scholarly journals Formation and manipulation of domain walls with 2 nm domain periodicity in BaTiO3 without contact electrodes

Nanoscale ◽  
2020 ◽  
Vol 12 (20) ◽  
pp. 11136-11142
Author(s):  
Maya Barzilay ◽  
Yachin Ivry
Keyword(s):  
Domain Walls ◽  
Ferroelectric Domains ◽  
Contact Electrodes

In situ contactless formation and switching of two nanometre periodic ferroelectric domains in BaTiO3.

scholarly journals Structure and Dynamics of Ferroelectric Domains in Polycrystalline Pb(Fe1/2Nb1/2)O3

Materials ◽  
2019 ◽  
Vol 12 (8) ◽  
pp. 1327 ◽  
Author(s):  
Ursic ◽  
Bencan ◽  
Prah ◽  
Dragomir ◽  
Malic
Keyword(s):  
Domain Wall ◽  
Ambient Temperature ◽  
Domain Structure ◽  
Domain Walls ◽  
Domain Switching ◽  
Piezoresponse Force Microscopy ◽  
Paraelectric Phase Transition ◽  
Force Microscopy ◽  
Ferroelectric Domains

A complex domain structure with variations in the morphology is observed at ambient temperature in monoclinic Pb(Fe1/2Nb1/2)O3. Using electron microscopy and piezoresponse force microscopy, it is possible to reveal micrometre-sized wedge, lamellar-like, and irregularly shaped domains. By increasing the temperature, the domain structure persists up to 80 °C, and then starts to disappear at around 100 °C due to the proximity of the ferroelectric–paraelectric phase transition, in agreement with macroscopic dielectric measurements. In order to understand to what degree domain switching can occur in the ceramic, the mobility of the domain walls was studied at ambient temperature. The in situ poling experiment performed using piezoresponse force microscopy resulted in an almost perfectly poled area, providing evidence that all types of domains can be easily switched. By poling half an area with 20 V and the other half with −20 V, two domains separated by a straight domain wall were created, indicating that Pb(Fe1/2Nb1/2)O3 is a promising material for domain-wall engineering.

Investigation of ferroelectrics using conventional and in situ electron microscopy

1994 ◽  
Vol 52 ◽  
pp. 586-587
Author(s):  
V. Saikumar ◽  
H. M. Chan ◽  
M. P. Harmer
Keyword(s):  
Nonvolatile Memory ◽  
Ferroelectric Materials ◽  
Gate Insulator ◽  
Sensors And Actuators ◽  
In Situ Electron Microscopy ◽  
Ferroelectric Domains ◽  
Domain Boundaries ◽  
Domain Interactions ◽  
Memory Applications

In recent years, there has been a growing interest in the application of ferroelectric thin films for nonvolatile memory applications and as a gate insulator in DRAM structures. In addition, bulk ferroelectric materials are also widely used as components in electronic circuits and find numerous applications in sensors and actuators. To a large extent, the performance of ferroelectric materials are governed by the ferroelectric domains (with dimensions in the micron to sub-micron range) and the switching of domains in the presence of an applied field. Conventional TEM studies of ferroelectric domains structures, in conjunction with in-situ studies of the domain interactions can aid in explaining the behavior of ferroelectric materials, while providing some answers to the mechanisms and processes that influence the performance of ferroelectric materials. A few examples from bulk and thin film ferroelectric materials studied using the TEM are discussed below.Figure 1 shows micrographs of ferroelectric domains obtained from undoped and Fe-doped BaTiO3 single crystals. The domain boundaries have been identified as 90° domains with the boundaries parallel to <011>.

scholarly journals Forward growth of ferroelectric domains with charged domain walls. Local switching on non-polar cuts

2021 ◽  
Vol 129 (4) ◽  
pp. 044103
Author(s):  
V. Ya. Shur ◽  
E. V. Pelegova ◽  
A. P. Turygin ◽  
M. S. Kosobokov ◽  
Yu. M. Alikin
Keyword(s):  
Domain Walls ◽  
Ferroelectric Domains

scholarly journals Flux Mapping and Magnetic Behavior of Grain Boundaries in Nd-Fe-B Magnets

