Evolution of low-dimensional material-based field-effect transistors

Nanoscale ◽  
2021 ◽  
Vol 13 (10) ◽  
pp. 5162-5186
Author(s):  
Waqas Ahmad ◽  
Youning Gong ◽  
Ghulam Abbas ◽  
Karim Khan ◽  
Maaz Khan ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Research Progress ◽  
Low Dimensional ◽  
Recent Research Progress

The recent research progress on low-dimensional material-based FETs, including their classification and applications, has been reviewed.

scholarly journals Recent research progress of ferroelectric negative capacitance field effect transistors

2020 ◽  
Vol 69 (13) ◽  
pp. 137701
Author(s):  
Jun-Dong Chen ◽  
Wei-Hua Han ◽  
Chong Yang ◽  
Xiao-Song Zhao ◽  
Yang-Yan Guo ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Research Progress ◽  
Negative Capacitance ◽  
Recent Research Progress

scholarly journals Temperature Sensors Based on Organic Field-Effect Transistors

Chemosensors ◽  
2021 ◽  
Vol 10 (1) ◽  
pp. 12
Author(s):  
John Polena ◽  
Daniel Afzal ◽  
Jenner H. L. Ngai ◽  
Yuning Li
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Temperature Sensors ◽  
Precise Determination ◽  
Research Progress ◽  
Manufacturing Cost ◽  
Wearable Electronics ◽  
Organic Field Effect Transistors ◽  
Sensing Element

The rapid growth of wearable electronics, Internet of Things, smart packaging, and advanced healthcare technologies demand a large number of flexible, thin, lightweight, and ultralow-cost sensors. The accurate and precise determination of temperature in a narrow range (~0–50 °C) around ambient temperatures and near-body temperatures is critical for most of these applications. Temperature sensors based on organic field-effect transistors (OFETs) have the advantages of low manufacturing cost, excellent mechanical flexibility, easy integration with other devices, low cross-sensitivity, and multi-stimuli detectability and, therefore, are very suitable for the above applications. This article provides a timely overview of research progress in the development of OFET-based temperature sensors. First, the working mechanism of OFETs, the fundamental theories of charge transport in organic semiconductors, and common types of OFET temperature sensors based on the sensing element are briefly introduced. Next, notable advances in the development of OFET temperature sensors using small-molecule and polymer semiconductors are discussed separately. Finally, the progress of OFET temperature sensors is summarized, and the challenges associated with OFET temperature sensors and the perspectives of research directions in this field are presented.

Controllable Self-Assembly of PTCDI-C8 for High Mobility Low-Dimensional Organic Field-Effect Transistors

2019 ◽  
Vol 1 (10) ◽  
pp. 2030-2036
Author(s):  
Zhaosheng Hu ◽  
Zhenhua Lin ◽  
Jie Su ◽  
Jincheng Zhang ◽  
Yue Hao ◽  
...  
Keyword(s):  
Self Assembly ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Organic Field Effect Transistors ◽  
Low Dimensional

OPTICAL AND ELECTRICAL INVESTIGATION OF LOW DIMENSIONAL SELF-ASSEMBLED InAs QUANTUM DOT FIELD EFFECT TRANSISTORS

2006 ◽  
Vol 05 (06) ◽  
pp. 721-727
Author(s):  
YUXIN ZENG ◽  
WEI LIU ◽  
FUHUA YANG ◽  
PING XU ◽  
PINGHENG TAN ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Electrical Measurement ◽  
Current Voltage ◽  
Scattering Centers ◽  
Self Assembled ◽  
Inas Quantum Dot ◽  
Low Dimensional ◽  
Increasing Temperature

Self-assembled InAs QD dot-in-a-well (DWELL) structures were grown on GaAs substrate by MBE system, and heterojunction modulation-doped field effect transistor (MODFET) was fabricated. The optical properties of the samples show that the photoluminescence of InAs/GaAs self-assembled quantum dot (SAQD) is at 1.265 μm at 300 K. The temperature-dependence of the abnormal redshift of InAs SAQD wavelength with the increasing temperature was observed, which is closely related with the inhomogeneous size distribution of the InAs quantum dot. According to the electrical measurement, high electric field current–voltage characteristic of the MODFET device were obtained. The embedded InAs QD of the samples can be regard as scattering centers to the vicinity of the channel electrons. The transport property of the electrons in GaAs channel will be modulated by the QD due to the Coulomb interaction. It has been proposed that a MODFET embedded with InAs QDs presents a novel type of field effect photon detector.

scholarly journals Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model

2015 ◽  
Vol 6 (1) ◽  
Author(s):  
Ashish V. Penumatcha ◽  
Ramon B. Salazar ◽  
Joerg Appenzeller
Keyword(s):  
Schottky Barrier ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Black Phosphorus ◽  
Oxide Semiconductor ◽  
Thin Body ◽  
Barrier Heights ◽  
Substitutional Doping ◽  
Low Dimensional ◽  
Schottky Barrier Mosfet

Abstract Owing to the difficulties associated with substitutional doping of low-dimensional nanomaterials, most field-effect transistors built from carbon nanotubes, two-dimensional crystals and other low-dimensional channels are Schottky barrier MOSFETs (metal-oxide-semiconductor field-effect transistors). The transmission through a Schottky barrier-MOSFET is dominated by the gate-dependent transmission through the Schottky barriers at the metal-to-channel interfaces. This makes the use of conventional transistor models highly inappropriate and has lead researchers in the past frequently to extract incorrect intrinsic properties, for example, mobility, for many novel nanomaterials. Here we propose a simple modelling approach to quantitatively describe the transfer characteristics of Schottky barrier-MOSFETs from ultra-thin body materials accurately in the device off-state. In particular, after validating the model through the analysis of a set of ultra-thin silicon field-effect transistor data, we have successfully applied our approach to extract Schottky barrier heights for electrons and holes in black phosphorus devices for a large range of body thicknesses.

Recent Advances in Low-Dimensional Heterojunction-Based Tunnel Field Effect Transistors

2018 ◽  
Vol 5 (1) ◽  
pp. 1800569 ◽  
Author(s):  
Yawei Lv ◽  
Wenjing Qin ◽  
Chunlan Wang ◽  
Lei Liao ◽  
Xingqiang Liu
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Recent Advances ◽  
Low Dimensional

scholarly journals Research Progress in Donor-Acceptor Copolymers Field-Effect Transistors

2014 ◽  
Vol 34 (9) ◽  
pp. 1905 ◽  
Author(s):  
Xin Xia ◽  
Ting Lei ◽  
Jian Pei ◽  
Chenjiang Liu
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Research Progress ◽  
Donor Acceptor
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