Dynamics of the reaction CH2I + O2 probed via infrared emission of CO, CO2, OH and H2CO

2020 ◽  
Vol 22 (31) ◽  
pp. 17540-17553
Author(s):  
Ting-Yu Chen ◽  
Yuan-Pern Lee
Keyword(s):  
Infrared Emission ◽  
Secondary Reaction ◽  
Vibrationally Excited ◽  
Ir Emission

IR emission of OH, CO, CO2, and H2CO from CH2I + O2 was recorded with a step-scan FTIR; possible decomposition routes from HCOOH* and methylene bis(oxy) were identified. The secondary reaction HCO + O2 produces highly vibrationally excited CO.

scholarly journals Infrared Emission from Barred Spiral Galaxies

1996 ◽  
Vol 157 ◽  
pp. 54-62
Author(s):  
Tim G. Hawarden ◽  
J. H. Huang ◽  
Q. S. Gu
Keyword(s):  
Star Formation ◽  
Spiral Galaxies ◽  
Star Formation Rate ◽  
Formation Rate ◽  
Infrared Emission ◽  
Stellar Radiation ◽  
The Galaxy ◽  
Barred Spiral Galaxies ◽  
Star Formation Regions ◽  
Ir Emission

AbstractAmongst relatively undisturbed spiral galaxies of type ≤ Sc barred morphology is unquestionably associated with powerful mid- and Far-IR emission. On the other hand, even amongst early type galaxies, those with LFIR/LB < 1/3 exhibit no association of high relative FIR luminosity with barred morphology, but some association of IR colors resembling those of star formation regions (SFRs). Amongst systems with LFIR/LB < 0.1 this ratio may be anti-correlated with barredness. It appears that enhanced IR emission from those galaxies whose star formation rate is currently elevated by the the bar translates them into the group with higher FIR-to-optical luminosity ratios. Depletion of extended nearnuclear gas and dust, once the bar has swept up the currently-available supplies, may reduce the fraction of the background stellar radiation field which can be converted to FIR radiation in the inner, most luminous parts of the galaxy. Thus, after the starburst has subsided, such galaxies may be less FIR-luminous than unbarred systems. Several uncertainties remain: it is still not clear whether barred morphology is a necessary condition for the generation of a starburst in an otherwise undisturbed galaxy, while evidence as to the effect of differing bar strengths is conflicting.

scholarly journals Infrared Emission at High Galactic Latitude

1990 ◽  
Vol 139 ◽  
pp. 139-148
Author(s):  
F. Boulanger
Keyword(s):  
Interstellar Dust ◽  
Optical Emission ◽  
Infrared Emission ◽  
Infrared Astronomy ◽  
Molecular Gas ◽  
Galactic Latitude ◽  
High Galactic Latitude ◽  
Present Evidence ◽  
Galactic Emission ◽  
Ir Emission

Results obtained with the Infrared Astronomy Satellite (IRAS) on the IR emission at high galactic latitude are reviewed. We present evidence for the detection of galactic emission at 12, 25, 60, and 100 μm. We describe the morphology of this emission and summarize work on the correlation of IR cirrus with H I, CO, and optical emission. We discuss the contribution of the neutral atomic, ionized, and molecular gas to the total IR emission and the contribution of different components of interstellar dust to the emission seen at different wavelengths.

Broadband near-infrared emission from Bi-doped aluminosilicate glasses

2007 ◽  
Vol 22 (6) ◽  
pp. 1435-1438 ◽  
Author(s):  
Shifeng Zhou ◽  
Gaofeng Feng ◽  
Jiaxing Bao ◽  
Hucheng Yang ◽  
Jianrong Qiu
Keyword(s):  
Near Infrared ◽  
Optical Amplifiers ◽  
Wavelength Region ◽  
Infrared Emission ◽  
Sodium Potassium ◽  
Aluminosilicate Glasses ◽  
Telecommunication Wavelength ◽  
Ir Emission ◽  
Near Infrared Emission ◽  
Potassium Aluminosilicate

Bi-doped sodium–potassium aluminosilicate glasses were synthesized and characterized. Broadband near-infrared (IR) emission covered the whole telecommunication wavelength region, with a maximum peak at about 1250 nm, a full width at half-maximum of about 370 nm, and a lifetime longer than 420 μs. The present glasses are potential materials for tunable lasers and optical amplifiers. The decrease of active Bi center concentration with the increase of Na2O content and the addition of CeO2are first reported here, and the IR emission center in sodium–potassium aluminosilicate glasses might be ascribed to low-valence-state bismuth, most probably, Bi+.

