scholarly journals Molecular anchoring stabilizes low valence Ni(i)TPP on copper against thermally induced chemical changes

2020 ◽  
Vol 8 (26) ◽  
pp. 8876-8886
Author(s):  
Henning Maximilian Sturmeit ◽  
Iulia Cojocariu ◽  
Matteo Jugovac ◽  
Albano Cossaro ◽  
Alberto Verdini ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Charge Transfer ◽  
Copper Substrate ◽  
Surface Interaction ◽  
Chemical Changes ◽  
Thermally Induced ◽  
Thermal Stability Of ◽  
Molecule Surface

The strong molecule-surface interaction, followed by charge transfer at the interface, plays a fundamental role in the thermal stability of the layer by rigidly anchoring the porphyrin molecules to the copper substrate.

Dependence of Vickers Hardness on Annealing Temperature at Co/Cu Multilayered Films

2007 ◽  
Vol 561-565 ◽  
pp. 2399-2402
Author(s):  
Yoshihisa Kaneko ◽  
H. Sakakibara ◽  
Satoshi Hashimoto
Keyword(s):  
Thermal Stability ◽  
Vickers Hardness ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Copper Substrate ◽  
The Other ◽  
Multilayered Structures ◽  
Multilayered Films ◽  
Hardness Tests ◽  
Thermal Stability Of

Co/Cu and Ni/Cu multilayers fabricated by electroplating technique were annealed at various temperatures in order to investigate thermal stability of multilayered structures. Vickers hardness tests on the annealed Co/Cu and Ni/Cu multilayers were conducted at room temperature. It was recognized that after the annealing at 1023K the Co/Cu multilayer still maintained the hardness of as-deposited state. On the other hand, the hardness of Ni/Cu multilayer was almost identical to copper substrate after the annealing at 903K.

Thermal Stability of Structurally Controlled Lamellae and Hexagonal Mesoporous Silicate Thin Films

1999 ◽  
Vol 576 ◽  
Author(s):  
I. Honma ◽  
A. Endo ◽  
D. Kundu ◽  
H. S. Zhou
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Structural Changes ◽  
Liquid Interfaces ◽  
Thermally Induced ◽  
One Dimensional ◽  
Mesoporous Silicate ◽  
The Moment ◽  
Substrate Surfaces ◽  
Thermal Stability Of

ABSTRACTThin films of mesoporous materials have been synthesized recently as lamellar, one dimensional hexagonal and cubic structures at substrate surfaces as well as at air/liquid interfaces. The present work investigates thermally induced structural changes of lamellar and one-dimensional hexagonal(1-dH) mesostructured silicate thin films, which is less known at the moment. The 1-dH films proved to be much more thermally stable than the lamellar ones; Open-pore one dimensionalhexagonalmesoporous thin films are obtained by the calcination of the films, where as the lamellarphase has collapsed after the surfactants removal.

Thermal Stability of SiHn Configurations in Fz Silicon Single Crystals

1992 ◽  
Vol 262 ◽  
Author(s):  
Masami Kouketsu ◽  
Seiichi Isomae
Keyword(s):  
Thermal Stability ◽  
Single Crystals ◽  
Absorption Spectroscopy ◽  
Infrared Absorption ◽  
Structural Transformations ◽  
Infrared Absorption Spectroscopy ◽  
Thermally Induced ◽  
Silicon Lattice ◽  
Silicon Crystals ◽  
Thermal Stability Of

ABSTRACTThermal stability of SiHn (n=1∼4) configurations in FZ silicon crystals grown in Ar/H2 has been investigated by means of infrared absorption spectroscopy. Infrared absorption peaks at 2210, 2192, 2123 and 1946 cm−1, which are due to SiH4, SiH3, SiH2 and SiH units in silicon lattice, has been observed. It is found that the concentration of SiH4 and SiH increase with the decrease in SiH2 and SiH3 concentration at 500°C, and vice versa at 600°C. Annealing results suggest thermally induced structural transformations of SiHn configurations. We propose a model of the transformations through the cleavage of adjacent Si-H bonds to form a Si-Si bond and a H2 molecule, as well as the reaction of a H2 molecule with a Si-Si bond.

Boosting the photovoltaic thermal stability of fullerene bulk heterojunction solar cells through charge transfer interactions

2017 ◽  
Vol 5 (45) ◽  
pp. 23662-23670 ◽  
Author(s):  
Carr Hoi Yi Ho ◽  
Huanyang Cao ◽  
Yong Lu ◽  
Tsz-Ki Lau ◽  
Sin Hang Cheung ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Solar Cells ◽  
Charge Transfer ◽  
Active Layer ◽  
Organic Solar Cells ◽  
Bulk Heterojunction ◽  
Heterojunction Solar Cells ◽  
Bulk Heterojunction Solar Cells ◽  
Charge Transfer Interaction ◽  
Thermal Stability Of

Charge transfer interaction of a donor polymer with an appropriate 9-fluorenylidene malononitrile derivative in the active layer leads to profoundly enhanced thermal stability of fullerene-based bulk heterojunction organic solar cells.

The Ordered Phase Formation in Ti-Al-Ga Alloys

1970 ◽  
Vol 28 ◽  
pp. 440-441
Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Titanium Alloys ◽  
Growth Kinetics ◽  
Stoichiometric Composition ◽  
Good Potential ◽  
Alpha Titanium ◽  
Cold Rolled ◽  
Kinetics Of ◽  
Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

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