Ideal Strength and Strain Engineering of Rashba Effect in Two-Dimensional BiTeBr

Author(s):  
Wei Yang ◽  
Zhizi Guan ◽  
Hailong Wang ◽  
Junwen Li

Achieving large and tunable Rashba effect is of great significance for advancing both the understanding and applications of spintronics. Two-dimensional nanostructures that are expected to sustain large mechanical deformation provide...

1967 ◽  
Vol 40 (5) ◽  
pp. 1526-1528
Author(s):  
Ed Vanzo

Abstract Anionically prepared block copolymers of butadiene and styrene exhibit solution properties which result from a two dimensional ordering of the polymer molecules. The most notable of these properties is the iridescent colors of toluene solutions which are dependent on concentration and abruptly change on mechanical deformation. Electron micrographs of the surface of cast films indicate that the ordered structure is retained to some degree in the solid state.


2021 ◽  
Author(s):  
Thi Nga Do ◽  
Son-Tung Nguyen ◽  
Khang Pham

In this work, by means of the first-principles calculations, we investigate the structural and electronic properties of a two-dimensional ZnGeN2 monolayer as well as the effects of strains and electric...


2020 ◽  
Vol 8 (15) ◽  
pp. 5143-5149
Author(s):  
Chang Liu ◽  
Heng Gao ◽  
Yongchang Li ◽  
Kangying Wang ◽  
Lee A. Burton ◽  
...  

Designing an electric-field controlled Rashba spin FET on two-dimensional GeTe.


Nanomaterials ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 446
Author(s):  
Mahdi Faghihnasiri ◽  
Aidin Ahmadi ◽  
Samaneh Alvankar Golpayegan ◽  
Saeideh Garosi Sharifabadi ◽  
Ali Ramazani

We utilize first principles calculations to investigate the mechanical properties and strain-dependent electronic band structure of the hexagonal phase of two dimensional (2D) HfS2. We apply three different deformation modes within −10% to 30% range of two uniaxial (D1, D2) and one biaxial (D3) strains along x, y, and x-y directions, respectively. The harmonic regions are identified in each deformation mode. The ultimate stress for D1, D2, and D3 deformations is obtained as 0.037, 0.038 and 0.044 (eV/Ang3), respectively. Additionally, the ultimate strain for D1, D2, and D3 deformation is obtained as 17.2, 17.51, and 21.17 (eV/Ang3), respectively. In the next step, we determine the second-, third-, and fourth-order elastic constants and the electronic properties of both unstrained and strained HfS2 monolayers are investigated. Our findings reveal that the unstrained HfS2 monolayer is a semiconductor with an indirect bandgap of 1.12 eV. We then tune the bandgap of HfS2 with strain engineering. Our findings reveal how to tune and control the electronic properties of HfS2 monolayer with strain engineering, and make it a potential candidate for a wide range of applications including photovoltaics, electronics and optoelectronics.


2017 ◽  
Vol 96 (7) ◽  
Author(s):  
S. Saberi-Pouya ◽  
T. Vazifehshenas ◽  
T. Salavati-fard ◽  
M. Farmanbar ◽  
F. M. Peeters

Nanoscale ◽  
2019 ◽  
Vol 11 (33) ◽  
pp. 15472-15478 ◽  
Author(s):  
Donghai Wu ◽  
Baocheng Yang ◽  
Houyang Chen ◽  
Eli Ruckenstein

Tensile and compressive strains are effective ways for charge redistribution to reactivate adsorption sites on electrode materials.


Nanoscale ◽  
2017 ◽  
Vol 9 (21) ◽  
pp. 7055-7062 ◽  
Author(s):  
Zhe Shi ◽  
Chandra Veer Singh

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