Ba2B7O12F with novel FBB [B7O16F] and deep-ultraviolet cut-off edge

2021 ◽  
Author(s):  
Zhaohong Miao ◽  
Yun Yang ◽  
Zhonglei Wei ◽  
Zhihua Yang ◽  
Shilie Pan
Keyword(s):  
Ultraviolet Cutoff ◽  
Deep Ultraviolet

A new fluorooxoborate Ba2B7O12F features novel FBB [B7O16F] and two different sizes of channels in its anionic structure, which possesses a deep-ultraviolet cutoff edge of 180 nm and a large bandgap of 6.67 eV.

scholarly journals Syntheses, characterization, and theoretical calculation of Rb2Mg3(P2O7)2 polymorphs with deep-ultraviolet cutoff edges

2019 ◽  
Vol 63 (4) ◽  
pp. 593-601 ◽  
Author(s):  
Hongping Wu ◽  
Shiwei Liu ◽  
Shichao Cheng ◽  
Hongwei Yu ◽  
Zhanggui Hu ◽  
...  
Keyword(s):  
Theoretical Calculation ◽  
Ultraviolet Cutoff ◽  
Deep Ultraviolet

Li5Cs(SO4)3: A Potential Zero-order Wave Plate Material with Short Deep-ultraviolet Cutoff Edge

2021 ◽  
Author(s):  
Yuchen Yan ◽  
Yanna Chen ◽  
Bao Jiang ◽  
Qun Jing ◽  
Jun Zhang
Keyword(s):  
Zero Order ◽  
Plate Material ◽  
Wave Plate ◽  
Polarization Measurements ◽  
Ultraviolet Cutoff ◽  
Deep Ultraviolet

Zero-order wave plates play an important role in the polarization measurements and laser industry, while few materials can satisfy both small birefringence and a deep-ultraviolet (DUV; λ < 200 nm)...

Non-centrosymmetric BaNaP3O9 with a short deep-ultraviolet cutoff edge

2018 ◽  
Vol 764 ◽  
pp. 170-176 ◽  
Author(s):  
Xuefang Lu ◽  
Ronglan Wu ◽  
Qun Jing ◽  
Wenqiang Chen ◽  
Yunjing Shi ◽  
...  
Keyword(s):  
Ultraviolet Cutoff ◽  
Deep Ultraviolet

Cs3B3O3F6 with a Deep-Ultraviolet Cutoff Edge and a Suitable Birefringence as the Potential Zero-Order Waveplate Material

2020 ◽  
Vol 59 (18) ◽  
pp. 13014-13018
Author(s):  
Meng Cheng ◽  
Wenqi Jin ◽  
Zhihua Yang ◽  
Shilie Pan
Keyword(s):  
Zero Order ◽  
Ultraviolet Cutoff ◽  
Deep Ultraviolet

La2SrB8O16: A new rare earth borate with [B8O20]16− groups exhibiting a deep ultraviolet cutoff edge

2021 ◽  
Vol 298 ◽  
pp. 122126
Author(s):  
Jingcheng Feng ◽  
Youquan Liu ◽  
Huimin Song ◽  
Wang Liu ◽  
Yuwei Chen ◽  
...  
Keyword(s):  
Rare Earth ◽  
Ultraviolet Cutoff ◽  
Rare Earth Borate ◽  
Deep Ultraviolet

Novel organic, polymeric materials for electronics applications

2002 ◽  
Vol 722 ◽  
Author(s):  
Ram W. Sabnis ◽  
Mary J. Spencer ◽  
Douglas J. Guerrero
Keyword(s):  
Optical Density ◽  
Chemical Vapor ◽  
Polymeric Materials ◽  
Substantial Improvement ◽  
Polymeric Systems ◽  
Patterned Wafers ◽  
Visible Spectra ◽  
Potential Applications ◽  
Deep Ultraviolet ◽  
Deposited Films

