used as semiconducting materials for organic field-effect transistors (OFETs). In this review, we summarize the recent progress in the field of TTF-based OFETs. We introduce the structure and operation of OFETs, and focus on TTF derivatives used in OFETs. TTF derivatives used in OFETs can be divided into three parts by the semiconductor's morphology and the device fabrication technique: (1) TTF derivatives used for single-crystal OFETs, (2) TTF derivatives used for vacuum-deposited thin-film OFETs, and (3) TTF derivatives used for solution-processed thin-film OFETs. The single-crystal OFETs based on TTF derivatives were fabricated by drop-casting method and showed high performance, with the mobility up to 1.4 cm2/Vs. The vacuum-deposited thin-film OFETs based on TTF derivatives were well developed, some of which have shown high performance comparable to that of amorphous silicon, with good air-stability. Although the mobilities of most solution-processed OFETs based on TTF derivatives are limited at 10-2 cm2/Vs, the study on solution-processable TTF derivatives and their devices are promising, because of their low-cost, large-area-coverage virtues. The use of organic charge-transfer (OCT) compounds containing TTF or its derivatives in OFETs is also included in this review.

scholarly journals Nanonet: Low-temperature-processed tellurium nanowire network for scalable p-type field-effect transistors and a highly sensitive phototransistor array

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Muhammad Naqi ◽  
Kyung Hwan Choi ◽  
Hocheon Yoo ◽  
Sudong Chae ◽  
Bum Jun Kim ◽  
...  
Keyword(s):  
Low Temperature ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Optical Measurements ◽  
Electrical Performance ◽  
Large Area ◽  
Nanowire Network ◽  
P Type ◽  
Nanowire Networks

AbstractLow-temperature-processed semiconductors are an emerging need for next-generation scalable electronics, and these semiconductors need to feature large-area fabrication, solution processability, high electrical performance, and wide spectral optical absorption properties. Although various strategies of low-temperature-processed n-type semiconductors have been achieved, the development of high-performance p-type semiconductors at low temperature is still limited. Here, we report a unique low-temperature-processed method to synthesize tellurium nanowire networks (Te-nanonets) over a scalable area for the fabrication of high-performance large-area p-type field-effect transistors (FETs) with uniform and stable electrical and optical properties. Maximum mobility of 4.7 cm2/Vs, an on/off current ratio of 1 × 104, and a maximum transconductance of 2.18 µS are achieved. To further demonstrate the applicability of the proposed semiconductor, the electrical performance of a Te-nanonet-based transistor array of 42 devices is also measured, revealing stable and uniform results. Finally, to broaden the applicability of p-type Te-nanonet-based FETs, optical measurements are demonstrated over a wide spectral range, revealing an exceptionally uniform optical performance.

Solution-processed and High-performance Ionic-paper Gated Field-effect Transistors from Two-dimensional Layered Semiconductor Nanosheets for High Thermal Resolution

2022 ◽  
Author(s):  
Guokeng Liu ◽  
Chunyang Jin ◽  
Binlai Hu ◽  
Lihua Zhang ◽  
Guozheng Zeng ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Building Blocks ◽  
Two Dimensional ◽  
Layered Semiconductor ◽  
Solution Processed ◽  
Scalable Production

The remarkable properties of layered semiconductor nanosheets (LSNs), such as scalable production, bandgap tunability and mechanical flexibility have promoted them as promising building blocks for nanoelectronics and bioelectronics. However, it...

Graphene as an electrode for solution-processed electron-transporting organic transistors

Nanoscale ◽  
2017 ◽  
Vol 9 (29) ◽  
pp. 10178-10185 ◽  
Author(s):  
Subir Parui ◽  
Mário Ribeiro ◽  
Ainhoa Atxabal ◽  
Roger Llopis ◽  
Fèlix Casanova ◽  
...  
Keyword(s):  
Organic Electronics ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Organic Transistors ◽  
Organic Field Effect Transistors ◽  
Solution Processed

High-performance lateral and vertical organic field-effect transistors are demonstrated based on graphene electrodes and solution-processed N2200 polymers for advanced organic-electronics.

High-performance n-channel field effect transistors based on solution-processed dicyanomethylene-substituted tetrathienoquinoid

RSC Advances ◽  
2014 ◽  
Vol 4 (33) ◽  
pp. 16939-16943 ◽  
Author(s):  
Qinghe Wu ◽  
Xiaolan Qiao ◽  
Qiuliu Huang ◽  
Jie Li ◽  
Yu Xiong ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Molecular Packing ◽  
Solution Processed ◽  
Solution Processable

A solution-processable tetrathienoquinoidal semiconductorCMHTwas synthesized and characterized, and the correlation between the molecular packing of theCMTHand transistor performance was studied.

scholarly journals Direct roll transfer printed silicon nanoribbon arrays based high-performance flexible electronics

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Ayoub Zumeit ◽  
Abhishek Singh Dahiya ◽  
Adamos Christou ◽  
Dhayalan Shakthivel ◽  
Ravinder Dahiya
Keyword(s):  
Flexible Electronics ◽  
High Performance ◽  
Printed Electronics ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Single Step ◽  
High Yield ◽  
Transfer Printing ◽  
Large Area ◽  
Direct Printing

AbstractTransfer printing of high mobility inorganic nanostructures, using an elastomeric transfer stamp, is a potential route for high-performance printed electronics. Using this method to transfer nanostructures with high yield, uniformity and excellent registration over large area remain a challenge. Herein, we present the ‘direct roll transfer’ as a single-step process, i.e., without using any elastomeric stamp, to print nanoribbons (NRs) on different substrates with excellent registration (retaining spacing, orientation, etc.) and transfer yield (∼95%). The silicon NR based field-effect transistors printed using direct roll transfer consistently show high performance i.e., high on-state current (Ion) >1 mA, high mobility (μeff) >600 cm2/Vs, high on/off ratio (Ion/off) of around 106, and low hysteresis (<0.4 V). The developed versatile and transformative method can also print nanostructures based on other materials such as GaAs and thus could pave the way for direct printing of high-performance electronics on large-area flexible substrates.

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