Synthetic applications of type II intramolecular cycloadditions

2020 ◽  
Vol 49 (19) ◽  
pp. 7015-7043
Author(s):  
Long Min ◽  
Ya-Jian Hu ◽  
Jian-Hong Fan ◽  
Wen Zhang ◽  
Chuang-Chuang Li
Keyword(s):  
Type Ii ◽  
Ring Systems ◽  
Intramolecular Cycloadditions ◽  
P Type ◽  
Powerful Strategy

Type II intramolecular cycloadditions ([4+2], [4+3], [4+4] and [5+2]) have emerged recently as an efficient and powerful strategy for the construction of bridged ring systems.

scholarly journals Regioselective activation of benzocyclobutenones and dienamides lead to anti-Bredt bridged-ring systems by a [4+4] cycloaddition

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Jianyu Zhang ◽  
Xi Wang ◽  
Tao Xu
Keyword(s):  
Type Ii ◽  
Ring Systems ◽  
Hydride Shift

AbstractTo the best of our knowledge, bridgehead carbon benzofused-bridged ring systems have previously not been accessible to the synthetic community. Here, we describe a formal type-II [4 + 4] cycloaddition approach that provides fully sp2-carbon embedded anti-Bredt bicyclo[5.3.1] skeletons through the Rh-catalyzed C1–C8 activation of benzocyclobutenones (BCBs) and their coupling with pedant dienamides. Variously substituted dienamides have been coupled with BCBs to provide a range of complex bicyclo[5.3.1] scaffolds (>20 examples, up to 89% yield). The bridged rings were further converted to polyfused hydroquinoline-containing tetracycles via a serendipitously discovered transannular 1,5-hydride shift/Prins-like cyclization/Schmidt rearrangement cascade.

Electrochemical preparation of vertically aligned, hollow CdSe nanotubes and their p–n junction hybrids with electrodeposited Cu2O

Nanoscale ◽  
2014 ◽  
Vol 6 (15) ◽  
pp. 9148-9156 ◽  
Author(s):  
Joyashish Debgupta ◽  
Ramireddy Devarapalli ◽  
Shakeelur Rahman ◽  
Manjusha V. Shelke ◽  
Vijayamohanan K. Pillai
Keyword(s):  
Charge Carriers ◽  
Type Ii ◽  
Electrochemical Preparation ◽  
Enhanced Absorption ◽  
Absorption Of Light ◽  
Vertically Aligned ◽  
P Type

Heterojunction (type II) of self standing, vertically aligned CdSe NTs (n-type) with electrodeposited Cu2O (p-type) exhibits excellent photoresponse, resulting from enhanced absorption of light and faster transport of photogenerated charge carriers by CdSe NTs.

Synthesis of Tetracyclic Indole-Containing Ring Systems by Intramolecular Cycloadditions of Azomethine Ylides.

ChemInform ◽  
2007 ◽  
Vol 38 (17) ◽  
Author(s):  
Iain Coldham ◽  
Benjamin C. Dobson ◽  
Andrew I. Franklin ◽  
Stephen R. Fletcher
Keyword(s):  
Azomethine Ylides ◽  
Ring Systems ◽  
Intramolecular Cycloadditions

Type II Dislocation Loops and their Effect on Strain in Ion Implanted Silicon as Studied by High Resolution X-ray Diffraction

1995 ◽  
Vol 378 ◽  
Author(s):  
R. H. Thompson ◽  
V. Krishnamoorthy ◽  
J. Liu ◽  
K. S. Jones
Keyword(s):  
High Resolution ◽  
Type Ii ◽  
Dislocation Loops ◽  
X Ray Diffraction ◽  
Empirical Constant ◽  
Plan View ◽  
X Ray ◽  
Transmission Electron ◽  
Measured Strain ◽  
P Type

