P-type doping in 2M-WS2 for a complete phase diagram

2021 ◽  
Author(s):  
Chendong Zhao ◽  
Xiangli Che ◽  
Zhuang Zhang ◽  
Fu Qiang Huang
Keyword(s):  
Phase Diagram ◽  
Transition Metal ◽  
Physical Properties ◽  
Transition Metal Dichalcogenides ◽  
Surface States ◽  
Complete Phase Diagram ◽  
Metal Dichalcogenides ◽  
Topological Surface ◽  
P Type ◽  
New Phase

2M-WS2 as a new phase of transition metal dichalcogenides possesses many novel physical properties, such as superconductivity and topological surface states. The effect of n-type doping on the superconductivity of...

Valence-Mending Passivation of Si(100) Surface: Principle, Practice and Application

2015 ◽  
Vol 242 ◽  
pp. 51-60 ◽  
Author(s):  
Meng Tao
Keyword(s):  
Transition Metal ◽  
Schottky Barrier Height ◽  
New Records ◽  
Transition Metal Dichalcogenides ◽  
Surface States ◽  
Atomic Layer ◽  
Schottky Barriers ◽  
Photovoltaic Devices ◽  
Dangling Bonds ◽  
Metal Dichalcogenides

Surface states have hindered and degraded many semiconductor devices since the Bardeen era. Surface states originate from dangling bonds on the surface. This paper discusses a generic solution to surface states, i.e. valence-mending passivation. For the Si (100) surface, a single atomic layer of valence-mending sulfur, selenium or tellurium can terminate ~99% of the dangling bonds, while group VII fluorine or chlorine can terminate the remaining 1%. Valence-mending passivation of Si (100) has been demonstrated using CVD, MBE and solution passivation. The keys to valence-mending passivation include an atomically-clean Si (100) surface for passivation and precisely one monolayer of valence-mending atoms on the surface. The passivated surface exhibits unprecedented properties. Electronically the Schottky barrier height between various metals and valence-mended Si (100) now follows more closely the Mott-Schottky theory. With metals of extreme workfunctions, new records for low and high Schottky barriers are created on Si (100). The highest barrier so far is 1.14 eV, i.e. a larger-than-bandgap barrier, and the lowest barrier is below 0.08 eV and potentially negative. Chemically silicidation between metal and valence-mended Si (100) is suppressed up to 500 °C, and the thermally-stable record Schottky barriers enable their applications in nanoelectronic, optoelectronic and photovoltaic devices. Another application is transition metal dichalcogenides. Valence-mended Si (100) is an ideal starting surface for growth of dichalcogenides, as it provides only van der Waals bonding to the dichalcogenide.

Bidirectional doping of two-dimensional thin-layer transition metal dichalcogenides by soft ammonia plasma

Nanoscale ◽  
2021 ◽  
Author(s):  
Pu Tan ◽  
Kaixuan Ding ◽  
Xiumei Zhang ◽  
Zhenhua Ni ◽  
Kostya Ostrikov ◽  
...  
Keyword(s):  
Transition Metal ◽  
Thin Layer ◽  
Band Gap ◽  
Transition Metal Dichalcogenides ◽  
High Mobility ◽  
Two Dimensional ◽  
Layer Transition ◽  
Microelectronic Devices ◽  
Metal Dichalcogenides ◽  
P Type

Because of suitable band gap and high mobility, two-dimensional transition metal dichalcogenides (TMDs) materials are promising in future microelectronic devices. However, controllable p-type and n-type doping of TMDs is still...

n- and p-Type Doping Phenomenon by Artificial DNA and M-DNA on Two-Dimensional Transition Metal Dichalcogenides

ACS Nano ◽  
2014 ◽  
Vol 8 (11) ◽  
pp. 11603-11613 ◽  
Author(s):  
Hyung-Youl Park ◽  
Sreekantha Reddy Dugasani ◽  
Dong-Ho Kang ◽  
Jeaho Jeon ◽  
Sung Kyu Jang ◽  
...  
Keyword(s):  
Transition Metal ◽  
Transition Metal Dichalcogenides ◽  
Two Dimensional ◽  
Artificial Dna ◽  
Metal Dichalcogenides ◽  
P Type

scholarly journals Tuning the physical properties of ultrathin transition-metal dichalcogenides via strain engineering

RSC Advances ◽  
2020 ◽  
Vol 10 (65) ◽  
pp. 39455-39467
Author(s):  
Yalan Yan ◽  
Shuang Ding ◽  
Xiaonan Wu ◽  
Jian Zhu ◽  
Dengman Feng ◽  
...  
Keyword(s):  
Transition Metal ◽  
Physical Properties ◽  
2D Materials ◽  
Transition Metal Dichalcogenides ◽  
Strain Engineering ◽  
Two Dimensional ◽  
Photoelectric Properties ◽  
Metal Dichalcogenides

Transition-metal dichalcogenides (TMDs) have become one of the recent frontiers and focuses in two-dimensional (2D) materials fields thanks to their superior electronic, optical, and photoelectric properties.

Fabry-Perot Cavity Enhanced Three-photon Luminescence of Atomically Thin Platinum Diselenide

Nanoscale ◽  
2021 ◽  
Author(s):  
Jing Han ◽  
Yingwei Wang ◽  
Jun He ◽  
Hua Lu ◽  
Xiangping Li ◽  
...  
Keyword(s):  
Transition Metal ◽  
Physical Properties ◽  
Technology Development ◽  
Transition Metal Dichalcogenides ◽  
Two Dimensional ◽  
Two Dimensional Materials ◽  
Fabry Perot ◽  
Metal Dichalcogenides ◽  
Fundamental Research ◽  
Thin Platinum

Two-dimensional materials, such as transition metal dichalcogenides (TMDs) exhibit intriguing physical properties that lead to both fundamental research and technology development. The recently emerged platinum diselenide (PtSe2), as a new...

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