scholarly journals Chemical vapor deposited polymer layer for efficient passivation of planar perovskite solar cells

2020 ◽  
Vol 8 (38) ◽  
pp. 20122-20132
Author(s):  
Mahdi Malekshahi Byranvand ◽  
Farid Behboodi-Sadabad ◽  
Abed Alrhman Eliwi ◽  
Vanessa Trouillet ◽  
Alexander Welle ◽  
...  

Controlling the thickness and homogeneity of thin passivation layers on polycrystalline perovskite thin films is challenging. We report CVD polymerization of poly(p-xylylene) layers at controlled substrate temperatures for efficient surface passivation of perovskite films.

MRS Advances ◽  
2018 ◽  
Vol 3 (51) ◽  
pp. 3069-3074 ◽  
Author(s):  
Dominik Stümmler ◽  
Simon Sanders ◽  
Pascal Pfeiffer ◽  
Noah Wickel ◽  
Gintautas Simkus ◽  
...  

ABSTRACTAlthough Pb-based perovskite solar cells already achieve power conversion efficiencies (PCE) beyond 20 %, the use of toxic Pb is causing considerable environmental concern. As a consequence, a variety of alternative cations have been investigated to replace Pb2+ in the perovskite structure. Methylammonium bismuth iodide (MA3Bi2I9, MBI) has shown promising results for environmentally benign and chemically stable devices. While the PCE of MBI-based solar cells are still comparably low, structural improvements have been made by using chemical vapor deposition (CVD). CVD allows for the well-controlled formation of coherent and dense MBI layers in contrast to solution-processing. In this work, CVD as a possible MBI fabrication method for efficient and size-scalable solar cells is discussed. The precursors MA iodide (MAI) and Bi iodide (BiI3) are deposited in an alternating deposition process forming the desired MBI perovskite on the heated substrate. Substrate temperatures as well as deposition times of each precursor are varied with the aim of forming coherent and dense MBI layers. Optimized films are further processed to solar cell prototypes and compared with solution-processed reference devices. The results reveal that CVD possesses great potential to enable the manufacture of MBI photovoltaic (PV) devices processed in a solvent-free environment.


2013 ◽  
Vol 724-725 ◽  
pp. 151-155
Author(s):  
Peng Wang ◽  
Xian Fang Gou ◽  
Wei Tao Fan ◽  
Chen Cai Sun

In order to improving the conversion efficiency of polycrystalline silicon solar cells, progressive SiNx thin films were deposited on the surface via Roth&Rau plasma-enhanced chemical vapor deposition method. The effects of progressive SiNx thin films, such as surface passivation, anti-reflection, and electrical performance were systematically investigated. Compared with monolayer films, progressive SiNx thin films have better anti-reflective properties in the wavelength range of 300-500 nm, resulting in improvement of the short wavelength absorption of the crystalline silicon solar cells. Moreover, the bottom of progressive SiNx thin films with high refractive index enhances the surface passivation. Thus, higher open-circuit voltage and fill factor could be obtained by this technique.


2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Vidur Raj ◽  
Dipankar Chugh ◽  
Lachlan E. Black ◽  
M. M. Shehata ◽  
Li Li ◽  
...  

AbstractSurface passivation is crucial for many high-performance solid-state devices, especially solar cells. It has been proposed that 2D hexagonal boron nitride (hBN) films can provide near-ideal passivation due to their wide bandgap, lack of dangling bonds, high dielectric constant, and easy transferability to a range of substrates without disturbing their bulk properties. However, so far, the passivation of hBN has been studied for small areas, mainly because of its small sizes. Here, we report the passivation characteristics of wafer-scale, few monolayers thick, hBN grown by metalorganic chemical vapor deposition. Using a recently reported ITO/i-InP/p+-InP solar cell structure, we show a significant improvement in solar cell performance utilizing a few monolayers of hBN as the passivation layer. Interface defect density (at the hBN/i-InP) calculated using C–V measurement was 2 × 1012 eV−1cm−2 and was found comparable to several previously reported passivation layers. Thus, hBN may, in the future, be a possible candidate to achieve high-quality passivation. hBN-based passivation layers can mainly be useful in cases where the growth of lattice-matched passivation layers is complicated, as in the case of thin-film vapor–liquid–solid and close-spaced vapor transport-based III–V semiconductor growth techniques.


Small ◽  
2020 ◽  
Vol 16 (49) ◽  
pp. 2005022 ◽  
Author(s):  
Md Arafat Mahmud ◽  
The Duong ◽  
Yanting Yin ◽  
Jun Peng ◽  
Yiliang Wu ◽  
...  

Nanoscale ◽  
2019 ◽  
Vol 11 (45) ◽  
pp. 21824-21833 ◽  
Author(s):  
Jyoti V. Patil ◽  
Sawanta S. Mali ◽  
Chang Kook Hong

Controlling the grain size of the organic–inorganic perovskite thin films using thiourea additives now crossing 2 μm size with >20% power conversion efficiency.


2019 ◽  
Vol 10 (2) ◽  
pp. 485-497 ◽  
Author(s):  
Muhammad Jawad ◽  
Abdul Faheem Khan ◽  
Amir Waseem ◽  
Afzal Hussain Kamboh ◽  
Muhammad Mohsin ◽  
...  

2019 ◽  
Vol 9 (25) ◽  
pp. 1900896 ◽  
Author(s):  
Hongrui Sun ◽  
Jing Zhang ◽  
Xinlei Gan ◽  
Luting Yu ◽  
Haobo Yuan ◽  
...  

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