scholarly journals Toward on-board microchip synthesis of CdSe vs. PbSe nanocrystalline quantum dots as a spectral decoy for protecting space assets

2021 ◽  
Author(s):  
Job Nijhuis ◽  
Quy Don Tran ◽  
Nam Nghiep Tran ◽  
Toan Dinh ◽  
Hoang-Phuong Phan ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Silicon Carbide ◽  
Surface Morphology ◽  
Reaction Chamber ◽  
Glass Wafer ◽  
Schematic Sketch ◽  
Sic Film

Fabrication of the reaction chamber using silicon carbide. (A) A schematic sketch of the fabrication flow; (B) a photograph of a transparent 6 inch SiC-on-glass wafer; (C) the surface morphology of the SiC film.

Surface morphology of AlN and size dispersion of GaN quantum dots

2005 ◽  
Vol 274 (3-4) ◽  
pp. 387-393 ◽  
Author(s):  
Akihiro Matsuse ◽  
Nicolas Grandjean ◽  
Benjamin Damilano ◽  
Jean Massies
Keyword(s):  
Quantum Dots ◽  
Surface Morphology ◽  
Size Dispersion

scholarly journals Fabrication of Silicon Carbide Quantum Dots via Chemical-Etching Approach and Fluorescent Imaging for Living Cells

2014 ◽  
Vol 05 (04) ◽  
pp. 177-182
Author(s):  
Yuepeng Song ◽  
Dongsheng Gao ◽  
Hyoung Seop Kim ◽  
Cuiqin Qu ◽  
Jie Kang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Silicon Carbide ◽  
Chemical Etching ◽  
Living Cells ◽  
Fluorescent Imaging

Analysis of the Use of Reflectors and Reflective Surfaces for Increasing the Light Efficiency of LEDs Based on AlGaInP Heterostructures

2019 ◽  
Vol 942 ◽  
pp. 77-86
Author(s):  
Alexander Gradoboev ◽  
Ksenia Orlova ◽  
Anastasiya V. Simonova
Keyword(s):  
Quantum Dots ◽  
Silicon Carbide ◽  
Quantum Wells ◽  
Gallium Phosphide ◽  
Bragg Reflectors ◽  
Technological Solution ◽  
Emission Power ◽  
Base Substrate ◽  
Light Efficiency ◽  
Reflective Surfaces

The most common technological solution for increasing the light efficiency of the LEDs based upon AlGaInP heterostructures are discussed in the paper. The creation of LEDs with the inclusion of quantum wells and quantum dots in the active region, removing the original base and placing the LED on a new substrate, the replacement of the absorbent substrate by the reflective, using light-reflective surfaces such as Bragg reflectors or a mirror base (substrate), the list of new based materials for the LEDs based upon AlGaInP heterostructures as same as sapphire, glass, gallium phosphide, silicon and silicon carbide are presented. Therefore, new advanced methods of emission power are emerging.

Influence of Ga(Al)As substrates on surface morphology and critical thickness of InGaAs quantum dots

2019 ◽  
Vol 19 (5) ◽  
pp. 557-562
Author(s):  
Yi Wang ◽  
Xiang Guo ◽  
Jiemin Wei ◽  
Chen Yang ◽  
Zijiang Luo ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Surface Morphology ◽  
Critical Thickness

Influence of Hydrogen Plasma Treatment on a-SiC Resistivity of the SiC/SiO2/Si Structures

2011 ◽  
Vol 276 ◽  
pp. 21-25
Author(s):  
S.O. Gordienko ◽  
A. Nazarov ◽  
A.V. Rusavsky ◽  
A.V. Vasin ◽  
N. Rymarenko ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Plasma Treatment ◽  
Structural Characteristics ◽  
Hydrogen Plasma ◽  
Rf Plasma ◽  
Current Transport ◽  
Electrical Characteristics ◽  
Variable Range Hopping ◽  
Si Substrate ◽  
Sic Film

This paper presents an analysis of the electrical characteristics of the amorphous silicon carbide films deposited on the SiO2/Si substrate. Aspects of RF plasma treatment on electrical and structural characteristics of a-SiC film are discussed. It is demonstrated that the dominant mechanism of current transport in the a-SiC thin film is determined by variable-range hopping conductivity at the Fermi level. Studies of the a-SiC film at temperatures from 300 K to 600 K also indicate that silicon carbide is a perspective material for fabrication of temperature sensor.

Impact of Annealing on Surface Morphology and Photoluminescence of Self-Assembled Ge and Si Quantum Dots

2014 ◽  
Vol 14 (7) ◽  
pp. 5266-5271 ◽  
Author(s):  
Alireza Samavati ◽  
Zulkafli Othaman ◽  
Shadab Dabagh ◽  
Sib Krishna Ghoshal
Keyword(s):  
Quantum Dots ◽  
Surface Morphology ◽  
Self Assembled ◽  
Si Quantum Dots

Direct Observation of Dielectric Breakdown at Step-Bunching on 4H-SiC

2015 ◽  
Vol 821-823 ◽  
pp. 468-471 ◽  
Author(s):  
Yuki Mori ◽  
Mieko Matsumura ◽  
Hirotaka Hamamura ◽  
Toshiyuki Mine ◽  
Akio Shima ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Surface Morphology ◽  
Dielectric Breakdown ◽  
Optical Emission ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Tem Analysis ◽  
Mos Capacitor ◽  
Step Bunching ◽  
Electrical Stress

The mechanism of dielectric breakdown of oxide on step-bunching of 4H-silicon carbide (SiC) was investigated. Comparing the surface morphology obtained before forming metal-oxide-semiconductor (MOS) capacitor and optical emission on the capacitor under electrical stress, it was cleared that current concentrates on step-bunching and it often caused preferential dielectric breakdown. Based on TEM analysis and the observation of time dependence of emission under the stress, a new model was proposed to explain the dielectric breakdown on step-bunching.

scholarly journals EFFECT OF STIRRING RATE ON ELECTROCHEMICAL CODEPOSITION OF Ni-SiC COMPOSITE

2015 ◽  
Vol 12 (12) ◽  
pp. 30-33
Author(s):  
Kailash Hamal ◽  
Armila Rajbhandari ◽  
Gobinda Gyawali ◽  
Soo Wohn Lee
Keyword(s):  
Silicon Carbide ◽  
Surface Morphology ◽  
Cationic Surfactant ◽  
Coefficient Of Friction ◽  
Crystalline Phase ◽  
Crystal Orientation ◽  
Xrd Analysis ◽  
Stirring Rate ◽  
Nickel Silicon ◽  
Sulfamate Bath

Nickel-Silicon Carbide (Ni-SiC) composite has been prepared by electrochemical codeposition technique. Nickel sulfamate bath was used along with grain modifier saccharine and cationic surfactant cetyltrimetylammonium bromide (CTAB). The effect of stirring rate was systematically studied and optimized to get well dispersed SiC particles in appropriate amount. Mixed crystalline phase with reinforced [2 1 1] crystal orientation was obtained by XRD analysis. The result revealed that, 250 revolutions per minute (rpm) is optimum stirring rate for the electrochemical codeposition of Ni–SiC. Coating prepared at 250 rpm showed highest microhardness and lowest coefficient of friction with better surface morphology and well distributed nano SiC particles.Scientific World, Vol. 12, No. 12, September 2014, page 30-33       

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