Iridium(iii) complex-containing non-conjugated polymers for non-volatile memory induced by switchable through-space charge transfer

2020 ◽  
Vol 8 (16) ◽  
pp. 5449-5455 ◽  
Author(s):  
Baojie Yang ◽  
Peng Tao ◽  
Chenxi Ma ◽  
Runze Tang ◽  
Tao Gong ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Conjugated Polymers ◽  
Space Charge ◽  
Non Volatile Memory ◽  
Volatile Memory

Non-conjugated polymers containing an iridium(iii) complex are rationally designed for non-volatile memory induced by switchable through-space charge transfer.

Unraveling the role of space-charge switch mechanism in hybrid non-volatile memory devices (Presentation Recording)

2015 ◽  
Author(s):  
Giovanni Ligorio ◽  
Marco Vittorio Nardi ◽  
Martin Brinkmann ◽  
Dieter Neher ◽  
Norbert Koch
Keyword(s):  
Space Charge ◽  
Memory Devices ◽  
Non Volatile Memory ◽  
Switch Mechanism ◽  
Volatile Memory

Space charge polarization-induced symmetrical negative resistive switching in individual p-type GeSe2:Bi superstructure nanobelts for non-volatile memory

2015 ◽  
Vol 3 (20) ◽  
pp. 5207-5213 ◽  
Author(s):  
Minghui Cao ◽  
Baochang Cheng ◽  
Li Xiao ◽  
Jie Zhao ◽  
Xiaohui Su ◽  
...  
Keyword(s):  
Space Charge ◽  
Resistive Switching ◽  
Polarization Effect ◽  
Space Charge Polarization ◽  
Resistive Switching Memory ◽  
Charge Polarization ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
P Type ◽  
Switching Memory

Two-terminal devices based on p-type GeSe2:Bi nanobelts show excellent symmetrical nonvolatile negative resistive switching memory behavior, originating from trap-induced space charge polarization effect.

Simulation of space charge limited organic non volatile memory elements

2012 ◽  
Vol 1430 ◽  
Author(s):  
Francesco Santoni ◽  
Alessio Gagliardi ◽  
Aldo Di Carlo
Keyword(s):  
Space Charge ◽  
Organic Material ◽  
Metallic Nanoparticles ◽  
Single Layer ◽  
Space Charge Layer ◽  
Charge Layer ◽  
Non Volatile Memory ◽  
Charged Nanoparticles ◽  
Volatile Memory ◽  
Internal Charge

ABSTRACTWe present a model for organic bistable devices (OBDs) embedded with metallic nanoparticles. In particular, two device architectures have been studied: a single layer device with metallic nanoparticles dispersed in a organic material matrix and a three layer device where two organic material regions are separated by a layer of heavy packed nanoparticles. The model describes the different behavior, the internal charge and potential distributions in the ON-OFF states. The OFF state is represented by charged nanoparticles forming a space charge layer which limits the current. The ON state occurs with neutral nanoparticles.

Conjugated polymers with cationic iridium(iii) complexes in the side-chain for flash memory devices utilizing switchable through-space charge transfer

2012 ◽  
Vol 22 (43) ◽  
pp. 22964 ◽  
Author(s):  
Shu-Juan Liu ◽  
Wen-Peng Lin ◽  
Ming-Dong Yi ◽  
Wen-Juan Xu ◽  
Chao Tang ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Conjugated Polymers ◽  
Space Charge ◽  
Flash Memory ◽  
Side Chain ◽  
Memory Devices

ECC-Based Bit-Write Reduction Code Generation for Non-Volatile Memory

2015 ◽  
Vol E98.A (12) ◽  
pp. 2494-2504 ◽  
Author(s):  
Masashi TAWADA ◽  
Shinji KIMURA ◽  
Masao YANAGISAWA ◽  
Nozomu TOGAWA
Keyword(s):  
Code Generation ◽  
Non Volatile Memory ◽  
Volatile Memory

Integrated low-temperature process for the fabrication of amorphous Si nanoparticles embedded in Al2 O3 for non-volatile memory application

2016 ◽  
Vol 213 (9) ◽  
pp. 2446-2451 ◽  
Author(s):  
Klemens Ilse ◽  
Thomas Schneider ◽  
Johannes Ziegler ◽  
Alexander Sprafke ◽  
Ralf B. Wehrspohn
Keyword(s):  
Low Temperature ◽  
Si Nanoparticles ◽  
Non Volatile Memory ◽  
Amorphous Si ◽  
Volatile Memory ◽  
Low Temperature Process

scholarly journals Secure Boot from Non-Volatile Memory for Programmable SoC Architectures

2020 ◽  
Author(s):  
Franz-Josef Streit ◽  
Florian Fritz ◽  
Andreas Becher ◽  
Stefan Wildermann ◽  
Stefan Werner ◽  
...  
Keyword(s):  
Non Volatile Memory ◽  
Volatile Memory

scholarly journals A Physical Unclonable Function Using a Configurable Tristate Hybrid Scheme With Non-Volatile Memory

2021 ◽  
Vol 2 ◽  
pp. 31-40
Author(s):  
Jiang Li ◽  
Yijun Cui ◽  
Chongyan Gu ◽  
Chenghua Wang ◽  
Weiqiang Liu ◽  
...  
Keyword(s):  
Physical Unclonable Function ◽  
Hybrid Scheme ◽  
Non Volatile Memory ◽  
Volatile Memory

Charge-Transfer Intermediates in the Electrochemical Doping Mechanism of Conjugated Polymers

2020 ◽  
Author(s):  
Ilaria Bargigia ◽  
Lisa R. Savagian ◽  
Anna M. Österholm ◽  
John R. Reynolds ◽  
Carlos Silva
Keyword(s):  
Charge Transfer ◽  
Conjugated Polymers ◽  
Electrochemical Doping ◽  
Doping Mechanism
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