Quantum confinement in group III–V semiconductor 2D nanostructures

Nanoscale ◽  
2020 ◽  
Vol 12 (33) ◽  
pp. 17494-17501 ◽  
Author(s):  
Luis A. Cipriano ◽  
Giovanni Di Liberto ◽  
Sergio Tosoni ◽  
Gianfranco Pacchioni

Band gap variation in group III–V semiconductor slabs due to quantum size effects.

1992 ◽  
Vol 283 ◽  
Author(s):  
R. Tsu ◽  
L. Ioriatti ◽  
J. F. Harvey ◽  
H. Shen ◽  
R. A. Lux

ABSTRACTThe reduction of the dielectric constant due to quantum confinement is studied both experimentally and theoretically. Angle resolved ellipsometry measurements with Ar- and He-Ne-lasers give values for the index of refraction far below what can be accounted for from porosity alone. A modified Penn model to include quantum size effects has been used to calculate the reduction in the static dielectric constant (ε) with extreme confinement. Since the binding energy of shallow impurities depends inversely on ε2, the drastic decrease in the carrier concentration as a result of the decrease in ε leads to a self-limiting process for the electrochemical etching of porous silicon.


1988 ◽  
Vol 38 (8) ◽  
pp. 5726-5729 ◽  
Author(s):  
Shoji Furukawa ◽  
Tatsuro Miyasato

2015 ◽  
Vol 17 (7) ◽  
pp. 5063-5071 ◽  
Author(s):  
Debajyoti Das ◽  
Arup Samanta

An energy blue shift due to quantum confinement effects in tiny nc-Si QDs accompanied by larger Stokes shifts in PL at smaller dimensions.


2016 ◽  
Author(s):  
◽  
Yiyao Chen

When metals are synthesized on the nanoscale, new physics can arise in the growth process as quantum confinement of the conduction electrons, known as quantum size effects, can lead to preferred heights of metallic nanoscale islands. Despite a significant amount of prior research, there has been a poor understanding of the growth behavior of the simple noble metal, Ag, on the Si(111)7x7 substrate and researchers have been unable to connect its growth morphology to quantum size effects. This dissertation investigated the growth of Ag on Si(111)7x7, in situ and in ultra-high vacuum, using synchrotron x-ray scattering. Because of the unique ability of this technique to explore the structure of a buried interface on the atomic scale, these studies led to a clear understanding of the role of quantum size effects in the growth behavior of this system. The studies address the epitaxial relationship between Ag and the substrate as well as the transition from the wetting layer to the growth of nanoscale islands. It is found that islands have a minimum thickness of three Ag atomic layers, which is in contrast to the bilayer on top of a wetting layer that has been reported in previous scanning tunneling microscopy studies. Ag islands are found to form after the completion of the Ag/Si(111)7x7 wetting layer and they convert the underlying wetting layer into the FCC structure of the island. The observed preference of the Ag islands is explained by the energy per area of the island, which derives from quantum confinement effects, and its two phase coexistence with the wetting layer. For thicker island heights, it is found that the distribution of island heights refl ect the minimum thickness of three layers. The height fluctuations are observed to exhibit a Poisson-like distribution where only the low heights in the fl uctuation spectrum deviate from a Poisson distribution. A model of the height distribution is presented. Techniques for exploring buried nanoscale vacancy defects in metals using diffuse x-ray scattering were also explored in this dissertation. Strain fields due to nanoscale vacancy clusters located below a surface were explored through analytical modeling of elastic displacements as well from results of accelerated molecular dynamics simulations. A method for numerically calculating diffuse scattering from nanoscale vacancy clusters was also explored. As new technologies continue to exploit thin-film metals on nanoscale dimensions, this investigation provides important new understanding about how metals grow on the nanoscale.


Author(s):  
С.Б. Донаев ◽  
Б.Е. Умирзаков

Nanocrystalline phases and GaAlP films were obtained by implanting Al+ ions with E0 = 1 keV at different doses on the surface of a GaP(111) single crystal, and their electronic and crystalline structures were studied. It is shown that the type and lattice parameters of a three-component nanostructure are in good agreement with those for the substrate. The relationship between the band gap Eg and the sizes of nanocrystalline phases is studied. It has been established that in the case of surface sizes of phases d less than 35–40 nm (thickness 3.5–4 nm), the quantum-size effects appear in the Ga0.6Al0.4P nanocrystalline phases.


1991 ◽  
Vol 16 (6) ◽  
pp. 623-638 ◽  
Author(s):  
P.A. Badoz ◽  
F. Arnaud d'Avitaya ◽  
E. Rosencher

1983 ◽  
Vol 44 (C10) ◽  
pp. C10-375-C10-378 ◽  
Author(s):  
P. Ahlqvist ◽  
P. de Andrés ◽  
R. Monreal ◽  
F. Flores

1968 ◽  
Vol 96 (9) ◽  
pp. 61-86 ◽  
Author(s):  
B.A. Tavger ◽  
V.Ya. Demikhovskii

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