Tunable valley splitting and an anomalous valley Hall effect in hole-doped WS2 by proximity coupling with a ferromagnetic MnO2 monolayer

Nanoscale ◽  
2019 ◽  
Vol 11 (28) ◽  
pp. 13567-13575 ◽  
Author(s):  
Baozeng Zhou ◽  
Zheng Li ◽  
Jiaming Wang ◽  
Xuechen Niu ◽  
Chongbiao Luan
Keyword(s):  
Hall Effect ◽  
Valley Splitting ◽  
Valley Hall Effect ◽  
Proximity Coupling

Schematic of the WS2/MnO2 heterostructure for valleytronic devices and the diagram of the anomalous valley Hall effect.

Tunable valley splitting and anomalous valley Hall effect in VTe2/Ga2S3 heterostructures

2020 ◽  
Vol 8 (42) ◽  
pp. 14895-14901
Author(s):  
Xikui Ma ◽  
Xiaofei Shao ◽  
Yingcai Fan ◽  
Jian Liu ◽  
Xukun Feng ◽  
...  
Keyword(s):  
Hall Effect ◽  
Fundamental Interest ◽  
Valley Splitting ◽  
Valley Hall Effect

The modulation of valley splitting is not only of fundamental interest but is also crucial to valleytronics.

scholarly journals Ultrafast non-excitonic valley Hall effect in MoS2/WTe2 heterobilayers

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Jekwan Lee ◽  
Wonhyeok Heo ◽  
Myungjun Cha ◽  
Kenji Watanabe ◽  
Takashi Taniguchi ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantitative Information ◽  
Exciton Energy ◽  
Electron Hole ◽  
Kerr Rotation ◽  
Polarized Electrons ◽  
Spatially Resolved ◽  
Long Valley ◽  
Bound Electron ◽  
Valley Hall Effect

AbstractThe valley Hall effect (VHE) in two-dimensional (2D) van der Waals (vdW) crystals is a promising approach to study the valley pseudospin. Most experiments so far have used bound electron-hole pairs (excitons) through local photoexcitation. However, the valley depolarization of such excitons is fast, so that several challenges remain to be resolved. We address this issue by exploiting a unipolar VHE using a heterobilayer made of monolayer MoS2/WTe2 to exhibit a long valley-polarized lifetime due to the absence of electron-hole exchange interaction. The unipolar VHE is manifested by reduced photoluminescence at the MoS2 A exciton energy. Furthermore, we provide quantitative information on the time-dependent valley Hall dynamics by performing the spatially-resolved ultrafast Kerr-rotation microscopy; we find that the valley-polarized electrons persist for more than 4 nanoseconds and the valley Hall mobility exceeds 4.49 × 103 cm2/Vs, which is orders of magnitude larger than previous reports.

scholarly journals Microscopic Origin of the Valley Hall Effect in Transition Metal Dichalcogenides Revealed by Wavelength-Dependent Mapping

Nano Letters ◽  
2017 ◽  
Vol 17 (9) ◽  
pp. 5719-5725 ◽  
Author(s):  
Nicolas Ubrig ◽  
Sanghyun Jo ◽  
Marc Philippi ◽  
Davide Costanzo ◽  
Helmuth Berger ◽  
...  
Keyword(s):  
Transition Metal ◽  
Hall Effect ◽  
Transition Metal Dichalcogenides ◽  
Metal Dichalcogenides ◽  
Valley Hall Effect ◽  
Microscopic Origin

scholarly journals Spatial Separation of Carrier Spin by the Valley Hall Effect in Monolayer WSe2 Transistors

Nano Letters ◽  
2019 ◽  
Vol 19 (2) ◽  
pp. 770-774 ◽  
Author(s):  
Elyse Barré ◽  
Jean Anne C. Incorvia ◽  
Suk Hyun Kim ◽  
Connor J. McClellan ◽  
Eric Pop ◽  
...  
Keyword(s):  
Hall Effect ◽  
Spatial Separation ◽  
Valley Hall Effect

scholarly journals Edge states and the valley Hall effect

2020 ◽  
Vol 368 ◽  
pp. 107142 ◽  
Author(s):  
A. Drouot ◽  
M.I. Weinstein
Keyword(s):  
Hall Effect ◽  
Edge States ◽  
Valley Hall Effect

Photoinduced quantum spin/valley Hall effect and its electrical manipulation in silicene

2017 ◽  
Vol 121 (20) ◽  
pp. 205106 ◽  
Author(s):  
Hairui Bao ◽  
Wenhu Liao ◽  
Xincheng Zhang ◽  
Hong Yang ◽  
Xuexian Yang ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Spin ◽  
Electrical Manipulation ◽  
Valley Hall Effect

Coherent photogalvanic valley Hall effect

JETP Letters ◽  
2017 ◽  
Vol 106 (9) ◽  
pp. 565-570 ◽  
Author(s):  
V. M. Kovalev ◽  
W.-K. Tse ◽  
M. V. Entin
Keyword(s):  
Hall Effect ◽  
Valley Hall Effect
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