scholarly journals Low‐Dimensional Hybrid Perovskites for Field‐Effect Transistors with Improved Stability: Progress and Challenges

2020 ◽  
Vol 6 (9) ◽  
pp. 2000137 ◽  
Author(s):  
Yuhang Liang ◽  
Feng Li ◽  
Rongkun Zheng
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Improved Stability ◽  
Low Dimensional

Si3N4/Si/In0.53Ga0.47As depletion‐mode metal‐insulator‐semiconductor field‐effect transistors with improved stability

1993 ◽  
Vol 62 (25) ◽  
pp. 3291-3293 ◽  
Author(s):  
D. S. L. Mui ◽  
Z. Wang ◽  
D. Biswas ◽  
A. L. Demirel ◽  
N. Teraguchi ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Improved Stability

Controllable Self-Assembly of PTCDI-C8 for High Mobility Low-Dimensional Organic Field-Effect Transistors

2019 ◽  
Vol 1 (10) ◽  
pp. 2030-2036
Author(s):  
Zhaosheng Hu ◽  
Zhenhua Lin ◽  
Jie Su ◽  
Jincheng Zhang ◽  
Yue Hao ◽  
...  
Keyword(s):  
Self Assembly ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Organic Field Effect Transistors ◽  
Low Dimensional

OPTICAL AND ELECTRICAL INVESTIGATION OF LOW DIMENSIONAL SELF-ASSEMBLED InAs QUANTUM DOT FIELD EFFECT TRANSISTORS

2006 ◽  
Vol 05 (06) ◽  
pp. 721-727
Author(s):  
YUXIN ZENG ◽  
WEI LIU ◽  
FUHUA YANG ◽  
PING XU ◽  
PINGHENG TAN ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Electrical Measurement ◽  
Current Voltage ◽  
Scattering Centers ◽  
Self Assembled ◽  
Inas Quantum Dot ◽  
Low Dimensional ◽  
Increasing Temperature

Self-assembled InAs QD dot-in-a-well (DWELL) structures were grown on GaAs substrate by MBE system, and heterojunction modulation-doped field effect transistor (MODFET) was fabricated. The optical properties of the samples show that the photoluminescence of InAs/GaAs self-assembled quantum dot (SAQD) is at 1.265 μm at 300 K. The temperature-dependence of the abnormal redshift of InAs SAQD wavelength with the increasing temperature was observed, which is closely related with the inhomogeneous size distribution of the InAs quantum dot. According to the electrical measurement, high electric field current–voltage characteristic of the MODFET device were obtained. The embedded InAs QD of the samples can be regard as scattering centers to the vicinity of the channel electrons. The transport property of the electrons in GaAs channel will be modulated by the QD due to the Coulomb interaction. It has been proposed that a MODFET embedded with InAs QDs presents a novel type of field effect photon detector.

scholarly journals Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model

2015 ◽  
Vol 6 (1) ◽  
Author(s):  
Ashish V. Penumatcha ◽  
Ramon B. Salazar ◽  
Joerg Appenzeller
Keyword(s):  
Schottky Barrier ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Black Phosphorus ◽  
Oxide Semiconductor ◽  
Thin Body ◽  
Barrier Heights ◽  
Substitutional Doping ◽  
Low Dimensional ◽  
Schottky Barrier Mosfet

Abstract Owing to the difficulties associated with substitutional doping of low-dimensional nanomaterials, most field-effect transistors built from carbon nanotubes, two-dimensional crystals and other low-dimensional channels are Schottky barrier MOSFETs (metal-oxide-semiconductor field-effect transistors). The transmission through a Schottky barrier-MOSFET is dominated by the gate-dependent transmission through the Schottky barriers at the metal-to-channel interfaces. This makes the use of conventional transistor models highly inappropriate and has lead researchers in the past frequently to extract incorrect intrinsic properties, for example, mobility, for many novel nanomaterials. Here we propose a simple modelling approach to quantitatively describe the transfer characteristics of Schottky barrier-MOSFETs from ultra-thin body materials accurately in the device off-state. In particular, after validating the model through the analysis of a set of ultra-thin silicon field-effect transistor data, we have successfully applied our approach to extract Schottky barrier heights for electrons and holes in black phosphorus devices for a large range of body thicknesses.

N-Heterocyclic-Carbene-Treated Gold Surfaces in Pentacene Organic Field-Effect Transistors: Improved Stability and Contact at the Interface

2018 ◽  
Vol 57 (17) ◽  
pp. 4792-4796 ◽  
Author(s):  
Aifeng Lv ◽  
Matthias Freitag ◽  
Kathryn M. Chepiga ◽  
Andreas H. Schäfer ◽  
Frank Glorius ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Gold Surfaces ◽  
Improved Stability

Recent Advances in Low-Dimensional Heterojunction-Based Tunnel Field Effect Transistors

2018 ◽  
Vol 5 (1) ◽  
pp. 1800569 ◽  
Author(s):  
Yawei Lv ◽  
Wenjing Qin ◽  
Chunlan Wang ◽  
Lei Liao ◽  
Xingqiang Liu
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Recent Advances ◽  
Low Dimensional

Evolution of low-dimensional material-based field-effect transistors

Nanoscale ◽  
2021 ◽  
Vol 13 (10) ◽  
pp. 5162-5186
Author(s):  
Waqas Ahmad ◽  
Youning Gong ◽  
Ghulam Abbas ◽  
Karim Khan ◽  
Maaz Khan ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Research Progress ◽  
Low Dimensional ◽  
Recent Research Progress

The recent research progress on low-dimensional material-based FETs, including their classification and applications, has been reviewed.

Low-Dimensional Arylacetylenes for Solution-Processable Organic Field-Effect Transistors

2009 ◽  
Vol 21 (13) ◽  
pp. 2592-2594 ◽  
Author(s):  
Assunta Marrocchi ◽  
Mirko Seri ◽  
Choongik Kim ◽  
Antonio Facchetti ◽  
Aldo Taticchi ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Solution Processable ◽  
Low Dimensional

Low-dimensional materials-based field-effect transistors

2018 ◽  
Vol 6 (5) ◽  
pp. 924-941 ◽  
Author(s):  
F. F. Wang ◽  
X. Y. Hu ◽  
X. X. Niu ◽  
J. Y. Xie ◽  
S. S. Chu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Review Article ◽  
Low Dimensional ◽  
Low Dimensional Materials

The review article summarizes the research on low-dimensional materials-based field-effect transistors, which will help in device downscaling.

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