Oxygen vacancy control as a strategy to achieve highly reliable hafnia ferroelectrics using oxide electrode

Nanoscale ◽  
2020 ◽  
Vol 12 (16) ◽  
pp. 9024-9031 ◽  
Author(s):  
Youngin Goh ◽  
Sung Hyun Cho ◽  
Sang-Hee Ko Park ◽  
Sanghun Jeon

Recently, hafnia ferroelectrics with two spontaneous polarization states have attracted marked attention for non-volatile, super-steep switching devices, and neuromorphic application due to their fast switching, scalability, and CMOS compatibility.

1998 ◽  
Vol 212 (1) ◽  
pp. 293-300 ◽  
Author(s):  
N. Gough ◽  
M. Hird ◽  
C. J. Newsome ◽  
M. O'neill ◽  
A. K. Samra

2015 ◽  
Vol 50 (21) ◽  
pp. 6961-6969 ◽  
Author(s):  
Firman Mangasa Simanjuntak ◽  
Debashis Panda ◽  
Tsung-Ling Tsai ◽  
Chun-An Lin ◽  
Kung-Hwa Wei ◽  
...  

2016 ◽  
Vol 22 (S3) ◽  
pp. 1568-1569
Author(s):  
William J. Bowman ◽  
Eva Sediva ◽  
Peter Crozier ◽  
Jennifer L.M. Rupp

Nanoscale ◽  
2017 ◽  
Vol 9 (45) ◽  
pp. 17788-17793 ◽  
Author(s):  
Bon-Ryul Koo ◽  
Hyo-Jin Ahn

Mesoporous WO3 films with oxygen vacancy defects fabricated via camphene show multifunctional electrochromic properties of ultrafast switching speeds and high coloration efficiency.


2017 ◽  
Vol 19 (21) ◽  
pp. 13679-13686 ◽  
Author(s):  
Yangyang Du ◽  
Hongkun Cai ◽  
Yunhao Wu ◽  
Zhixue Xing ◽  
Zhenglong Li ◽  
...  

In this work, the influence of oxygen vacancy defect (OVD) in compact titanium oxide (c-TiO2) on the performance of planar perovskite solar cells (p-PSCs) is investigated, and the possible mechanisms are also proposed.


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