AbstractP-type (100) silicon wafers were implanted with 28Si+ ions at an energy of 50 keV and to doses of 1 × 1015, 5 × 1015 and 1 × 1016 cm−2, respectively, and annealed in a N2 ambient at temperatures ranging from 700°C to 1000°C for times ranging from 15 minutes to 16 hours. The resulting microstructure consisted of varying distributions of Type II end of range dislocation loops. The size distribution of these loops was quantified using plan-view transmission electron microscopy and the strain arising from these loops was investigated using high resolution x-ray diffraction. The measured strain values were found to be constant in the loop coarsening regime wherein the number of atoms bound by the loops remained a constant. Therefore, an empirical constant of 7.7 × 10−12 interstitial/ppm of strain was evaluated to relate the number of interstitials bound by these dislocation loops and the strain. This value was used successfully in estimating the number of interstitials bound by loops at the various doses studied provided the annealing conditions were such that the loop microstructure was in the coarsening or dissolution regime.

P-Type II-VI Compound Semiconductor Thin Films Grown by Pulsed Laser Deposition

1995 ◽  
Vol 388 ◽  
Author(s):  
W. P. Shen ◽  
H. S. Kwok
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Type Ii ◽  
New Approach ◽  
Li Doping ◽  
Semiconductor Thin Films ◽  
In Doping ◽  
P Type

AbstractIn this paper the results on p-type ZnS, ZnSe, CdS and CdSe thin films grown by pulsed laser deposition will be discussed. these films were deposited on GaAs substrates. Li-doping has been shown to be effective in producing p-type II-VI thin films, while in-doping is excellent for n-type CdS and CdSe thin films. No post-annealing process was used. these preliminary results suggest a possible new approach through pulsed laser deposition to solve the doping problem of II-VI compound semiconductors.

Enhancing electronic and optical properties of monolayer MoSe2via a MoSe2/blue phosphorene heterobilayer

2019 ◽  
Vol 21 (28) ◽  
pp. 15760-15766 ◽  
Author(s):  
Huabing Shu ◽  
Ying Wang ◽  
Minglei Sun
Keyword(s):  
Optical Properties ◽  
Charge Carriers ◽  
Type Ii ◽  
Electronic And Optical Properties ◽  
Effective Separation ◽  
P Type ◽  
Blue Phosphorene

Type-II heterostructures are appealing for application in optoelectronics due to their effective separation of photogenerated charge carriers.

Type II Intramolecular [5+2] Cycloaddition: Facile Synthesis of Highly Functionalized Bridged Ring Systems

2014 ◽  
Vol 127 (6) ◽  
pp. 1774-1778 ◽  
Author(s):  
Guangjian Mei ◽  
Xin Liu ◽  
Chuang Qiao ◽  
Wei Chen ◽  
Chuang-chuang Li
Keyword(s):  
Type Ii ◽  
Facile Synthesis ◽  
Ring Systems

Type II Intramolecular [5+2] Cycloaddition: Facile Synthesis of Highly Functionalized Bridged Ring Systems

2014 ◽  
Vol 54 (6) ◽  
pp. 1754-1758 ◽  
Author(s):  
Guangjian Mei ◽  
Xin Liu ◽  
Chuang Qiao ◽  
Wei Chen ◽  
Chuang-chuang Li
Keyword(s):  
Type Ii ◽  
Facile Synthesis ◽  
Ring Systems

Type-II α-In2S3/In2O3 nanowire heterostructures: evidence of enhanced photo-induced charge separation efficiency

RSC Advances ◽  
2016 ◽  
Vol 6 (15) ◽  
pp. 12561-12570 ◽  
Author(s):  
Li-Chia Tien ◽  
Jhih-Lin Shih
Keyword(s):  
Charge Separation ◽  
Separation Efficiency ◽  
Life Time ◽  
Type Ii ◽  
Nanowire Heterostructures ◽  
Visible Light Driven ◽  
Charge Separation Efficiency ◽  
Induced Charge ◽  
P Type ◽  
Carrier Life Time

Type-II α-In2S3/In2O3 nanowire heterostructures exhibit significant photo-induced carrier life time improvement and visible-light-driven photocatalytic activity.

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