Quantum size effects on the optical properties of nc-Si QDs embedded in an a-SiOx matrix synthesized by spontaneous plasma processing

2015 ◽  
Vol 17 (7) ◽  
pp. 5063-5071 ◽  
Author(s):  
Debajyoti Das ◽  
Arup Samanta

An energy blue shift due to quantum confinement effects in tiny nc-Si QDs accompanied by larger Stokes shifts in PL at smaller dimensions.

1992 ◽  
Vol 283 ◽  
Author(s):  
R. Tsu ◽  
L. Ioriatti ◽  
J. F. Harvey ◽  
H. Shen ◽  
R. A. Lux

ABSTRACTThe reduction of the dielectric constant due to quantum confinement is studied both experimentally and theoretically. Angle resolved ellipsometry measurements with Ar- and He-Ne-lasers give values for the index of refraction far below what can be accounted for from porosity alone. A modified Penn model to include quantum size effects has been used to calculate the reduction in the static dielectric constant (ε) with extreme confinement. Since the binding energy of shallow impurities depends inversely on ε2, the drastic decrease in the carrier concentration as a result of the decrease in ε leads to a self-limiting process for the electrochemical etching of porous silicon.


1983 ◽  
Vol 44 (C10) ◽  
pp. C10-375-C10-378 ◽  
Author(s):  
P. Ahlqvist ◽  
P. de Andrés ◽  
R. Monreal ◽  
F. Flores

2001 ◽  
Vol 15 (02) ◽  
pp. 191-200 ◽  
Author(s):  
M. GHANASHYAM KRISHNA ◽  
A. K. BHATTACHARYA

Quantum confinement effects on the optical properties of ion beam sputtered nickel oxide thin films are reported. Thin films with crystallite sizes in the range 9 to 14 nm have been deposited on to fused silica substrates. There is an increase in band gap, from 3.4 to 3.9 eV, and a decrease in refractive index, from 2.4 to 1.6, with decrease in crystallite size, that can be attributed to quantum confinement effects. The effective mass approximation has been used to explain the observed behaviour in band gap variation.


2012 ◽  
Vol 725 ◽  
pp. 251-254
Author(s):  
Yuki Mizukami ◽  
D. Kosemura ◽  
M. Takei ◽  
Y. Numasawa ◽  
Y. Ohshita ◽  
...  

Raman spectroscopy and photoluminescence were performed in order to understand the optical properties of nanocrystal Si in relation to quantum confinement effects. The nanocrystal Si (nc-Si) dots in the SiO2 layer were fabricated by the H2 plasma treatment and chemical vapour deposition followed by the oxidation of the nc-Si dots surface. The post-annealing was also performed to improve the crystalline quality of nc-Si at 1050 °C for 5 and 10 min. There is a good correlation of the quantum confinement effects between the results of Raman spectroscopy and photoluminescence. The Raman spectra from nc-Si were analysed using the model of Richter et al. As a result, the sizes of the nc-Si dots were consistent with those obtained by transmission electron microscopy and X-ray diffraction. Moreover, the compressive stress in the nc-Si dots were evaluated which was induced by the SiO2 surroundings.


2013 ◽  
Vol 117 (13) ◽  
pp. 6741-6746 ◽  
Author(s):  
Sukhendu Mandal ◽  
Juan Wang ◽  
Randall E. Winans ◽  
Lasse Jensen ◽  
Ayusman Sen

1995 ◽  
Vol 51 (8) ◽  
pp. 5192-5199 ◽  
Author(s):  
M. Nikl ◽  
K. Nitsch ◽  
K. Polak ◽  
G. P. Pazzi ◽  
P. Fabeni ◽  
...  

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