Unconventional out-of-plane domain inversion via in-plane ionic migration in a van der Waals ferroelectric

2020 ◽  
Vol 8 (21) ◽  
pp. 6966-6971 ◽  
Author(s):  
Dong-Dong Xu ◽  
Ru-Ru Ma ◽  
Yi-Feng Zhao ◽  
Zhao Guan ◽  
Qi-Lan Zhong ◽  
...  
Keyword(s):  
Electric Field ◽  
Van Der Waals ◽  
Plane Domain ◽  
Out Of Plane ◽  
Domain Inversion

Unconventional out-of-plane domain inversion induced by an in-plane electric field has been observed and clarified experimentally.

Ferroelectricity and phase transitions in In2Se3 van der Waals material

Nanoscale ◽  
2020 ◽  
Vol 12 (44) ◽  
pp. 22688-22697
Author(s):  
Maryam Soleimani ◽  
Mahdi Pourfath
Keyword(s):  
Phase Transitions ◽  
Electric Field ◽  
Applied Electric Field ◽  
Room Temperature ◽  
Van Der Waals ◽  
Out Of Plane

Van der Waals layered α-In2Se3 has shown out-of-plane ferroelectricity down to the bilayer and monolayer thicknesses at room temperature that can be switched by an applied electric field.

Biaxial strain, electric field and interlayer distance-tailored electronic structure and magnetic properties of two-dimensional g-C3N4/Li-adsorbed Cr2Ge2Te6 van der Waals heterostructures

2021 ◽  
Vol 23 (10) ◽  
pp. 6171-6181
Author(s):  
Yaoqi Gao ◽  
Baozeng Zhou ◽  
Xiaocha Wang
Keyword(s):  
Magnetic Properties ◽  
Electronic Structure ◽  
Electric Field ◽  
Van Der Waals ◽  
Interlayer Distance ◽  
Two Dimensional ◽  
Biaxial Strain ◽  
Van Der Waals Heterostructures

It is found that the biaxial strain, electric field and interlayer distance can effectively modulate the electronic structure and magnetic properties of two-dimensional van der Waals heterostructures.

scholarly journals Layer- and gate-tunable spin-orbit coupling in a high-mobility few-layer semiconductor

2021 ◽  
Vol 7 (5) ◽  
pp. eabe2892
Author(s):  
Dmitry Shcherbakov ◽  
Petr Stepanov ◽  
Shahriar Memaran ◽  
Yaxian Wang ◽  
Yan Xin ◽  
...  
Keyword(s):  
Electric Field ◽  
High Mobility ◽  
Orbit Coupling ◽  
Spin Splitting ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Quantum Oscillations ◽  
Out Of Plane ◽  
Order Of Magnitude ◽  
Spin Degeneracy

Spin-orbit coupling (SOC) is a relativistic effect, where an electron moving in an electric field experiences an effective magnetic field in its rest frame. In crystals without inversion symmetry, it lifts the spin degeneracy and leads to many magnetic, spintronic, and topological phenomena and applications. In bulk materials, SOC strength is a constant. Here, we demonstrate SOC and intrinsic spin splitting in atomically thin InSe, which can be modified over a broad range. From quantum oscillations, we establish that the SOC parameter α is thickness dependent; it can be continuously modulated by an out-of-plane electric field, achieving intrinsic spin splitting tunable between 0 and 20 meV. Unexpectedly, α could be enhanced by an order of magnitude in some devices, suggesting that SOC can be further manipulated. Our work highlights the extraordinary tunability of SOC in 2D materials, which can be harnessed for in operando spintronic and topological devices and applications.

scholarly journals Intercorrelated ferroelectrics in 2D van der Waals materials

2021 ◽  
Author(s):  
Yan Liang ◽  
Shiying Shen ◽  
Baibiao Huang ◽  
Ying Dai ◽  
Yandong Ma
Keyword(s):  
Van Der Waals ◽  
Out Of Plane ◽  
Fundamental Phenomenon ◽  
Van Der Waals Materials

2D intercorrelated ferroelectrics, exhibiting a coupled in-plane and out-of-plane ferroelectricity, is a fundamental phenomenon in the field of condensed-mater physics. The current research is based on the paradigm of bi-directional...

scholarly journals A van der Waals antiferromagnetic topological insulator with weak interlayer magnetic coupling

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Chaowei Hu ◽  
Kyle N. Gordon ◽  
Pengfei Liu ◽  
Jinyu Liu ◽  
Xiaoqing Zhou ◽  
...  
Keyword(s):  
Van Der Waals ◽  
Surface States ◽  
Magnetic Coupling ◽  
Anomalous Hall Effect ◽  
Saturation Field ◽  
Angle Resolved Photoemission Spectroscopy ◽  
Ideal System ◽  
Out Of Plane ◽  
Weak Interlayer ◽  
Quantum Phenomena

