Enhanced piezoelectricity and reduced leakage current of a novel (1 − x)Bi0.5Na0.5TiO3–x(Sr0.7Bi0.2□0.1)TiO3 thin film

2021 ◽  
Author(s):  
Liuxue Xu ◽  
Shuanghao Wu ◽  
Kun Zhu ◽  
Baijie Song ◽  
Xiaofeng Zhou ◽  
...  
Keyword(s):  
Thin Film ◽  
Leakage Current ◽  
Piezoelectric Coefficient ◽  
Tio3 Thin Film

We achieved an ultra-high inverse piezoelectric coefficient of 144.11 pm V−1 from a novel 0.8Bi0.5Na0.5TiO3–0.2(Sr0.7Bi0.2□0.1)TiO3 thin film.

Leakage current of (Ba0.5Sr0.5)TiO3 thin film prepared by pulsed-laser deposition

2002 ◽  
Vol 406 (1-2) ◽  
pp. 200-203 ◽  
Author(s):  
Feng Yan ◽  
Helen L.W. Chan ◽  
Chung-Loong Choy ◽  
Wenbing Wu ◽  
Yening Wang
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Leakage Current ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Tio3 Thin Film

Leakage current models of thin film silicon-on-insulator devices

1998 ◽  
Vol 72 (10) ◽  
pp. 1199-1201 ◽  
Author(s):  
Hank Shin ◽  
Stella Hong ◽  
Tom Wetteroth ◽  
Syd R. Wilson ◽  
Dieter K. Schroder
Keyword(s):  
Thin Film ◽  
Leakage Current ◽  
Silicon On Insulator ◽  
Thin Film Silicon

Correlations Among Degradations in Lead Zirconate Titanate thin Film Capacitors

1993 ◽  
Vol 310 ◽  
Author(s):  
In K. Yoo ◽  
Seshu B. Desu ◽  
Jimmy Xing
Keyword(s):  
Thin Film ◽  
Leakage Current ◽  
Lead Zirconate Titanate ◽  
Oxygen Vacancies ◽  
Lead Zirconate ◽  
Electrical Degradation ◽  
Zirconate Titanate ◽  
Thin Film Capacitors ◽  
Pzt Thin Film ◽  
Degradation Properties

AbstractMany attempts have been made to reduce degradation properties of Lead Zirconate Titanate (PZT) thin film capacitors. Although each degradation property has been studied extensively for the sake of material improvement, it is desired that they be understood in a unified manner in order to reduce degradation properties simultaneously. This can be achieved if a common source(s) of degradations is identified and controlled. In the past it was noticed that oxygen vacancies play a key role in fatigue, leakage current, and electrical degradation/breakdown of PZT films. It is now known that space charges (oxygen vacancies, mainly) affect ageing, too. Therefore, a quantitative ageing mechanism is proposed based on oxygen vacancy migration under internal field generated by either remanent polarization or spontaneous polarization. Fatigue, leakage current, electrical degradation, and polarization reversal mechanisms are correlated with the ageing mechanism in order to establish guidelines for simultaneous degradation control of PZT thin film capacitors. In addition, the current pitfalls in the ferroelectric test circuit is discussed, which may cause false retention, imprint, and ageing.

Combinatorial (Ba,Sr)TiO3 thin film growth: X-ray diffraction and Raman spectroscopy

2009 ◽  
Vol 106 (3) ◽  
pp. 034108 ◽  
Author(s):  
H. Bouyanfif ◽  
J. Wolfman ◽  
M. El Marssi ◽  
Y. Yuzyuk ◽  
R. Bodeux ◽  
...  
Keyword(s):  
Thin Film ◽  
Raman Spectroscopy ◽  
Film Growth ◽  
Thin Film Growth ◽  
Tio3 Thin Film ◽  
X Ray Diffraction ◽  
X Ray

High k PVP titanium dioxide composite dielectric with low leakage current for thin film transistor

2021 ◽  
pp. 106413
Author(s):  
Yuexin Yang ◽  
Zhuohui Xu ◽  
Tian Qiu ◽  
Honglong Ning ◽  
Jinyao Zhong ◽  
...  
Keyword(s):  
Thin Film ◽  
Titanium Dioxide ◽  
Leakage Current ◽  
Thin Film Transistor ◽  
Low Leakage ◽  
Low Leakage Current ◽  
High K
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