scholarly journals Bias dependent variability of low-frequency noise in single-layer graphene FETs

2020 ◽  
Vol 2 (11) ◽  
pp. 5450-5460
Author(s):  
Nikolaos Mavredakis ◽  
Ramon Garcia Cortadella ◽  
Xavi Illa ◽  
Nathan Schaefer ◽  
Andrea Bonaccini Calia ◽  
...  
Keyword(s):  
Low Frequency ◽  
Single Layer ◽  
Compact Model ◽  
Single Layer Graphene ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Layer Graphene ◽  
First Time

Low-frequency noise variability is for the first time examined in single-layer graphene transistors while an analytical compact model demonstrating an outstanding performance is proposed.

scholarly journals Low-Frequency Noise Parameter Extraction Method for Single-Layer Graphene FETs

2020 ◽  
Vol 67 (5) ◽  
pp. 2093-2099
Author(s):  
Nikolaos Mavredakis ◽  
Wei Wei ◽  
Emiliano Pallecchi ◽  
Dominique Vignaud ◽  
Henri Happy ◽  
...  
Keyword(s):  
Extraction Method ◽  
Low Frequency ◽  
Single Layer ◽  
Parameter Extraction ◽  
Single Layer Graphene ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Parameter ◽  
Layer Graphene

scholarly journals Velocity Saturation Effect on Low Frequency Noise in Short Channel Single Layer Graphene Field Effect Transistors

2019 ◽  
Vol 1 (12) ◽  
pp. 2626-2636 ◽  
Author(s):  
Nikolaos Mavredakis ◽  
Wei Wei ◽  
Emiliano Pallecchi ◽  
Dominique Vignaud ◽  
Henri Happy ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Short Channel ◽  
Velocity Saturation ◽  
Layer Graphene

scholarly journals Understanding the bias dependence of low frequency noise in single layer graphene FETs

Nanoscale ◽  
2018 ◽  
Vol 10 (31) ◽  
pp. 14947-14956 ◽  
Author(s):  
Nikolaos Mavredakis ◽  
Ramon Garcia Cortadella ◽  
Andrea Bonaccini Calia ◽  
Jose A. Garrido ◽  
David Jiménez
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Layer Graphene

This letter investigates the bias-dependent low frequency noise of single layer graphene field-effect transistors.

Effect of Ge-Nanoislands on the Low-Frequency Noise in Si/SiOx/Ge Structures

2013 ◽  
Vol 854 ◽  
pp. 21-27 ◽  
Author(s):  
N.P. Garbar ◽  
Valeriya N. Kudina ◽  
V.S. Lysenko ◽  
S.V. Kondratenko ◽  
Yu.N. Kozyrev
Keyword(s):  
High Surface ◽  
Low Frequency ◽  
Noise Model ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Physical Processes ◽  
Noise Sources ◽  
Noise Component ◽  
First Time ◽  
Noise Models

Low-frequency noise of the structures with Ge-nanoclusters of rather high surface density grown on the oxidized silicon surface is investigated for the first time. It was revealed that the 1/f γ noise, where γ is close to unity, is the typical noise component. Nevertheless, the 1/f γ noise sources were found to be distributed nonuniformly upon the oxidized silicon structure with Ge-nanoclusters. The noise features revealed were analyzed in the framework of widely used noise models. However, the models used appeared to be unsuitable to explain the noise behavior of the structures studied. The physical processes that should be allowed for to develop the appropriate noise model are discussed.

Low Frequency Noise in 4H-SiC MOSFETs

2009 ◽  
Vol 615-617 ◽  
pp. 817-820 ◽  
Author(s):  
Sergey L. Rumyantsev ◽  
Michael S. Shur ◽  
Michael E. Levinshtein ◽  
Pavel A. Ivanov ◽  
John W. Palmour ◽  
...  
Keyword(s):  
Flicker Noise ◽  
Low Frequency ◽  
Drain Current ◽  
Localized States ◽  
Conduction Band Edge ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Channel Mobility ◽  
Strong Inversion ◽  
First Time

Low-frequency noise in 4H-SiC MOSFETs has been measured for the first time. At drain currents varying from deep subthreshold to strong inversion, the 1/f (flicker) noise dominated at frequencies 1 - 105 Hz. The dependence of relative spectral noise density, , on drain current Id (at a constant drain voltage Vd) differs qualitatively from that in Si MOSFETs. In Si MOSFETs, ~ 1/ in strong inversion, whereas tends to saturate in sub-threshold. In 4H-SiC MOSFETs under study, ~ 1/ over the whole range of currents from deep sub-threshold to strong inversion. Similar noise behavior is often observed in poly- or a-Si TFTs. The effective channel mobility in 4H-SiC MOSFETs, 3 - 7 cm2/Vs, is also as low as that in TFTs. Both noise behavior and transport properties of 4H-SiC MOSFETs are explained, analogously to TFTs, by a high density of localized states (bulk and interface) near the conduction band edge in the ion implanted p-well.

NONLINEAR RESPONSE INDUCED STRONG ABSORPTANCE OF GRAPHENE IN THE TERAHERTZ REGIME

2010 ◽  
Vol 24 (21) ◽  
pp. 2243-2249 ◽  
Author(s):  
X. G. XU ◽  
J. C. CAO
Keyword(s):  
Nonlinear Optical ◽  
Low Frequency ◽  
Single Layer ◽  
Optical Response ◽  
Optoelectronic Device ◽  
Nonlinear Optical Response ◽  
Single Layer Graphene ◽  
Dirac Fermions ◽  
Layer Graphene ◽  
Fifth Order

We have calculated the fifth-order nonlinear optical response at experimentally relevant field strengths within the model of massless Dirac fermions by coupling the massless Dirac fermions to the time-dependent electric field quantum mechanically. It demonstrates that the fifth-order nonlinear optical response plays an important role in the contribution to the optical conductivity of pristine single-layer graphene in the low frequency part of the terahertz regime. The nonlinear effect can enhance the optical activity of single-layer graphene in the terahertz regime and significantly decreases the transmittance of graphene in the regime of frequencies from 0.1 to 0.5 THz. These properties of graphene may be used for photonic and optoelectronic device in the terahertz regime.

Curvature analysis of single layer graphene on the basis of extreme low-frequency Raman spectroscopy

2019 ◽  
Vol 114 (16) ◽  
pp. 161907
Author(s):  
Y. Shen ◽  
E. Dai ◽  
X. Liu ◽  
W. Pan ◽  
H. Yang ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Low Frequency ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Layer Graphene ◽  
Curvature Analysis

Low Frequency Noise in 4H-SiC Schottky Diodes Under Forward Bias

2015 ◽  
Vol 821-823 ◽  
pp. 559-562
Author(s):  
Eugenia I. Shabunina ◽  
Michael E. Levinshtein ◽  
Natalia M. Shmidt ◽  
Pavel A. Ivanov ◽  
John W. Palmour ◽  
...  
Keyword(s):  
Main Part ◽  
Schottky Diodes ◽  
Forward Bias ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
High Quality ◽  
Noise Density ◽  
First Time

The 1/f noise has been investigated for the first time at 300 and 77 K in high-quality 4H-SiC Schottky diodes. It is shown that, that at 77 K, the dependence of the spectral noise density on current, SI(I), differs fundamentally between the cases of the current flowing through the main part of the diode area with a comparatively high barrier and the current flowing through the nanosized patches with a comparatively low barrier.

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