scholarly journals Effect of doping on the phase stability and photophysical properties of CsPbI2Br perovskite thin films

RSC Advances ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 1440-1449
Author(s):  
Lahoucine Atourki ◽  
Mari Bernabé ◽  
Mohammed Makha ◽  
Khalid Bouabid ◽  
Mohammed Regragui ◽  
...  

In this study, we demonstrate that in addition to improving the crystallization of CsPbI2Br films, the incorporation of Cl− and hydroiodic acid in the precursor solution leads to the formation of films with high coverage and large grains size.

2019 ◽  
Vol 2019 ◽  
pp. 1-9 ◽  
Author(s):  
Chuangchuang Chang ◽  
Xiaoping Zou ◽  
Jin Cheng ◽  
Ying Yang ◽  
Yujun Yao ◽  
...  

Perovskite solar cells (PSCs) have been developed rapidly in recent years. How to modify the photophysical properties of perovskite films has become the critical issue, affecting device performance. In this paper, NaI doping into the perovskite layer is attempted to modulate the photophysical properties to improve the performance of PSCs. The perovskite layer was prepared by using the one-step solution spin coating method with doping different concentrations of NaI into the perovskite precursor solution and chlorobenzene employed as the antisolvent. Experimental results show that the absorption band edge and the peak position of the PL spectrum of the doped perovskite thin film were red shifted; thus, the band gap of the semiconductor film became narrow. Doping NaI into perovskite is an effective way, by which the photophysical properties of perovskite films are well modified, thus improving device performance.


Author(s):  
Andreas Kretschmer ◽  
Alexander Kirnbauer ◽  
Vincent Moraes ◽  
Daniel Primetzhofer ◽  
Kumar Yalamanchili ◽  
...  

Materials ◽  
2021 ◽  
Vol 14 (3) ◽  
pp. 589
Author(s):  
Jakub Ševčík ◽  
Pavel Urbánek ◽  
Barbora Hanulíková ◽  
Tereza Čapková ◽  
Michal Urbánek ◽  
...  

In recent work, the boron hydride anti-B18H22 was announced in the literature as a new laser dye, and, along with several of its derivatives, its solutions are capable of delivering blue luminescence with quantum yields of unity. However, as a dopant in solid polymer films, its luminescent efficiencies reduce dramatically. Clarification of underlying detrimental effects is crucial for any application and, thus, this contribution makes the initial steps in the use of these inorganic compounds in electrooptical devices based on organic polymer thin films. The photoluminescence behavior of the highly luminescent boron hydrides, anti-B18H22 and 3,3′,4,4′-Et4-anti-B18H18, were therefore investigated. The quantum yields of luminescence and photostabilities of both compounds were studied in different solvents and as polymer-solvent blends. The photophysical properties of both boranes are evaluated and discussed in terms of their solvent-solute interactions using photoluminescence (PL) and NMR spectroscopies. The UV degradability of prepared thin films was studied by fluorimetric measurement. The effect of the surrounding atmosphere, dopant concentration and the molecular structure were assessed.


2003 ◽  
Vol 18 (2) ◽  
pp. 357-362 ◽  
Author(s):  
Mary M. Sandstrom ◽  
Paul Fuierer

Control over crystallographic orientation in thin films is important, particularly with highly anisotropic structures. Because of its ferroelectric nature, the layered perovskite La2Ti2O7 has interesting piezoelectric and electrooptic properties that may be exploited when films are highly textured. Sol-gel films with an orientation factor of greater than 95% were fabricated without relying on epitaxial (lattice-matching) growth from the substrate. Film orientation and crystallization were confirmed by x-ray diffraction, scanning electron microscopy, atomic force microscopy, and optical measurements. The particle sizes in all precursor solutions were measured by dynamic light scattering experiments. Experimental results indicate that film orientation is a function of precursor solution concentration, size of the molecular clusters in the solution, and film thickness.