1999 ◽  
Vol 589 ◽  
Author(s):  
V.V. Volkov ◽  
Yimei Zhu
Keyword(s):  
Magnetic Flux ◽  
Grain Boundaries ◽  
Domain Walls ◽  
Quantitative Description ◽  
Magnetic Behavior ◽  
Local Variation ◽  
Smooth Transition ◽  
Lorentz Microscopy ◽  
Hard Magnets

AbstractAdvanced Fresnel- & Foucault-Lorentz microscopy were applied to analyze magnetic behavior of the grain boundaries in Nd-Fe-B hard magnets. In-situ TEM magnetizing experiments combined with these imaging methods revealed the process of magnetization reversal in polycrystalline sintered and die-upset Nd-Fe-B under various magnetic fields. Fine details of magnetic flux distribution, derived from the magnetic interferograms created by phase-coherent Foucault imaging, provide a quantitative description of the local variation of magnetic flux. Our study suggests that the grain boundaries play an important multi-functional role in the reversal of magnetization, by acting as (a) pinning centers of domain walls, (b) centers of nucleation of reversal domains, and (c) sinks or sources for migrating magnetostatic charges and/or dipoles. They also ensure a smooth transition for irreversible remagnetization in polycrystalline samples.

In situ observation of the motion of ferroelectric domain walls in Bi4Ti3O12 single crystals

2016 ◽  
Vol 49 (5) ◽  
pp. 1645-1652 ◽  
Author(s):  
Wanneng Ye ◽  
Lingli Tang ◽  
Chaojing Lu ◽  
Huabing Li ◽  
Yichun Zhou
Keyword(s):  
Electron Beam ◽  
Electron Microscope ◽  
Single Crystals ◽  
Transmission Electron Microscope ◽  
Domain Walls ◽  
Domain Switching ◽  
Ferroelectric Domain ◽  
In Situ Observation ◽  
Transmission Electron

Five types of ferroelectric domain walls (DWs) are present in Bi4Ti3O12 single crystals (Ye et al., 2015). Here their motion was investigated in situ using transmission electron microscopy and optical microscopy. The motion of P (a)-90° DWs, P (a)-180° DWs and P (c)-180° DWs was observed through electron beam poling in a transmission electron microscope. The growth of new P s(a)-180° nanodomains was frequently seen and they tended to nucleate at preexisting P s(a)-90° DWs. Irregularly curved P (c)-180° DWs exhibit the highest mobility, while migration over a short range occurs occasionally for faceted P s(a)-90° DWs. In addition, the motion of P s(a)-90° DWs and the growth/annihilation of new needle-like P s(a)-90° domains in a 20 µm-thick crystal were observed under an external electric field on an optical microscope. Most of the new needle-like P s(a)-90° domains nucleate at preexisting P s(a)-90° DWs and the former are much smaller than the latter. This is very similar to the situation for P s(a)-180° domain switching induced by electron beam poling in a transmission electron microscope. Our observations suggest the energy hierarchy for different domains of P s(c)-180° ≤ P s(a)-180° ≤ P s(a)-90° ≤ new needle-like P s(a)-90° in ferroelectric Bi4Ti3O12.

