Dielectric dispersion and superior thermal characteristics in isotope-enriched hexagonal boron nitride thin films: evaluation as thermally self-dissipating dielectrics for GaN transistors
Keyword(s):
The isotope-enriched h-BN films exhibited a dielectrics dispersion with low dielectric loss, below 1.3%. Their optical band gaps depend on isotopic composition (5.54 to 5.79 eV). Thermal conductivity of pure B10/11N are enhanced by around 231%.
2011 ◽
Vol 23
(5)
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pp. 919-928
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2017 ◽
Vol 24
(2)
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pp. 784-790
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2017 ◽
Vol 152
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pp. 36-45
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2018 ◽
Vol 153
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pp. 1-8
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