Interface engineering for gain perovskite photodetectors with extremely high external quantum efficiency
Keyword(s):
Efficient CH3NH3PbI3 photodetectors (PDs) with an extremely high gain of the maximum external quantum efficiency (EQE) of 140 000% within the ultraviolet region to the near infrared region (NIR) and an extremely high responsivity (R) under a low bias of −5 V were successfully fabricated.