High-Power Seawater Battery Working in Wide Temperature Range Enabled by Ultra-stable Prussian Blue Analogue Cathode

2021 ◽  
Author(s):  
Zhikai Le ◽  
Wenwu Li ◽  
Qi Dang ◽  
Chengbin Jing ◽  
Wei Zhang ◽  
...  
Keyword(s):  
Prussian Blue ◽  
Power Density ◽  
Output Power ◽  
High Power ◽  
Wide Temperature Range ◽  
Prussian Blue Analogue ◽  
Technology Industry ◽  
Marine Technology ◽  
Seawater Battery

Seawater batteries have been widely used for marine technology industry. However, elevating the output power density of the seawater batteries to meet long term and repeated underwater usage in a...

Recent Trends in Template Assisted 3D Porous Materials for Electrochemical Supercapacitors

2021 ◽  
Author(s):  
Nilimapriyadarsini Swain ◽  
Saravanakumar Balasubramaniam ◽  
Manab Kundu ◽  
Lukas Schmidt-Mende ◽  
Ananthakumar Ramadoss
Keyword(s):  
Energy Storage ◽  
Porous Materials ◽  
Power Density ◽  
High Power ◽  
High Power Density ◽  
Electrochemical Supercapacitors ◽  
Energy Storage Devices ◽  
Storage Devices ◽  
Recent Trends

Supercapacitors have emerged as an outstanding candidate among numerous energy storage devices because of their long-term cycle life, high power density, and minimal safety concerns. As we know, the lower...

scholarly journals Design of W-Band GaN-on-Silicon Power Amplifier Using Low Impedance Lines

2021 ◽  
Vol 11 (19) ◽  
pp. 9017
Author(s):  
Jinho Jeong ◽  
Yeongmin Jang ◽  
Jongyoun Kim ◽  
Sosu Kim ◽  
Wansik Kim
Keyword(s):  
Power Density ◽  
Output Power ◽  
Power Amplifier ◽  
High Power ◽  
Common Source ◽  
High Electron ◽  
Large Signal ◽  
Power Added Efficiency ◽  
W Band ◽  
Gan On Si

In this paper, a high-power amplifier integrated circuit (IC) in gallium-nitride (GaN) on silicon (Si) technology is presented at a W-band (75–110 GHz). In order to mitigate the losses caused by relatively high loss tangent of Si substrate compared to silicon carbide (SiC), low-impedance microstrip lines (20–30 Ω) are adopted in the impedance matching networks. They allow for the impedance transformation between 50 Ω and very low impedances of the wide-gate transistors used for high power generation. Each stage is matched to produce enough power to drive the next stage. A Lange coupler is employed to combine two three-stage common source amplifiers, providing high output power and good input/output return loss. The designed power amplifier IC was fabricated in the commercially available 60 nm GaN-on-Si high electron mobility transistor (HEMT) foundry. From on-wafer probe measurements, it exhibits the output power higher than 26.5 dBm and power added efficiency (PAE) higher than 8.5% from 88 to 93 GHz with a large-signal gain > 10.5 dB. Peak output power is measured to be 28.9 dBm with a PAE of 13.3% and a gain of 9.9 dB at 90 GHz, which corresponds to the power density of 1.94 W/mm. To the best of the authors’ knowledge, this result belongs to the highest output power and power density among the reported power amplifier ICs in GaN-on-Si HEMT technologies operating at the W-band.

Cubic MnS–FeS2 Composites Derived from a Prussian Blue Analogue as Anode Materials for Sodium-Ion Batteries with Long-Term Cycle Stability

2020 ◽  
Vol 12 (39) ◽  
pp. 43624-43633
Author(s):  
Qian Liu ◽  
Shao-Jian Zhang ◽  
Cheng-Cheng Xiang ◽  
Chen-Xu Luo ◽  
Peng-Fang Zhang ◽  
...  
Keyword(s):  
Prussian Blue ◽  
Anode Materials ◽  
Sodium Ion ◽  
Sodium Ion Batteries ◽  
Cycle Stability ◽  
Prussian Blue Analogue

scholarly journals Achieving high power factor and output power density in p-type half-Heuslers Nb1-xTixFeSb

2016 ◽  
Vol 113 (48) ◽  
pp. 13576-13581 ◽  
Author(s):  
Ran He ◽  
Daniel Kraemer ◽  
Jun Mao ◽  
Lingping Zeng ◽  
Qing Jie ◽  
...  
Keyword(s):  
Power Density ◽  
Output Power ◽  
Power Factor ◽  
High Power ◽  
Peak Power ◽  
Large Scale ◽  
The Past ◽  
High Power Factor ◽  
P Type ◽  
High Output

Improvements in thermoelectric material performance over the past two decades have largely been based on decreasing the phonon thermal conductivity. Enhancing the power factor has been less successful in comparison. In this work, a peak power factor of ∼106 μW⋅cm−1⋅K−2is achieved by increasing the hot pressing temperature up to 1,373 K in the p-type half-Heusler Nb0.95Ti0.05FeSb. The high power factor subsequently yields a record output power density of ∼22 W⋅cm−2based on a single-leg device operating at between 293 K and 868 K. Such a high-output power density can be beneficial for large-scale power generation applications.

Flexible supercapacitors with high capacitance retention at temperatures from -20 to 100 oC based on DMSO-doping polymer hydrogel electrolytes

2021 ◽  
Author(s):  
Ya-Nan Liu ◽  
Huili Li ◽  
Xue Wang ◽  
Tian Lv ◽  
Keyi Dong ◽  
...  
Keyword(s):  
Energy Storage ◽  
Power Density ◽  
High Power ◽  
High Power Density ◽  
Energy Storage Devices ◽  
High Capacitance ◽  
Storage Devices ◽  
Flexible Supercapacitors ◽  
Cycling Life

Flexible supercapacitors have attracted increasing interests due to their high power density, long-term cycling life and excellent safety. Liking other energy storage devices, flexible supercapacitors show serious performance degradation as...

STABLE HIGH POWER GaN-ON-GaN HEMT

2004 ◽  
Vol 14 (03) ◽  
pp. 738-744 ◽  
Author(s):  
K. K. CHU ◽  
P. C. CHAO ◽  
J. A. WINDYKA
Keyword(s):  
Power Density ◽  
Output Power ◽  
High Power ◽  
High Performance ◽  
Ambient Conditions ◽  
Free Standing ◽  
Gain Compression ◽  
Power Added Efficiency ◽  
Gan Hemt ◽  
Drain Bias

High power AlGaN/GaN HEMTs on free-standing GaN substrates with excellent stability have been demonstrated for the first time. When operated at a drain bias of 50V, devices without a field plate showed a record CW output power density of 10.0W/mm at 10GHz with an associated power-added efficiency of 45%. The efficiency reaches a maximum of 58% with an output power density of 5.5W/mm under a drain bias of 25V at 10GHz. Long-term stability of device RF operation was also examined. Under ambient conditions, devices biased at 25V and driven at 3dB gain compression remained stable at least up to 1,000 hours, degrading only by 0.35dB in output power. Such results clearly demonstrate the feasibility of GaN - on - GaN HEMT as an alternative device technology to the GaN - on - SiC HEMT in supporting reliable, high performance microwave power applications.

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