Oxygen vacancy control as a strategy to achieve highly reliable hafnia ferroelectrics using oxide electrode
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Recently, hafnia ferroelectrics with two spontaneous polarization states have attracted marked attention for non-volatile, super-steep switching devices, and neuromorphic application due to their fast switching, scalability, and CMOS compatibility.
2015 ◽
Vol 50
(21)
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pp. 6961-6969
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2017 ◽
Vol 32
(3)
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pp. 035018
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2017 ◽
Vol 19
(21)
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pp. 13679-13686
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