Improvement of electrodeposited Sb2Se3 thin film photoelectroactivity by cobalt grain boundary modification

2020 ◽  
Vol 8 (27) ◽  
pp. 13742-13753 ◽  
Author(s):  
Magno Barcelos Costa ◽  
Francisco W. S. Lucas ◽  
Lucia Helena Mascaro
Keyword(s):  
Thin Film ◽  
Grain Boundary ◽  
Photoelectrochemical Properties ◽  
Boundary Modification

Cobalt-modified Sb2Se3 showed improved photoelectrochemical properties towards the HER and initial photocorrosion stability, which were associated with grain-boundary inversion.

On the role of tin underlays for the prevention of thermal grooving in thin gold films

1986 ◽  
Vol 44 ◽  
pp. 732-733
Author(s):  
Jin Young Kim ◽  
R. E. Hummel ◽  
R. T. DeHoff
Keyword(s):  
Thin Film ◽  
Free Surface ◽  
Grain Boundary ◽  
Beneficial Effect ◽  
Failure Mechanism ◽  
Failure Mechanisms ◽  
Distinct Advantage ◽  
Gold Films ◽  
Gold Thin Film

Gold thin film metallizations in microelectronic circuits have a distinct advantage over those consisting of aluminum because they are less susceptible to electromigration. When electromigration is no longer the principal failure mechanism, other failure mechanisms caused by d.c. stressing might become important. In gold thin-film metallizations, grain boundary grooving is the principal failure mechanism.Previous studies have shown that grain boundary grooving in gold films can be prevented by an indium underlay between the substrate and gold. The beneficial effect of the In/Au composite film is mainly due to roughening of the surface of the gold films, redistribution of indium on the gold films and formation of In2O3 on the free surface and along the grain boundaries of the gold films during air annealing.

Spatially resolved investigation of the defect states in methylammonium lead iodide perovskite bicrystals

2019 ◽  
Vol 7 (42) ◽  
pp. 13156-13160 ◽  
Author(s):  
Svetlana Sirotinskaya ◽  
Christian Fettkenhauer ◽  
Daichi Okada ◽  
Yohei Yamamoto ◽  
Doru C. Lupascu ◽  
...  
Keyword(s):  
Thin Film ◽  
Grain Boundary ◽  
System Approach ◽  
Defect States ◽  
Lead Iodide ◽  
Modal System ◽  
Trap Formation ◽  
Spatially Resolved ◽  
Methylammonium Lead Iodide

Introducing a modal system approach for the analytical perovskite thin-film trap physics evaluation. Our study confirms existing models for trap formation in MAPI, substantiating different defect states in the grain boundary and bulk regions.

Grain Boundary Characterisation in Sequentially Laterally Solidified Polycrystalline-Silicon Thin Film Transistors

2019 ◽  
Vol 8 (1) ◽  
pp. 211-216
Author(s):  
Antonio Valletta ◽  
Alessandra Bonfiglietti ◽  
Matteo Rapisarda ◽  
Alessandro Pecora ◽  
Luigi Mariucci ◽  
...  
Keyword(s):  
Thin Film ◽  
Grain Boundary ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Silicon Thin Film

scholarly journals Effects of Growth Temperature on the Physicochemical and Photoelectrochemical Properties of a Modified Chemical Bath Deposited Fe2O3 Photoelectrode

2020 ◽  
Vol 58 (4) ◽  
pp. 263-271
Author(s):  
Yaejin Hong ◽  
Seung-Hwan Jeon ◽  
Hyukhyun Ryu ◽  
Won-Jae Lee
Keyword(s):  
Thin Film ◽  
Film Thickness ◽  
Growth Temperature ◽  
Electrochemical Impedance ◽  
Ph Value ◽  
Saturated Calomel Electrode ◽  
Precursor Solution ◽  
Photocurrent Density ◽  
Flat Band ◽  
Photoelectrochemical Properties

In this study, Fe2O3 photoelectrode thin films were grown on fluorine-doped tin oxide substrates at various temperatures ranging from 145 to 220 oC using modified chemical bath deposition. The morphological, structural, electrical, and photoelectrochemical properties of the resulting Fe2O3 photoelectrode were analyzed using field emission scanning electron microscopy, X-ray diffraction, electrochemical impedance spectroscopy, and a three-electrode potentiostat/galvanostat, respectively. Growth temperature and hydrochloric acid etching both affected the growth of the Fe2O3 photoelectrode, with Fe2O3 thin film thickness first increasing and then decreasing as growth temperature increased. The pH value of the precursor solution varied according to growth temperature, which in turn affected film thickness. The highest photocurrent density (0.53 mA/cm2 at 0.5 V vs. saturated calomel electrode) was obtained from the Fe2O3 photoelectrode grown at 190 oC, which yielded the thickest thin film, smallest full width at half maximum and largest grain size for the (104) and (110) plane, and highest flat-band potential value. Based on these findings, the photoelectrochemical properties of Fe2O3 photoelectrodes grown at various temperatures are strongly affected by their morphological, structural, and electrical properties.

scholarly journals Effect of HF Treatment on the Photoelectrochemical Properties of a Hematite Thin Film Photoanode for Water Splitting

2014 ◽  
Vol 30 (6) ◽  
pp. 1099-1106 ◽  
Author(s):  
HU Yu-Xiang ◽  
◽  
JIANG Chun-Xiang ◽  
FANG Liang ◽  
ZHENG Fen-Gang ◽  
...  
Keyword(s):  
Thin Film ◽  
Water Splitting ◽  
Photoelectrochemical Properties
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