THE HYDROGEN–CHLORINE SYSTEM IN THE MM PRESSURE RANGE: I. ENERGY DISTRIBUTION AMONG VIBRATIONALLY EXCITED STATES

1964 ◽  
Vol 42 (10) ◽  
pp. 2176-2192 ◽  
Author(s):  
F. D. Findlay ◽  
J. C. Polanyi
Keyword(s):  
Excited States ◽  
Rotational Temperature ◽  
Relative Rate ◽  
Infrared Emission ◽  
Vibrational States ◽  
Vibrationally Excited ◽  
Experimental Conditions ◽  
Reduced Pressure ◽  
A Chain ◽  
First Time

When atomic plus molecular hydrogen coming from a Wood's discharge tube are mixed with molecular chlorine, infrared emission is observed (1). At low reagent pressures, ~10−2 mm Hg, this emission can be related to the relative rate of the reaction H + Cl2 → HCl†ν + Cl proceeding to form HCl in vibrationally excited states ν = 1–6, of the ground electronic state. In the present work this system has been investigated for the first time at ~100 × the reagent pressure (~1 mm Hg). The reaction was shown to proceed by a chain mechanism. The translational–rotational temperature was 1300 ± 100 °K under the experimental conditions normally used. The vibrational distribution was notable for the presence of vibrators in levels ν = 7 and 8, which are respectively 4 and 10 kcal higher in energy than the exothermicity of the H + Cl2 reaction. The population in these levels appeared to be related to that in the levels with [Formula: see text]; it was proposed that vibrational–vibrational exchange among these lower levels was responsible for populating the higher ones. A simple model yielded a collision efficiency for HCl†ν=1 + HCl†ν=6 → HCl†ν=7 + HCl†ν=0, of Z1,6t = 6 × 103 collisions per transfer. Addition of HCl to the reaction mixture brought about a redistribution among vibrationally excited states indicative of a fast vibrational transfer, HClν=0 + HCl†ν=2 → 2 HCl†ν=1.At reduced pressure of HCl† the stationary-state distribution among higher vibrational states approximated closely to that observed at 10−2 mm Hg total pressure (where collisional deactivation is insignificant), suggesting that collisional deactivation was not of major importance even at the pressure used in the present work. In order to account for the high translational–rotational temperature, in the absence of substantial vibrational deactivation, it was necessary to suppose that the greater part of the energy liberated by the reaction H + Cl2 went directly into translational and rotational motion of the products.

Infrared Emission Spectra of Solids

1972 ◽  
Vol 26 (6) ◽  
pp. 593-599 ◽  
Author(s):  
Gianfranco Fabbri ◽  
Pietro Baraldi
Keyword(s):  
Layer Thickness ◽  
Absorption Spectra ◽  
Simple Technique ◽  
Emission Spectra ◽  
Infrared Emission ◽  
Ir Emission ◽  
Temperature Sample

A simple technique for recording ir emission spectra on nonmodified spectrophotometers is discussed. The effects of support, temperature, sample fineness, and layer thickness on both band intensities and band resolution are stated. Some examples of emission spectra in comparison with the absorption spectra of the same compounds are given.

Infrared Emission Properties of Ho Doped KPb2Cl5

2008 ◽  
Vol 1111 ◽  
Author(s):  
Uwe Hömmerich ◽  
Olusola Oyebola ◽  
Ei Brown ◽  
Sudhir B. Trivedi ◽  
Althea G. Bluiett ◽  
...  
Keyword(s):  
Decay Time ◽  
Room Temperature ◽  
Emission Cross Section ◽  
Optical Excitation ◽  
Infrared Emission ◽  
Gain Medium ◽  
Laser Applications ◽  
Potential Applications ◽  
Directional Freezing ◽  
Ir Emission

AbstractWe report on the optical properties of Ho doped KPb2Cl5 (Ho: KPC) for potential applications as an infrared (IR) solid-state gain medium. The investigated crystal was synthesized from commercial starting materials of PbCl2, KCl, and HoCl3 followed by several purification steps including directional freezing, zone-refinement, and chlorination. The Ho: KPC crystal was subsequently grown by Bridgman technique. Following optical excitation at 885 nm, several IR emission bands were observed at room-temperature with average wavelengths at 1.07, 1.18, 1.35, 1.65, 2.00, 2.94, and 3.96 μm. The emission at 3.96 μm originated from the 5I5 -> 5I6 transitions of Ho3+ and was further evaluated for possible applications in mid-IR lasers. The decay time of the 5I5 excited state was measured to be 5.0 ms at room-temperature. The long 5I5 lifetime is favorable for laser applications and indicates that non-radiative multi-phonon relaxations are small in Ho: KPC. Based on a Judd-Ofelt analysis, the emission quantum efficiency was determined to be near unity resulting in a peak emission cross-section of 0.62×10-20 cm2 at 3.96 μm. A drawback for laser applications is the long decay time of the lower 5I6 state with a value of 4.8 ms . Since the 3.96 μm transition terminates in the 5I6 level, its long lifetime will lead to population bottlenecking, which limits possible mid-IR lasing to pulsed and quasi-cw operation.