AbstractMagnetic topological insulators (TI) provide an important material platform to explore quantum phenomena such as quantized anomalous Hall effect and Majorana modes, etc. Their successful material realization is thus essential for our fundamental understanding and potential technical revolutions. By realizing a bulk van der Waals material MnBi4Te7 with alternating septuple [MnBi2Te4] and quintuple [Bi2Te3] layers, we show that it is ferromagnetic in plane but antiferromagnetic along the c axis with an out-of-plane saturation field of ~0.22 T at 2 K. Our angle-resolved photoemission spectroscopy measurements and first-principles calculations further demonstrate that MnBi4Te7 is a Z2 antiferromagnetic TI with two types of surface states associated with the [MnBi2Te4] or [Bi2Te3] termination, respectively. Additionally, its superlattice nature may make various heterostructures of [MnBi2Te4] and [Bi2Te3] layers possible by exfoliation. Therefore, the low saturation field and the superlattice nature of MnBi4Te7 make it an ideal system to investigate rich emergent phenomena.

scholarly journals Consecutive Vibrational Redistribution and Predissociation Processes in s-Tetrazine–Argon Van Der Waals Complexes

1983 ◽  
Vol 2 (3-4) ◽  
pp. 125-135 ◽  
Author(s):  
J. J. F. Ramaekers ◽  
L. B. Krijnen ◽  
H. J. Lips ◽  
J. Langelaar ◽  
R. P. H. Rettschnick
Keyword(s):  
Decay Time ◽  
Van Der Waals ◽  
Stagnation Pressure ◽  
Van Der Waals Complexes ◽  
Supersonic Expansion ◽  
Vibrational Predissociation ◽  
Out Of Plane ◽  
Spectrally Resolved ◽  
Plane Mode

s-Tetrazine argon complexes T−Arn (n = 1, 2) are formed in a supersonic expansion of argon seeded with s-tetrazine. The expansion was conducted through a nozzle of 50 or 100 μm with an argon stagnation pressure between 1 and 1.5 bar. From spectrally resolved measurements it is clear that vibrational redistribution processes as well as vibrational predissociation processes take place after SVL excitation within the complex.From rise and decay time experiments it can be concluded, that after excitation of the 6a1 complex level, the above mentioned processes are consecutive and not parallel. It appears that the out of plane mode 16a couples with the Van der Waals stretching mode. The predissociation rate of the 16a2 complex is observed to be 2.3 × 109 s−1.

A New Design of Large Stroke Micro-Deformable Mirror Actuated by Electrostatic Repulsive Force

2008 ◽  
Author(s):  
Fangrong Hu ◽  
Jun Yao ◽  
Chuankai Qiu ◽  
Dajia Wang
Keyword(s):  
Electric Field ◽  
Resonant Frequency ◽  
Adaptive Optics ◽  
Bottom Electrode ◽  
Sacrificial Layer ◽  
Electrostatic Force ◽  
Repulsive Force ◽  
Deformable Mirror ◽  
Optical Aberrations ◽  
Out Of Plane

In this paper, a MEMS mirror actuated by an electrostatic repulsive force has been proposed and analyzed. The mirror consists of four U-shape springs, a fixed bottom electrode and a movable top electrode, there are many comb fingers on the edges of both electrodes. When the voltage is applied to the top and bottom electrodes, an asymmetric electric field is generated to the top movable fingers and springs, thus a net electrostatic force is produced to move the top plate out of plane. This designed micro-mirror is different from conventional MDM based on electrostatic-attractive-force, which is restricted by one-third thickness of the sacrificial layer for the pull-in phenomenon. The characteristic of this MDM has been analyzed, the result shows that the resonant frequency of the first mode is 8 kHz, and the stroke reaches 10μm at 200V, a MDM with large strokes can be realized for the application of adaptive optics in optical aberrations correction.

Vertical strain and electric field tunable electronic properties of type-II band alignment C2N/InSe van der Waals heterostructure

2019 ◽  
Vol 716 ◽  
pp. 155-161 ◽  
Author(s):  
Khang D. Pham ◽  
Nguyen N. Hieu ◽  
Le M. Bui ◽  
Huynh V. Phuc ◽  
Bui D. Hoi ◽  
...  
Keyword(s):  
Electric Field ◽  
Electronic Properties ◽  
Van Der Waals ◽  
Band Alignment ◽  
Type Ii ◽  
Vertical Strain ◽  
Van Der Waals Heterostructure
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