AbstractNovel organic, polymeric materials and processes of depositing thin films on electronics substrates by chemical vapor deposition (CVD) have been developed and the lithographic behavior of photoresist coated over these CVD films at deep ultraviolet (DUV) wavelength has been evaluated. The specific monomers synthesized for DUV applications include [2.2](1,4)- naphthalenophane, [2.2](9,10)-anthracenophane and their derivatives which showed remarkable film uniformity on flat wafers and conformality over structured topography wafers, upon polymerization by CVD. The chemical, physical and optical properties of the deposited films have been characterized by measuring parameters such as thickness uniformity, solubility, conformality, adhesion to semiconductor substrates, ultraviolet-visible spectra, optical density, optical constants, defectivity, and resist compatibility. Scanning electron microscope (SEM) photos of cross-sectioned patterned wafers showed verticle profiles with no footing, standing waves or undercut. Resist profiles down to 0.10 νm dense lines and 0.09 νm isolated lines were achieved in initial tests. CVD coatings generated 96-100% conformal films, which is a substantial improvement over commercial spin-on polymeric systems. The light absorbing layers have high optical density at 248 nm and are therefore capable materials for DUV lithography applications. CVD is a potentially useful technology to extend lithography for sub-0.15 νm devices. These films have potential applications in microelectronics, optoelectronics and photonics.

Intrinsic doping limit and defect-assisted luminescence in Cs4PbBr6

2019 ◽  
Author(s):  
Young-Kwang Jung ◽  
Joaquin Calbo ◽  
Ji-Sang Park ◽  
Lucy D. Wahlley ◽  
Sunghyun Kim ◽  
...  
Keyword(s):  
First Principles ◽  
Room Temperature ◽  
Stokes Shift ◽  
Green Luminescence ◽  
Counter Ions ◽  
Self Consistent ◽  
Deep Ultraviolet ◽  
Halide Perovskite ◽  
Related Compounds ◽  
Level Analysis

Cs<sub>4</sub>PbBr<sub>6 </sub>is a member of the halide perovskite family that is built from isolated (zero-dimensional) PbBr<sub>6</sub><sup>4-</sup> octahedra with Cs<sup>+</sup> counter ions. The material exhibits anomalous optoelectronic properties: optical absorption and weak emission in the deep ultraviolet (310 - 375 nm) with efficient luminescence in the green region (~ 540 nm). Several hypotheses have been proposed to explain the giant Stokes shift including: (i) phase impurities; (ii) self-trapped exciton; (iii) defect emission. We explore, using first-principles theory and self-consistent Fermi level analysis, the unusual defect chemistry and physics of Cs<sub>4</sub>PbBr<sub>6</sub>. We find a heavily compensated system where the room-temperature carrier concentrations (< 10<sup>9</sup> cm<sup>-3</sup>) are more than one million times lower than the defect concentrations. We show that the low-energy Br-on-Cs antisite results in the formation of a polybromide (Br<sub>3</sub>) species that can exist in a range of charge states. We further demonstrate from excited-state calculations that tribromide moieties are photoresponsive and can contribute to the observed green luminescence. Photoactivity of polyhalide molecules is expected to be present in other halide perovskite-related compounds where they can influence light absorption and emission. <br>

Intrinsic doping limit and defect-assisted luminescence in Cs4PbBr6

2019 ◽  
Author(s):  
Young-Kwang Jung ◽  
Joaquin Calbo ◽  
Ji-Sang Park ◽  
Lucy D. Wahlley ◽  
Sunghyun Kim ◽  
...  
Keyword(s):  
First Principles ◽  
Room Temperature ◽  
Stokes Shift ◽  
Green Luminescence ◽  
Counter Ions ◽  
Self Consistent ◽  
Deep Ultraviolet ◽  
Halide Perovskite ◽  
Related Compounds ◽  
Level Analysis

Cs<sub>4</sub>PbBr<sub>6 </sub>is a member of the halide perovskite family that is built from isolated (zero-dimensional) PbBr<sub>6</sub><sup>4-</sup> octahedra with Cs<sup>+</sup> counter ions. The material exhibits anomalous optoelectronic properties: optical absorption and weak emission in the deep ultraviolet (310 - 375 nm) with efficient luminescence in the green region (~ 540 nm). Several hypotheses have been proposed to explain the giant Stokes shift including: (i) phase impurities; (ii) self-trapped exciton; (iii) defect emission. We explore, using first-principles theory and self-consistent Fermi level analysis, the unusual defect chemistry and physics of Cs<sub>4</sub>PbBr<sub>6</sub>. We find a heavily compensated system where the room-temperature carrier concentrations (< 10<sup>9</sup> cm<sup>-3</sup>) are more than one million times lower than the defect concentrations. We show that the low-energy Br-on-Cs antisite results in the formation of a polybromide (Br<sub>3</sub>) species that can exist in a range of charge states. We further demonstrate from excited-state calculations that tribromide moieties are photoresponsive and can contribute to the observed green luminescence. Photoactivity of polyhalide molecules is expected to be present in other halide perovskite-related compounds where they can influence light absorption and emission. <br>

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