Optimizing the efficiency of a periodically poled LNOI waveguide using in situ monitoring of the ferroelectric domains

Yunfei Niu; Chen Lin; Xiaoyue Liu; Yan Chen; Xiaopeng Hu; Yong Zhang; Xinlun Cai; Yan-Xiao Gong; Zhenda Xie; Shining Zhu

doi:10.1063/1.5142750

Optimizing the efficiency of a periodically poled LNOI waveguide using in situ monitoring of the ferroelectric domains

Applied Physics Letters ◽

10.1063/1.5142750 ◽

2020 ◽

Vol 116 (10) ◽

pp. 101104 ◽

Cited By ~ 12

Author(s):

Yunfei Niu ◽

Chen Lin ◽

Xiaoyue Liu ◽

Yan Chen ◽

Xiaopeng Hu ◽

...

Keyword(s):

In Situ Monitoring ◽

Periodically Poled ◽

Ferroelectric Domains

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Real-time and in situ monitoring of ferroelectric domains during periodic electric field poling of KTiOPO4

Journal of Applied Physics ◽

10.1063/1.1382830 ◽

2001 ◽

Vol 90 (3) ◽

pp. 1489-1495 ◽

Cited By ~ 31

Author(s):

J. Hellström ◽

R. Clemens ◽

V. Pasiskevicius ◽

H. Karlsson ◽

F. Laurell

Keyword(s):

Electric Field ◽

Real Time ◽

In Situ Monitoring ◽

Ferroelectric Domains ◽

Periodic Electric Field ◽

Electric Field Poling

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Investigation by coherent X-ray section topography of ferroelectric domain behaviour as a function of temperature in periodically poled Rb:KTP

Journal of Applied Crystallography ◽

10.1107/s0021889811012532 ◽

2011 ◽

Vol 44 (3) ◽

pp. 462-466 ◽

Cited By ~ 8

Author(s):

Fabio Masiello ◽

Tamzin A. Lafford ◽

Petra Pernot ◽

José Baruchel ◽

Dean S. Keeble ◽

...

Keyword(s):

Curie Temperature ◽

Ferroelectric Domain ◽

Potassium Titanyl Phosphate ◽

X Ray Diffraction ◽

Periodically Poled ◽

X Ray ◽

Ferroelectric Domains ◽

Diffraction Imaging ◽

Section Topography

The behaviour of ferroelectric domains at high temperatures near the Curie temperature in a periodically poled rubidium-doped potassium titanyl phosphate crystal (Rb:KTP) has been studied by Bragg–Fresnel X-ray diffraction imagingin situusing a compact coherence-preserving furnace. The development and partial disappearance of the inverted domain structure as the temperature increases has been successfully modelled, and is explained by invoking a built-in electric field produced under heating in a low vacuum by out-diffusion of atoms from the sample.

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Investigation of ferroelectrics using conventional and in situ electron microscopy

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100170669 ◽

1994 ◽

Vol 52 ◽

pp. 586-587

Author(s):

V. Saikumar ◽

H. M. Chan ◽

M. P. Harmer

Keyword(s):

Nonvolatile Memory ◽

Ferroelectric Materials ◽

Gate Insulator ◽

Sensors And Actuators ◽

In Situ Electron Microscopy ◽

Ferroelectric Domains ◽

Domain Boundaries ◽

Domain Interactions ◽

Memory Applications

In recent years, there has been a growing interest in the application of ferroelectric thin films for nonvolatile memory applications and as a gate insulator in DRAM structures. In addition, bulk ferroelectric materials are also widely used as components in electronic circuits and find numerous applications in sensors and actuators. To a large extent, the performance of ferroelectric materials are governed by the ferroelectric domains (with dimensions in the micron to sub-micron range) and the switching of domains in the presence of an applied field. Conventional TEM studies of ferroelectric domains structures, in conjunction with in-situ studies of the domain interactions can aid in explaining the behavior of ferroelectric materials, while providing some answers to the mechanisms and processes that influence the performance of ferroelectric materials. A few examples from bulk and thin film ferroelectric materials studied using the TEM are discussed below.Figure 1 shows micrographs of ferroelectric domains obtained from undoped and Fe-doped BaTiO3 single crystals. The domain boundaries have been identified as 90° domains with the boundaries parallel to <011>.

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