Enhanced hydrolytic and electrical stability of eco-friendly processed polyimide gate dielectrics for organic transistors

2020 ◽  
Vol 8 (41) ◽  
pp. 14370-14377
Author(s):  
Yuri Jeong ◽  
Hyunjin Park ◽  
Yujin So ◽  
Hyun Jung Mun ◽  
Tae Joo Shin ◽  
...  
Keyword(s):  
Gate Dielectrics ◽  
Hydrolytic Stability ◽  
Significant Enhancement ◽  
Organic Transistors ◽  
Electrical Stability ◽  
Aromatic Polyimides

Aromatic polyimides based on BPDA–pPDA incorporated with DMIZ exhibit a significant enhancement in hydrolytic stability and allow eco-friendly fabrication.

Solution‐Processed Organic Transistors with Excellent Electrical Stability under Ambient Conditions

2019 ◽  
Vol 5 (10) ◽  
pp. 1900295 ◽  
Author(s):  
Michel Kettner ◽  
Zhou Mi ◽  
Daniel Kälblein ◽  
Jochen Brill ◽  
Paul W. M. Blom ◽  
...  
Keyword(s):  
Organic Transistors ◽  
Ambient Conditions ◽  
Electrical Stability ◽  
Solution Processed

Ultralow-Noise Organic Transistors Based on Polymeric Gate Dielectrics with Self-Assembled Modifiers

2019 ◽  
Vol 11 (44) ◽  
pp. 41561-41569 ◽  
Author(s):  
Masaya Kondo ◽  
Takafumi Uemura ◽  
Fumitaka Ishiwari ◽  
Takashi Kajitani ◽  
Yoshiaki Shoji ◽  
...  
Keyword(s):  
Gate Dielectrics ◽  
Organic Transistors ◽  
Self Assembled

Gate Dielectric Dependent on Pentacene Growth and Electrical Stability in OTFTs

2006 ◽  
Vol 965 ◽  
Author(s):  
Kim Chang Su ◽  
Jo Sung Jin ◽  
Lee Sung Won ◽  
Baik Hong Koo
Keyword(s):  
Surface Roughness ◽  
Surface Energy ◽  
Functional Groups ◽  
Surface State ◽  
Spin Coating ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Dielectric Surface ◽  
Electrical Stability ◽  
Oh Groups

ABSTRACTWe report on the effects of modifying the gate dielectrics by spin coating of HMDS, PVP and PVA which cause different surface energy and surface roughness owing to the different functional groups. In changing the surface state with applying various surface treatments, I-V and C-V measurements of the OTFTs were performed. The PVP-coated OTFTs, which has smoother and lesser amount of OH-groups on the gate dielectric surface, showed enhanced pentacene growth and nearly free hysteresis behavior than that of the HMDS and PVA-coated OTFTs.

Electrical stability study of polymer-based organic transistors in ambient air using an active semiconducting/insulating polyblend-based pseudo-bilayer

2020 ◽  
Vol 4 (6) ◽  
pp. 1679-1688
Author(s):  
Bo-Ren Lin ◽  
Horng-Long Cheng ◽  
Hung-Han Lin ◽  
Fu-Chiao Wu ◽  
Jia-Hui Lin ◽  
...  
Keyword(s):  
Microphase Separation ◽  
Ambient Air ◽  
Stability Study ◽  
Organic Transistors ◽  
Electrical Stability

Polymeric transistors with unexpected nondecaying features even in ambient air are fabricated based on a P3HT/PMMA pseudo-bilayer with microphase separation morphology.

Investigations of Metal Gate Electrodes on HfO2 Gate Dielectrics

2004 ◽  
Vol 811 ◽  
Author(s):  
Jamie Schaeffer ◽  
Sri Samavedam ◽  
Leonardo Fonseca ◽  
Cristiano Capasso ◽  
Olubunmi Adetutu ◽  
...  
Keyword(s):  
Fermi Level ◽  
Work Function ◽  
Gate Dielectrics ◽  
Electrical Stability ◽  
Metal Gate ◽  
Fermi Level Pinning ◽  
Poly Silicon ◽  
Metal Work Function ◽  
The Impact ◽  
Metal Work

ABSTRACTAs traditional poly-silicon gated MOSFET devices scale, the additional series capacitance due to poly-silicon depletion becomes an increasingly large fraction of the total gate capacitance, excessive boron penetration causes threshold voltage shifts, and the gate resistance is elevated. To solve these problems and continue aggressive device scaling we are studying metal electrodes with suitable work-functions and sufficient physical and electrical stability. Our studies of metal gates on HfO2 indicate that excessive inter-diffusion, inadequate phase stability, and interfacial reactions are mechanisms of failure at source drain activation temperatures that must be considered during the electrode selection process. Understanding the physical properties of the metal gate – HfO2 interface is critical to understanding the electrical behavior of MOS devices. Of particular interest is Fermi level pinning, a phenomenon that occurs at metal – dielectric interfaces which causes undesirable shifts in the effective metal work function. The magnitude of Fermi level pinning on HfO2 electrodes is studied with Pt and LaB6 electrodes. In addition, the intrinsic and extrinsic contributions to Fermi level pinning of platinum electrodes on HfO2 gate dielectrics are investigated by examining the impact of oxygen and forming gas anneals on the work function of platinum-HfO2-silicon capacitors. The presence of interfacial oxygen vacancies or Pt-Hf bonds is believed to be responsible for a degree of pinning that is stronger than predicted from the MIGS model alone. Interface chemistry and defects influence the effective metal work function.

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