Optimal architecture for ultralow noise graphene transistors at room temperature

Saloni Kakkar; Paritosh Karnatak; Md. Ali Aamir; Kenji Watanabe; Takashi Taniguchi; Arindam Ghosh

doi:10.1039/d0nr03448g

Optimal architecture for ultralow noise graphene transistors at room temperature

Nanoscale ◽

10.1039/d0nr03448g ◽

2020 ◽

Vol 12 (34) ◽

pp. 17762-17768

Author(s):

Saloni Kakkar ◽

Paritosh Karnatak ◽

Md. Ali Aamir ◽

Kenji Watanabe ◽

Takashi Taniguchi ◽

...

Keyword(s):

Field Effect ◽

Room Temperature ◽

Field Effect Transistors ◽

Low Frequency ◽

Low Noise ◽

Frequency Noise ◽

Low Frequency Noise ◽

Engineering Strategy

The fundamental origin of low-frequency noise in graphene field effect transistors (GFETs) has been widely explored but a generic engineering strategy towards low noise GFETs is lacking.

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Measurement of Low-Frequency Noise of Modern Low-Noise Junction Field Effect Transistors

IEEE Transactions on Instrumentation and Measurement ◽

10.1109/tim.2005.858534 ◽

2005 ◽

Vol 54 (6) ◽

pp. 2427-2432 ◽

Cited By ~ 15

Author(s):

F.A. Levinzon

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Low Frequency ◽

Low Noise ◽

Frequency Noise ◽

Low Frequency Noise ◽

Junction Field Effect Transistors

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Low frequency noise in SiGe-base heterojunction bipolar transistors and SiGe-channel metal oxide semiconductor field effect transistors

Microelectronics Reliability ◽

10.1016/s0026-2714(00)00059-7 ◽

2000 ◽

Vol 40 (11) ◽

pp. 1897-1903 ◽

Cited By ~ 6

Author(s):

J.A Chroboczek ◽

G Ghibaudo

Keyword(s):

Metal Oxide ◽

Heterojunction Bipolar Transistors ◽

Field Effect ◽

Field Effect Transistors ◽

Low Frequency ◽

Bipolar Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Frequency Noise ◽

Low Frequency Noise

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Low-frequency noise in top-gated ambipolar carbon nanotube field effect transistors

Applied Physics Letters ◽

10.1063/1.2940590 ◽

2008 ◽

Vol 92 (22) ◽

pp. 223114 ◽

Cited By ~ 18

Author(s):

Guangyu Xu ◽

Fei Liu ◽

Song Han ◽

Koungmin Ryu ◽

Alexander Badmaev ◽

...

Keyword(s):

Carbon Nanotube ◽

Field Effect ◽

Field Effect Transistors ◽

Low Frequency ◽

Frequency Noise ◽

Low Frequency Noise

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Low frequency noise in 4H-SiC metal oxide semiconductor field effect transistors

Journal of Applied Physics ◽

10.1063/1.3009664 ◽

2008 ◽

Vol 104 (9) ◽

pp. 094505 ◽

Cited By ~ 9

Author(s):

S. L. Rumyantsev ◽

M. S. Shur ◽

M. E. Levinshtein ◽

P. A. Ivanov ◽

J. W. Palmour ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Low Frequency ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Frequency Noise ◽

Low Frequency Noise

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Transitions between channel and contact regimes of low-frequency noise in many-layer MoS2 field effect transistors

Applied Physics Letters ◽

10.1063/1.5063501 ◽

2019 ◽

Vol 114 (11) ◽

pp. 113502 ◽

Cited By ~ 3

Author(s):

Jiseok Kwon ◽

Joon Hyeong Park ◽

Collin J. Delker ◽

Charles T. Harris ◽

Brian Swartzentruber ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Low Frequency ◽

Frequency Noise ◽

Low Frequency Noise

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Low-frequency noise in individual carbon nanotube field-effect transistors with top, side and back gate configurations: effect of gamma irradiation

Nanotechnology ◽

10.1088/0957-4484/25/3/035703 ◽

2013 ◽

Vol 25 (3) ◽

pp. 035703 ◽

Cited By ~ 6

Author(s):

V A Sydoruk ◽

K Goß ◽

C Meyer ◽

M V Petrychuk ◽

B A Danilchenko ◽

...

Keyword(s):

Carbon Nanotube ◽

Gamma Irradiation ◽

Field Effect ◽

Field Effect Transistors ◽

Low Frequency ◽

Frequency Noise ◽

Low Frequency Noise ◽

Back Gate

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Characterization of Low-Frequency Noise in Etched GaAs Nanowire Field-Effect Transistors Having SiNxGate Insulator

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.06fe18 ◽

2012 ◽

Vol 51 (6S) ◽

pp. 06FE18 ◽

Cited By ~ 4

Author(s):

Toru Muramatsu ◽

Kensuke Miura ◽

Yuta Shiratori ◽

Zenji Yatabe ◽

Seiya Kasai

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Low Frequency ◽

Frequency Noise ◽

Low Frequency Noise ◽

Gaas Nanowire

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Low-Frequency Noise in AlTiO/AlGaN/GaN Metal-Insulator-Semiconductor Heterojunction Field-Effect Transistors

10.7567/ssdm.2015.m-2-5 ◽

2015 ◽

Author(s):

S.P. Le ◽

T. Ui ◽

T.Q. Nguyen ◽

H.A. Shih ◽

T. Suzuki

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Low Frequency ◽

Frequency Noise ◽

Low Frequency Noise ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Heterojunction Field Effect Transistors

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Low-frequency noise and mobility fluctuations in AlGaN/GaN heterostructure field-effect transistors

Applied Physics Letters ◽

10.1063/1.126672 ◽

2000 ◽

Vol 76 (23) ◽

pp. 3442-3444 ◽

Cited By ~ 38

Author(s):

J. A. Garrido ◽

B. E. Foutz ◽

J. A. Smart ◽

J. R. Shealy ◽

M. J. Murphy ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Low Frequency ◽

Frequency Noise ◽

Low Frequency Noise ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure ◽

Mobility Fluctuations

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Impact of granular work function variation in a gate electrode on low-frequency noise for fin field-effect transistors

Applied Physics Express ◽

10.7567/apex.8.044201 ◽

2015 ◽

Vol 8 (4) ◽

pp. 044201 ◽

Cited By ~ 3

Author(s):

Takashi Matsukawa ◽

Koichi Fukuda ◽

Yongxun Liu ◽

Junichi Tsukada ◽

Hiromi Yamauchi ◽

...

Keyword(s):

Work Function ◽

Field Effect ◽

Field Effect Transistors ◽

Low Frequency ◽

Frequency Noise ◽

Low Frequency Noise ◽

Gate Electrode

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