scholarly journals An electron holography study of perpendicular magnetic tunnel junctions nanostructured by deposition on pre-patterned conducting pillars

Nanoscale ◽  
2020 ◽  
Vol 12 (33) ◽  
pp. 17312-17318
Author(s):  
V. Boureau ◽  
V. D. Nguyen ◽  
A. Masseboeuf ◽  
A. Palomino ◽  
E. Gautier ◽  
...  
Keyword(s):  
Magnetic Induction ◽  
Tunnel Junctions ◽  
Random Access ◽  
Magnetic Tunnel Junctions ◽  
Temperature Behavior ◽  
Electron Holography ◽  
Induction Field ◽  
Magnetic Induction Field

Electron holography investigation of the magnetic induction field of perpendicular magnetic tunnel junctions for the fabrication of magnetic random access memories (MRAM), and temperature behavior.

Simplified Magnetic Induction Field of Magnetite Particles With Irregular Shape

2019 ◽  
Vol 55 (1) ◽  
pp. 1-5
Author(s):  
Jiangang Ku ◽  
Weixin Wu ◽  
Rongdong Deng ◽  
Weiran Zuo ◽  
Wanzhong Yin
Keyword(s):  
Magnetic Induction ◽  
Irregular Shape ◽  
Induction Field ◽  
Magnetic Induction Field ◽  
Magnetite Particles

scholarly journals Electron holography investigation on the barrier structures of Co based magnetic tunnel junctions

2005 ◽  
Vol 54 (12) ◽  
pp. 5861
Author(s):  
Zhang Zhe ◽  
Zhu Tao ◽  
Feng Yu-Qing ◽  
Zhang Ze
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Electron Holography

TETRAGONAL HEUSLER-LIKE Mn–Ga ALLOYS BASED PERPENDICULAR MAGNETIC TUNNEL JUNCTIONS

SPIN ◽  
2014 ◽  
Vol 04 (04) ◽  
pp. 1440024 ◽  
Author(s):  
QINLI MA ◽  
ATSUSHI SUGIHARA ◽  
KAZUYA SUZUKI ◽  
XIANMIN ZHANG ◽  
TERUNOBU MIYAZAKI ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Random Access ◽  
Magnetic Tunnel Junctions ◽  
Perpendicular Magnetic Anisotropy ◽  
Random Access Memory ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Current Status ◽  
Access Memory ◽  
Magnetic Random Access Memory

Films of the Mn -based tetragonal Heusler-like alloys, such as Mn – Ga , exhibit a large perpendicular magnetic anisotropy (PMA), small damping constant, small saturation magnetization and large spin polarizations. These properties are attractive for the application to the next generation high density spin-transfer-torque (STT) magnetic random access memory (STT-MRAM). We reviewed the structure, magnetic properties and Gilbert damping of the alloy films with large PMA, and the current status of research on tunnel magnetoresistance (TMR) in perpendicular magnetic tunnel junctions (p-MTJs) based on Mn -based tetragonal Heusler-like alloy electrode, and also discuss the issues for the application of those to STT-MRAM.

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