Work function and band alignment of few-layer violet phosphorene

2020 ◽  
Vol 8 (17) ◽  
pp. 8586-8592 ◽  
Author(s):  
Bo Zhang ◽  
Zhenyu Wang ◽  
Hongyang Huang ◽  
Lihui Zhang ◽  
Mengyue Gu ◽  
...  
Keyword(s):  
Work Function ◽  
Structure Design ◽  
Band Alignment ◽  
Heterojunction Structure

The work function and band alignment of violet phosphorene are demonstrated, giving a practical route for heterojunction structure design.

scholarly journals Band alignment in molecular devices: Influence of anchoring group and metal work function

2008 ◽  
Vol 77 (24) ◽  
Author(s):  
Jian-guo Wang ◽  
Emil Prodan ◽  
Roberto Car ◽  
Annabella Selloni
Keyword(s):  
Work Function ◽  
Band Alignment ◽  
Molecular Devices ◽  
Metal Work Function ◽  
Anchoring Group ◽  
Metal Work

scholarly journals Layer-dependent Band Alignment and Work Function of Few-Layer Phosphorene

2014 ◽  
Vol 4 (1) ◽  
Author(s):  
Yongqing Cai ◽  
Gang Zhang ◽  
Yong-Wei Zhang
Keyword(s):  
Work Function ◽  
Band Alignment

scholarly journals Work function investigations of Al-doped ZnO for band-alignment in electronic and optoelectronic applications

2019 ◽  
Vol 484 ◽  
pp. 990-998 ◽  
Author(s):  
Grant Drewelow ◽  
Austin Reed ◽  
Chandon Stone ◽  
Kwangdong Roh ◽  
Zhong-Tao Jiang ◽  
...  
Keyword(s):  
Work Function ◽  
Band Alignment ◽  
Doped Zno ◽  
Optoelectronic Applications

scholarly journals Two Dimensional β-InSe with Layer-Dependent Properties: Band Alignment, Work Function and Optical Properties

Nanomaterials ◽  
2019 ◽  
Vol 9 (1) ◽  
pp. 82 ◽  
Author(s):  
David K. Sang ◽  
Huide Wang ◽  
Meng Qiu ◽  
Rui Cao ◽  
Zhinan Guo ◽  
...  
Keyword(s):  
Optical Properties ◽  
Work Function ◽  
High Performance ◽  
Density Functional ◽  
Electronic Band Structure ◽  
Strong Dependence ◽  
Band Alignment ◽  
Thickness Variation ◽  
Two Dimensional ◽  
Electronic Band

Density functional theory calculations of the layer (L)-dependent electronic band structure, work function and optical properties of β-InSe have been reported. Owing to the quantum size effects (QSEs) in β-InSe, the band structures exhibit direct-to-indirect transitions from bulk β-InSe to few-layer β-InSe. The work functions decrease monotonically from 5.22 eV (1 L) to 5.0 eV (6 L) and then remain constant at 4.99 eV for 7 L and 8 L and drop down to 4.77 eV (bulk β-InSe). For optical properties, the imaginary part of the dielectric function has a strong dependence on the thickness variation. Layer control in two-dimensional layered materials provides an effective strategy to modulate the layer-dependent properties which have potential applications in the next-generation high performance electronic and optoelectronic devices.

Role of Surfaces and Interfaces for the Electronic Properties of Conducting Oxides

2001 ◽  
Vol 666 ◽  
Author(s):  
Andreas Klein
Keyword(s):  
Work Function ◽  
Electronic Properties ◽  
Photoelectron Spectroscopy ◽  
Band Alignment ◽  
Surface Band ◽  
Band Bending ◽  
Conducting Oxides ◽  
Degenerate Semiconductors ◽  
Surfaces And Interfaces

ABSTRACTTransparent conductive oxides (TCOs) are generally considered as degenerate semiconductors doped intrinsically by oxygen vacancies and by intentionally added dopants. For some applications a high work function is required in addition to high conductivity and it is desired to tune both properties independently. To increase the work function, the distance between the Fermi energy and the vacuum level must increase, which can be realized either by electronic surface dipoles or by space charge layers. Photoelectron spectroscopy data of in-situ prepared samples clearly show that highly doped TCOs can show surface band bending of the order of 1 eV. It is further shown that the band alignment at heterointerfaces between TCOs and other materials, which are crucial for many devices, are also affected by such band bending. The origin of the band bending, which seems to be general to all TCOs, depends on TCO thin film and surface processing conditions. The implication of surface band bending on the electronic properties of thin films and interfaces are discussed.

scholarly journals Transparent Conducting Oxides for Photovoltaics: Manipulation of Fermi Level, Work Function and Energy Band Alignment

Materials ◽  
2010 ◽  
Vol 3 (11) ◽  
pp. 4892-4914 ◽  
Author(s):  
Andreas Klein ◽  
Christoph Körber ◽  
André Wachau ◽  
Frank Säuberlich ◽  
Yvonne Gassenbauer ◽  
...  
Keyword(s):  
Fermi Level ◽  
Work Function ◽  
Energy Band ◽  
Transparent Conducting Oxides ◽  
Band Alignment ◽  
Conducting Oxides ◽  
Transparent Conducting

Crystal structure design and multiband physical properties of quaternary sulfide Ba5Bi2Co2S10 for optoelectronic conversion

2019 ◽  
Vol 55 (33) ◽  
pp. 4809-4812 ◽  
Author(s):  
Kejun Bu ◽  
Xian Zhang ◽  
Jian Huang ◽  
Mengjia Luo ◽  
Chong Zheng ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Physical Properties ◽  
Structure Design ◽  
Band Alignment

Band alignment of hypothetical Bi–MT–S compounds with MT in Oh and Td symmetry, respectively. Crystal structure of Ba5Bi2Co2S10 viewed down the a-axis and multiband properties with optimal bandgap of Ba5Bi2Co2S10.

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