scholarly journals Prospects for defect engineering in Cu2ZnSnS4 solar absorber films

2020 ◽  
Vol 8 (31) ◽  
pp. 15864-15874
Author(s):  
Katharina Rudisch ◽  
Alexandra Davydova ◽  
Lars Riekehr ◽  
Joakim Adolfsson ◽  
Luciano Quaglia Casal ◽  
...  
Keyword(s):  
Thin Films ◽  
Material Properties ◽  
Process Conditions ◽  
Defect Engineering ◽  
Solar Absorber ◽  
New Approaches

Composition spread Cu2ZnSnS4 thin films unveil the complicated interplay between process conditions and material properties, pointing to new approaches towards defect engineering.

scholarly journals Influence of the Substrate, Process Conditions, and Postannealing Temperature on the Properties of ZnO Thin Films Grown by the Successive Ionic Layer Adsorption and Reaction Method

ACS Omega ◽  
2021 ◽  
Vol 6 (4) ◽  
pp. 2665-2674
Author(s):  
Bijoy Chandra Ghos ◽  
Syed Farid Uddin Farhad ◽  
Md Abdul Majed Patwary ◽  
Shanta Majumder ◽  
Md. Alauddin Hossain ◽  
...  
Keyword(s):  
Thin Films ◽  
Zno Thin Films ◽  
Process Conditions ◽  
Reaction Method ◽  
Layer Adsorption ◽  
Ionic Layer

Evaluation of Sub-Gap States in Amorphous In-Ga-Zn-O Thin Films Treated with Various Process Conditions

2014 ◽  
Vol 1633 ◽  
pp. 55-60 ◽  
Author(s):  
Kazushi Hayashi ◽  
Aya Hino ◽  
Hiroaki Tao ◽  
Yasuyuki Takanashi ◽  
Shinya Morita ◽  
...  
Keyword(s):  
Thin Films ◽  
Peak Position ◽  
Process Conditions ◽  
Charge Densities ◽  
Capacitance Voltage ◽  
Time Regime ◽  
Order Of Magnitude ◽  
Transient Spectroscopy ◽  
Gap States ◽  
Capacitance Transient

ABSTRACTIn the present study, the sub-gap states of amorphous In-Ga-Zn-O (a-IGZO) thin films treated with various process conditions have been evaluated by means of capacitance-voltage (C-V) characteristics and isothermal capacitance transient spectroscopy (ICTS). It was found that the space-charge densities of the a-IGZO decreased as the oxygen partial pressure was increased during the sputtering of a-IGZO thin films. The ICTS spectra for the 4, 8, and 12 % samples were similar and the peak positions were found to be around 1 × 10-2 s at 180 K. On the other hand, the peak position for the 20 % sample shifted to a longer time regime and was located at around 2 × 10-1 s at 180 K. The total densities of the traps for the 4, 8, and 12 % samples were calculated to be 5−6 × 1016 cm-3, while that for 20 % was one order of magnitude lower than the others. From Thermal desorption spectrometer, it was found that desorption of Zn atoms started at a temperature higher than 300 °C for the 4 % sample, while desorption of Zn was not observed for the 20 % sample. The introduction of the sub-gap states could be attributed to oxygen-rich and/or Zn-deficient defects in the a-IGZO thin films formed during thermal annealing.

Size- and temperature-dependent Young's modulus and size-dependent thermal expansion coefficient of thin films

2016 ◽  
Vol 18 (31) ◽  
pp. 21508-21517 ◽  
Author(s):  
Xiao-Ye Zhou ◽  
Bao-Ling Huang ◽  
Tong-Yi Zhang
Keyword(s):  
Thin Films ◽  
Thermal Expansion ◽  
Young’S Modulus ◽  
Thermal Expansion Coefficient ◽  
Expansion Coefficient ◽  
Material Properties ◽  
Essential Role ◽  
Young's Modulus ◽  
Temperature Dependent ◽  
Size Dependent

Surfaces of nanomaterials play an essential role in size-dependent material properties.

Contact stiffness depth-sensing indentation: Understanding of material properties of thin films attached to substrates

2017 ◽  
Vol 114 ◽  
pp. 172-179 ◽  
Author(s):  
Ivan I. Argatov ◽  
Feodor M. Borodich ◽  
Svetlana A. Epshtein ◽  
Elena L. Kossovich
Keyword(s):  
Thin Films ◽  
Material Properties ◽  
Contact Stiffness ◽  
Depth Sensing

scholarly journals Pulsed Laser-Induced Effects in the Material Properties of Tungsten Thin Films

2007 ◽  
Vol 59 ◽  
pp. 436-439
Author(s):  
R Evans ◽  
S Camacho-López ◽  
M A Camacho-López ◽  
C Sánchez-Pérez ◽  
A Esparza-García
Keyword(s):  
Thin Films ◽  
Material Properties ◽  
Pulsed Laser

