scholarly journals Ambipolar transport in narrow bandgap semiconductor InSb nanowires

Nanoscale ◽  
2020 ◽  
Vol 12 (15) ◽  
pp. 8159-8165
Author(s):  
B. Dalelkhan ◽  
D. J. O. Göransson ◽  
C. Thelander ◽  
K. Li ◽  
Y. J. Xing ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Narrow Bandgap ◽  
Ambipolar Transport ◽  
Insb Nanowires

Excellent ambipolar transport characteristics are observed in nanowire field-effect transistors made from narrow bandgap semiconductor InSb nanowires.

Methoxylation of quinoidal bithiophene as a single regioisomer building block for narrow-bandgap conjugated polymers and high-performance organic field-effect transistors

2020 ◽  
Vol 8 (43) ◽  
pp. 15168-15174 ◽  
Author(s):  
Yunlong Sun ◽  
Yunpeng Zhang ◽  
Yang Ran ◽  
Longxian Shi ◽  
Qingsong Zhang ◽  
...  
Keyword(s):  
Conjugated Polymers ◽  
Building Block ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Hole Mobility ◽  
Methoxyl Group ◽  
Organic Field Effect Transistors ◽  
Narrow Bandgap

Methoxyl group was introduced to obtain isomer-free methoxylation quinoidal bithiophene building block. Four polymers displayed narrow bandgap (<1.20 eV) and hole mobility of up to 2.70 cm2 V−1 s−1.

Ambipolar Transport Behaviors in Fullerene Peapod Transistors

2007 ◽  
Vol 121-123 ◽  
pp. 521-524 ◽  
Author(s):  
Ao Guo ◽  
Yun Yi Fu ◽  
Lun Hui Guan ◽  
Zu Jin Shi ◽  
Zhen Nan Gu ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistors ◽  
Large Percentage ◽  
C60 Fullerene ◽  
Electrical Transport Properties ◽  
Ambipolar Behavior ◽  
Ambipolar Transport

The electrical transport properties of C70 and C60 fullerene peapods are investigated. We report the fabrications and performances of field-effect transistors (FETs) based on C70 and C60 fullerene peapods. A large percentage of the fullerene peapod-FETs we fabricated exhibit ambipolar characteristics with high Ion/Ioff ratio at room temperature in air. The origin of ambipolar behavior is qualitatively discussed.

Ambipolar transport in van der Waals black arsenic field effect transistors

2020 ◽  
Vol 31 (40) ◽  
pp. 405203
Author(s):  
Prafful Golani ◽  
Hwanhui Yun ◽  
Supriya Ghosh ◽  
Jiaxuan Wen ◽  
K Andre Mkhoyan ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Van Der Waals ◽  
Ambipolar Transport

Double-wall carbon nanotube field-effect transistors: Ambipolar transport characteristics

2004 ◽  
Vol 84 (13) ◽  
pp. 2412-2414 ◽  
Author(s):  
Takashi Shimada ◽  
Toshiki Sugai ◽  
Yutaka Ohno ◽  
Shigeru Kishimoto ◽  
Takashi Mizutani ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Ambipolar Transport ◽  
Double Wall

Chemical vapor deposition and electrical characterization of sub-10nm diameter InSb nanowires and field-effect transistors

2010 ◽  
Vol 121 (3) ◽  
pp. 397-401 ◽  
Author(s):  
Rajat Kanti Paul ◽  
Miroslav Penchev ◽  
Jiebin Zhong ◽  
Mihrimah Ozkan ◽  
Maziar Ghazinejad ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Electrical Characterization ◽  
Chemical Vapor ◽  
Insb Nanowires

Leveraging the Ambipolar Transport in Polymeric Field-Effect Transistors via Blending with Liquid-Phase Exfoliated Graphene

2014 ◽  
Vol 26 (28) ◽  
pp. 4814-4819 ◽  
Author(s):  
Mirella El Gemayel ◽  
Sébastien Haar ◽  
Fabiola Liscio ◽  
Andrea Schlierf ◽  
Georgian Melinte ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Exfoliated Graphene ◽  
Ambipolar Transport
Sign in / Sign up

Export Citation Format

Share Document