Optimizing the efficiency of a periodically poled LNOI waveguide using in situ monitoring of the ferroelectric domains

2020 ◽  
Vol 116 (10) ◽  
pp. 101104 ◽  
Author(s):  
Yunfei Niu ◽  
Chen Lin ◽  
Xiaoyue Liu ◽  
Yan Chen ◽  
Xiaopeng Hu ◽  
...  
Keyword(s):  
In Situ Monitoring ◽  
Periodically Poled ◽  
Ferroelectric Domains

Synchrotron X-Ray Topographic Study of Defects in High Quality, Flux Grown Ktiopo4 Single Crystals

1993 ◽  
Vol 307 ◽  
Author(s):  
S. Wang ◽  
M. Dudley ◽  
L. K. Cheng ◽  
J. D. Bierlein
Keyword(s):  
Detailed Analysis ◽  
Single Crystals ◽  
Domain Walls ◽  
Defect Structures ◽  
Growth Sector ◽  
High Quality ◽  
X Ray ◽  
Free Region ◽  
Ferroelectric Domains ◽  
Section Topography

ABSTRACTDefect structures in large, high quality flux-grown KTP single crystals have been studied by using synchrotron white beam X-ray topography. Growth dislocations, inclusions, growth sector boundaries, growth bands and surface micro-scratches were imaged. A number of planar defects in the dislocation-free region are imaged and determined to be inversion twin lamellae (lamellar ferroelectric domains) which have never been previously reported in KTP crystals. These inversion twin lamellae were also studied by section topography. Detailed analysis of observed contrast revealed that the domain walls bounding the lamellae are faulted with a fault vector of ½[0±1±1]. This fault vector seems to be consistent with the atomic structure of KTP. A detailed analysis is presented and discussed.

Scanning secondary-electron microscopy on ferroelectric domains and domain walls in YMnO3

2012 ◽  
Vol 100 (15) ◽  
pp. 152903 ◽  
Author(s):  
J. Li ◽  
H. X. Yang ◽  
H. F. Tian ◽  
C. Ma ◽  
S. Zhang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Secondary Electron ◽  
Domain Walls ◽  
Ferroelectric Domains

scholarly journals In situ deposition/positioning of magnetic nanoparticles with ferroelectric nanolithography

2005 ◽  
Vol 20 (3) ◽  
pp. 712-718 ◽  
Author(s):  
Xiaojun Lei ◽  
Dongbo Li ◽  
Rui Shao ◽  
Dawn A. Bonnell
Keyword(s):  
Electron Hole ◽  
Reactive Metal ◽  
New Approach ◽  
Surface Electronic Structure ◽  
Multiple Components ◽  
In Situ Deposition ◽  
Ferroelectric Domains ◽  
Local Polarization ◽  
Direct Attachment

Ferroelectric nanolithography is a new approach to processing nanostructures, which can position multiple components made of various materials into predefined configurations. Local polarization in ferroelectric compounds is manipulated to control the surface electronic structure and direct attachment of molecules and particles. Here, the presence of optically excited electron-hole pairs on ferroelectric domains is confirmed, and reaction paths for photo reduction of several reactive metal particles are determined. Subsequent and simultaneous deposition of multiple metals is demonstrated, and the magnetic properties of Co based particles are confirmed.

Displacement Charge Patterns and Ferroelectric Domain Wall Dynamics Studied by In-Situ Tem

1999 ◽  
Vol 596 ◽  
Author(s):  
A. Krishnan ◽  
M. M. J. Treacy ◽  
M. E. Bisher ◽  
P. Chandra ◽  
P. B. Littlewood
Keyword(s):  
Electric Fields ◽  
Domain Walls ◽  
Energy State ◽  
Ferroelectric Domain ◽  
Potassium Niobate ◽  
In Situ Tem ◽  
Domain Wall Dynamics ◽  
Transmission Electron ◽  
Energy Domain

AbstractWe have observed the growth of domains in ferroelectric barium titanate and potassium niobate using a transmission electron microscope. When domains move in response to electric fields we see a scaling effect where the fine scale domain structure is activated first, followed by larger length-scale patterns. Curvature and tilting of domain walls leads to local uncompensated displacement charge and external fields can interact with these charged walls. In this paper, we posit that the presence of displacement charge on domain walls is important for polarization switching. Charge-neutral domain configurations are in a lower energy state and are harder to switch. We argue that the number of charge-neutral, low energy domain configurations can increase with time. This mechanism provides an intrinsic contribution to ferroelectric fatigue.

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