Stress Effects in Drying Polymer Films

1994 ◽  
Vol 356 ◽  
Author(s):  
S. Y. Tam ◽  
L. E. Scriven ◽  
H. K. Stolarski
Keyword(s):  
Thin Films ◽  
Mass Transfer ◽  
Diffusion Coefficient ◽  
Polymer Films ◽  
Material Properties ◽  
Film Surface ◽  
Viscoplastic Material ◽  
Stress Effects ◽  
Diffusion And Convection ◽  
Extra Stress

AbstractA model is developed to predict the magnitude and pattern of stress due to drying of polymer films. This model combines diffusion-and-convection equation with large deformation elasto-viscoplasticity, utilizing concentration dependent elastic and viscoplastic material properties to better represent the behavior of drying thin films.The results show that the highest stress occurs at film surface where the concentration depletion is the highest. The magnitude of this stress is induced by increasing mass transfer across the film surface but reduced by increasing diffusion coefficient. The edge effect is significant but local, limited to about four film thicknesses. Similarly, change in substrate induces extra stress.

Tailoring Material Properties through Defect Engineering

2010 ◽  
Vol 39 (12) ◽  
pp. 1226-1231 ◽  
Author(s):  
Harry L. Tuller ◽  
Sean R. Bishop
Keyword(s):  
Material Properties ◽  
Defect Engineering

scholarly journals Impact of process conditions on chemical solution deposited BNKT thin film electromechanical properties

2021 ◽  
Vol 3 (10) ◽  
Author(s):  
Kyle M. Grove ◽  
Austin Fox ◽  
David P. Cann ◽  
Song Won Ko ◽  
Peter Mardilovich ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Dielectric Loss ◽  
Pyrolysis Temperature ◽  
Piezoelectric Response ◽  
Excess Properties ◽  
Process Conditions ◽  
Chemical Solution ◽  
Ramp Rate

Abstract Phase pure perovskite (1-x)Bi1/2Na1/2TiO3 – xBi1/2K1/2TiO3 (BNKT) thin films were successfully prepared via an inverse mixing order chemical solution deposition method and the impact of process conditions on film properties were observed. Process conditions evaluated included crystallization temperature and time, ramp rate, pyrolysis temperature, and cation excess. Properties measured included crystal structure, dielectric constant, dielectric loss, piezoelectric response, and ferroelectric response. A few notable trends were observed. A subtle impact on piezoelectric response was observed in films prepared using different ramp rates: 100 C per second films (d33,f = 60 ± 5 pm/V at 1 kHz), 75 °C per second films (d33,f = 55 ± 5 pm/V) and 150 C per second films (d33,f = 50 ± 5 pm/V). Films prepared using a 75 °C per second ramp rate displayed slightly higher dielectric loss (tan δ = 0.09 at 1 kHz) than films prepared using a 100 °C per second ramp rate (tan δ = 0.07 at 1 kHz) or 150 °C per second ramp rate (tan δ = 0.05 at 1 kHz). Pyrolysis temperatures greater than 350 °C are necessary to burn off organics and maximize film dielectric constant. Dielectric constant increased from 450 ± 50 at 1 kHz to 600 ± 50 at 1 kHz by increasing pyrolysis temperature from 300 to 400 °C. Excess cation amounts (for compositional control) were also evaluated and it was found films with higher amounts of Na and K excess compared to bismuth excess displayed an increase in d33,f of about 10 pm/V compared to films prepared with equivalent Bi and Na and K excess amounts. Article highlights Impact of processing conditions on inverse mixing order chemical solution deposited bismuth based thin films. Dielectric, piezoelectric, and ferroelectric properties of thin film bismuth sodium titanate-bismuth potassium titanate thin films. Developing lead-free piezoelectric actuator materials.

A Study on the Effect of Process Parameters on Surface Topography of Al Thin Films on Various Substrates Using AFM

2011 ◽  
Vol 383-390 ◽  
pp. 903-908
Author(s):  
S. Shanmugan ◽  
D. Mutharasu ◽  
Z. Hassan ◽  
H. Abu. Hassan
Keyword(s):  
Thin Films ◽  
Surface Topography ◽  
Flow Rate ◽  
Gas Flow ◽  
Process Conditions ◽  
Gas Flow Rate ◽  
Glass Substrates ◽  
Sputtering Power ◽  
Large Particles ◽  
Ar Gas

Al thin films were prepared over different substrates at various process conditions using DC sputtering. The surface topography of all prepared films was examined using AFM technique. Very smooth, uniform and dense surface were observed for Al films coated over Glass substrates. The observed particle size was nano scale (20 -70 nm) for Glass substrates. Sputtering power showed immense effect on surface roughness with respective to Ar gas flow rate. Noticeable change on surface with large particles was observed in Copper substrates at various sputtering power and gas flow rate.

scholarly journals Effect of Etchant Concentration on the Optical Properties and Surface Topography of MoO3 Selective Solar Absorber Thin Films - CORRIGENDUM

MRS Advances ◽  
2020 ◽  
Vol 5 (43) ◽  
pp. 2249-2249
Author(s):  
R. Akoba ◽  
G. G. Welegergs ◽  
M. Luleka ◽  
J Sackey ◽  
N Nauman ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Surface Topography ◽  
Solar Absorber
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