Features of Infrared Emission Spectra of Organic Compounds

1984 ◽  
Vol 38 (5) ◽  
pp. 668-674 ◽  
Author(s):  
Pietro Baraldi ◽  
Gianfranco Fabbri
Keyword(s):  
Absorption Spectra ◽  
Organic Compounds ◽  
Optical Thickness ◽  
Crystal Size ◽  
Emission Spectra ◽  
Infrared Emission ◽  
Band Intensity ◽  
Optimum Range ◽  
Experimental Parameters ◽  
Ir Emission

The IR emission spectra of a number of organic compounds have been examined in comparison with absorption spectra The behavior of band intensity as a function of some experimental parameters has been considered in order to find the optimum range of the parameters for the recording of the emission spectra It is shown that the spectra recorded on samples with low optical thickness and low crystal size are very close to absorption spectra Specific fields of application can be found where emission techniques exhibit some advantages in comparison with absorption ones

AN IMPROVED TECHNIQUE FOR THE OBSERVATION OF INFRARED CHEMILUMINESCENCE: RESOLVED INFRARED EMISSION OF OH ARISING FROM THE SYSTEM H + O2

1960 ◽  
Vol 38 (10) ◽  
pp. 1742-1755 ◽  
Author(s):  
P. E. Charters ◽  
J. C. Polanyi
Keyword(s):  
Infrared Spectrum ◽  
Electronic State ◽  
Vibrational Temperature ◽  
Infrared Emission ◽  
Multiple Reflection ◽  
Ground Electronic State ◽  
Oh Radicals ◽  
Vibrationally Excited ◽  
Improved Technique ◽  
First Time

A multiple reflection apparatus for the observation of infrared chemiluminescence is described. By means of this apparatus infrared emission from the system H + O2 has been identified as being due to vibrationally excited OH radicals in levels v = 1, 2, and 3 of the ground electronic state. The resolved infrared spectrum of the OH fundamental has been observed for the first time without interference from other emission. The most likely source of excited OH is the reaction H + HO2 → OH† + OH. The vibrational 'temperature' of OH† (vibrationally excited OH in its ground electronic state) in our system is in the region of TV = 2240 °K. These findings are discussed in relation to Krassovsky's suggestion that reaction between H and O2 could account for the Meinel hydroxyl bands in the night sky.

MOVPE GROWTH OF THE InP BASED MID-IR EMISSION QUANTUM DOT STRUCTURES

2013 ◽  
Vol 01 (02) ◽  
pp. 1350002
Author(s):  
XIAOHONG TANG ◽  
ZONGYOU YIN ◽  
BAOLIN ZHANG
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Infrared Emission ◽  
Emission Wavelength ◽  
Growth Method ◽  
Metal Organic ◽  
Size Uniformity ◽  
Dot Density ◽  
Inas Quantum Dot ◽  
Ir Emission

In this paper, semiconductor quantum dot structures for mid-infrared emission were self-assembled on InP substrate by using metal–organic vapor phase epitaxy growth. The InAs quantum dots grown at different conditions have been investigated. To improve the grown quantum dot's shape, the dot density and the dot size uniformity, a two-step growth method has been used and investigated. By changing the composition of the In x Ga 1-x As matrix layer of the InAs / In x Ga 1-x As / InP quantum dot structure, emission wavelength of the InAs quantum dot structure has been extended to the longest > 2.35 μm measured at 77 K. For the narrower bandgap semiconductor InAsSb quantum dots, the emission wavelength was measured at > 2.8 μm.

Rate constants for collisional quenching of NO (A2Σ+, v = 0) by He, Ne, Ar, Kr, and Xe, and infrared emission accompanying rare gas and impurity quenching

2014 ◽  
Vol 16 (22) ◽  
pp. 11047-11053 ◽  
Author(s):  
Julian Few ◽  
Gus Hancock
Keyword(s):  
Rate Constants ◽  
Infrared Emission ◽  
Rare Gas ◽  
Collisional Quenching ◽  
Rare Gases ◽  
Vibrationally Excited ◽  
Potential Contaminant

Rates of quenching of NO (A2Σ+, v = 0) have been measured for the rare gases, and infrared emission used to observe vibrationally excited quenching products. The figure shows emission following quenching by O2, a potential contaminant.

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