Tunable valley splitting and anomalous valley Hall effect in VTe2/Ga2S3 heterostructures

2020 ◽  
Vol 8 (42) ◽  
pp. 14895-14901
Author(s):  
Xikui Ma ◽  
Xiaofei Shao ◽  
Yingcai Fan ◽  
Jian Liu ◽  
Xukun Feng ◽  
...  
Keyword(s):  
Hall Effect ◽  
Fundamental Interest ◽  
Valley Splitting ◽  
Valley Hall Effect

The modulation of valley splitting is not only of fundamental interest but is also crucial to valleytronics.

Tunable valley splitting and an anomalous valley Hall effect in hole-doped WS2 by proximity coupling with a ferromagnetic MnO2 monolayer

Nanoscale ◽  
2019 ◽  
Vol 11 (28) ◽  
pp. 13567-13575 ◽  
Author(s):  
Baozeng Zhou ◽  
Zheng Li ◽  
Jiaming Wang ◽  
Xuechen Niu ◽  
Chongbiao Luan
Keyword(s):  
Hall Effect ◽  
Valley Splitting ◽  
Valley Hall Effect ◽  
Proximity Coupling

Schematic of the WS2/MnO2 heterostructure for valleytronic devices and the diagram of the anomalous valley Hall effect.

scholarly journals Ultrafast non-excitonic valley Hall effect in MoS2/WTe2 heterobilayers

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Jekwan Lee ◽  
Wonhyeok Heo ◽  
Myungjun Cha ◽  
Kenji Watanabe ◽  
Takashi Taniguchi ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantitative Information ◽  
Exciton Energy ◽  
Electron Hole ◽  
Kerr Rotation ◽  
Polarized Electrons ◽  
Spatially Resolved ◽  
Long Valley ◽  
Bound Electron ◽  
Valley Hall Effect

AbstractThe valley Hall effect (VHE) in two-dimensional (2D) van der Waals (vdW) crystals is a promising approach to study the valley pseudospin. Most experiments so far have used bound electron-hole pairs (excitons) through local photoexcitation. However, the valley depolarization of such excitons is fast, so that several challenges remain to be resolved. We address this issue by exploiting a unipolar VHE using a heterobilayer made of monolayer MoS2/WTe2 to exhibit a long valley-polarized lifetime due to the absence of electron-hole exchange interaction. The unipolar VHE is manifested by reduced photoluminescence at the MoS2 A exciton energy. Furthermore, we provide quantitative information on the time-dependent valley Hall dynamics by performing the spatially-resolved ultrafast Kerr-rotation microscopy; we find that the valley-polarized electrons persist for more than 4 nanoseconds and the valley Hall mobility exceeds 4.49 × 103 cm2/Vs, which is orders of magnitude larger than previous reports.

scholarly journals Microscopic Origin of the Valley Hall Effect in Transition Metal Dichalcogenides Revealed by Wavelength-Dependent Mapping

Nano Letters ◽  
2017 ◽  
Vol 17 (9) ◽  
pp. 5719-5725 ◽  
Author(s):  
Nicolas Ubrig ◽  
Sanghyun Jo ◽  
Marc Philippi ◽  
Davide Costanzo ◽  
Helmuth Berger ◽  
...  
Keyword(s):  
Transition Metal ◽  
Hall Effect ◽  
Transition Metal Dichalcogenides ◽  
Metal Dichalcogenides ◽  
Valley Hall Effect ◽  
Microscopic Origin

scholarly journals Spatial Separation of Carrier Spin by the Valley Hall Effect in Monolayer WSe2 Transistors

Nano Letters ◽  
2019 ◽  
Vol 19 (2) ◽  
pp. 770-774 ◽  
Author(s):  
Elyse Barré ◽  
Jean Anne C. Incorvia ◽  
Suk Hyun Kim ◽  
Connor J. McClellan ◽  
Eric Pop ◽  
...  
Keyword(s):  
Hall Effect ◽  
Spatial Separation ◽  
Valley Hall Effect

scholarly journals Edge states and the valley Hall effect

2020 ◽  
Vol 368 ◽  
pp. 107142 ◽  
Author(s):  
A. Drouot ◽  
M.I. Weinstein
Keyword(s):  
Hall Effect ◽  
Edge States ◽  
Valley Hall Effect

Photoinduced quantum spin/valley Hall effect and its electrical manipulation in silicene

2017 ◽  
Vol 121 (20) ◽  
pp. 205106 ◽  
Author(s):  
Hairui Bao ◽  
Wenhu Liao ◽  
Xincheng Zhang ◽  
Hong Yang ◽  
Xuexian Yang ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Spin ◽  
Electrical Manipulation ◽  
Valley Hall Effect

Coherent photogalvanic valley Hall effect

JETP Letters ◽  
2017 ◽  
Vol 106 (9) ◽  
pp. 565-570 ◽  
Author(s):  
V. M. Kovalev ◽  
W.-K. Tse ◽  
M. V. Entin
Keyword(s):  
Hall Effect ◽  
Valley Hall Effect
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