scholarly journals Solution-processable and photopolymerisable TiO2 nanorods as dielectric layers for thin film transistors

RSC Advances ◽  
2020 ◽  
Vol 10 (43) ◽  
pp. 25540-25546
Author(s):  
Fei Cheng ◽  
Emanuele Verrelli ◽  
Fahad A. Alharthi ◽  
Satyajit Das ◽  
Thomas D. Anthopoulos ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Dielectric Layer ◽  
Thin Film Transistors ◽  
Thin Film Transistor ◽  
Tio2 Nanorods ◽  
Solution Processed ◽  
Dielectric Layers ◽  
Solution Processable

A prototype solution-processed n-type thin film transistor was fabricated. The film incorporates a dielectric layer prepared from solution-processed and photopolymerised inorganic/organic TiO2 nanorods and zinc oxide as the semiconductor, also deposited from solution.

Performance modification in solution-processed SnZnO thin film transistor

2010 ◽  
Vol 1247 ◽  
Author(s):  
Dong Lim Kim ◽  
Doo Na Kim ◽  
You Seung Rim ◽  
Si Joon Kim ◽  
Hyun Jae Kim
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Annealing Temperature ◽  
Thin Film Transistor ◽  
Solution Process ◽  
Molar Ratio ◽  
Electrical Characteristics ◽  
Solution Processed

AbstractTin zinc oxide (SnZnO) thin film transistors (TFTs) with different component fraction fabricated by solution process were reported. Sn chloride and Zn acetate were used as precursor and the maximum annealing temperature was 500°C. The electrical characteristics of TFTs were acutely affected by the molar ratio between Sn and Zn in the lattice, and showed the highest mobility and on-to-off ratio of about 17 cm2/Vs and 2×106, respectively. The origins of the high performance were traced through both structural and electrical aspects. Sn was generally considered to offer carrier path by superposition of s orbital, but it was found that the increase of Sn fraction only below specific value in lattice contributed to increase mobility, which could be explained by the structural distortion and the defect generation. Zn atoms introduced in the lattice were necessary to control both mobility and carrier concentration. From these results, the solution-processed SnZnO TFT with high performance was suggested.

Solution-Processed Indium-Zinc Oxide Transparent Thin-Film Transistors

2008 ◽  
Vol 11 (1) ◽  
pp. H7 ◽  
Author(s):  
Chaun Gi Choi ◽  
Seok-Jun Seo ◽  
Byeong-Soo Bae
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Solution Processed ◽  
Indium Zinc Oxide

scholarly journals Tuning the electrical performance and bias stability of a semiconducting SWCNT thin film transistor with an atomic layer deposited AlZrOx composite

RSC Advances ◽  
2017 ◽  
Vol 7 (83) ◽  
pp. 52517-52523 ◽  
Author(s):  
Jun Li ◽  
Chuan-Xin Huang ◽  
Jian-Hua Zhang
Keyword(s):  
Thin Film ◽  
Carbon Nanotube ◽  
Thin Film Transistors ◽  
Thin Film Transistor ◽  
Atomic Layer ◽  
Electrical Performance ◽  
Solution Processed ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon ◽  
Bias Stability

Solution-processed semiconducting single-walled carbon nanotube (s-SWCNT) thin film transistors (TFTs) based on different atomic layer deposited AlZrOx insulators are fabricated and characterized.

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