2009 ◽  
Vol 1203 ◽  
Author(s):  
Matthias Bäcker ◽  
Arshak Poghossian ◽  
Maryam H. Abouzar ◽  
Sylvia Wenmackers ◽  
Stoffel D. Janssens ◽  
...  

AbstractCapacitive field-effect electrolyte-diamond-insulator-semiconductor (EDIS) structures with O-terminated nanocrystalline diamond (NCD) as sensitive gate material have been realized and investigated for the detection of pH, penicillin concentration, and layer-by-layer adsorption of polyelectrolytes. The surface oxidizing procedure of NCD thin films as well as the seeding and NCD growth process on a Si-SiO2 substrate have been improved to provide high pH-sensitive, non-porous thin films without damage of the underlying SiO2 layer and with a high coverage of O-terminated sites. The NCD surface topography, roughness, and coverage of the surface groups have been characterized by SEM, AFM and XPS methods. The EDIS sensors with O-terminated NCD film treated in oxidizing boiling mixture for 45 min show a pH sensitivity of about 50 mV/pH. The pH-sensitive properties of the NCD have been used to develop an EDIS-based penicillin biosensor with high sensitivity (65-70 mV/decade in the concentration range of 0.25-2.5 mM penicillin G) and low detection limit (5 μM). The results of label-free electrical detection of layer-by-layer adsorption of charged polyelectrolytes are presented, too.


2006 ◽  
Vol 514-516 ◽  
pp. 1155-1160 ◽  
Author(s):  
Talaat Moussa Hammad

Sol gel indium tin oxide thin films (In: Sn = 90:10) were prepared by the sol-gel dipcoating process on silicon buffer substrate. The precursor solution was prepared by mixing SnCl2.2H2O and InCl3 dissolved in ethanol and acetic acid. The crystalline structure and grain orientation of ITO films were determined by X-ray diffraction. The surface morphology of the films was characterized by scanning electron microscope (SEM). Optical transmission and reflectance spectra of the films were analyzed by using a UV-visible spectrophotometer. The transport properties of majority charge carriers for these films were studied by Hall measurement. ITO thin film with electrical resistivity of 7.6 ×10-3 3.cm, Hall mobility of approximately 2 cm2(Vs)-1 and free carrier concentration of approximately 4.2 ×1020 cm-3 are obtained for films 100 nm thick films. The I-V curve measurement showed typical I-V characteristic behavior of sol gel ITO thin films.


1999 ◽  
Vol 606 ◽  
Author(s):  
S. Bhaskar ◽  
S. B. Majumder ◽  
P. S. Dobal ◽  
R. S. Katiyar ◽  
A. L. M. Cruz ◽  
...  

AbstractIn the present work we have optimized the process parameters to yield homogeneous, smooth ruthenium oxide (RuO2) thin films on silicon substrates by a solution deposition technique using RuCl3.×.H2O as the precursor material. Films were annealed in a temperature range of 300°C to 700°C, and it was found that RuO2 crystallizes at a temperature as low as 400°C. The crystallinity of the films improves with increased annealing temperature and the resistivity decreases from 4.86µΩ-m (films annealed at 400°C) to 2.94pµΩ (films annealed at 700°C). Ageing of the precursor solution has a pronounced effect on the measured resistivities of RuO2 thin films. It was found that the measured room temperature resistivities increases from 2.94µΩ-m to 45.7µΩ-m when the precursor sol is aged for aged 60 days. AFM analysis on the aged films shows that the grain size and the surface roughness of the annealed films increase with the ageing of the precursor solution. From XPS analysis we have detected the presence of non-transformed RuCl3 in case of films prepared from aged solution. We propose, that solution ageing inhibits the transformation of RuCl3 to RuO2 during the annealing of the films. The deterioration of the conductivity with solution ageing is thought to be related with the chloride contamination in the annealed films.


2010 ◽  
Vol 97 (15) ◽  
pp. 151901 ◽  
Author(s):  
R. Rachbauer ◽  
D. Holec ◽  
P. H. Mayrhofer

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