Chemical potentials of electric double layers at metal–electrolyte interfaces: dependence on electrolyte concentration and electrode materials, and application to field-effect transistors

2020 ◽  
Vol 22 (22) ◽  
pp. 12395-12402
Author(s):  
Chihiro Nanjo ◽  
Daisuke Yokogawa ◽  
Michio M. Matsushita ◽  
Kunio Awaga
Keyword(s):  
Field Effect ◽  
Electrode Materials ◽  
Electrolyte Concentration ◽  
Field Effect Transistors ◽  
Double Layers ◽  
Electric Double Layers ◽  
Chemical Potentials

We experimentally and theoretically reveal the chemical potentials of electric double layers at metal–electrolyte interfaces for carrier injections.

High-Density Carrier Accumulation in ZnO Field-Effect Transistors Gated by Electric Double Layers of Ionic Liquids

2009 ◽  
Vol 19 (7) ◽  
pp. 1046-1053 ◽  
Author(s):  
Hongtao Yuan ◽  
Hidekazu Shimotani ◽  
Atsushi Tsukazaki ◽  
Akira Ohtomo ◽  
Masashi Kawasaki ◽  
...  
Keyword(s):  
Ionic Liquids ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Density ◽  
Double Layers ◽  
Electric Double Layers

Selecting electrode materials for monolayer ReS2 with an Ohmic contact

2018 ◽  
Vol 6 (25) ◽  
pp. 6764-6770 ◽  
Author(s):  
Nan Gao ◽  
Si Zhou ◽  
Nanshu Liu ◽  
Yizhen Bai ◽  
Jijun Zhao
Keyword(s):  
Ohmic Contact ◽  
Field Effect ◽  
Electrode Materials ◽  
Field Effect Transistors ◽  
Schottky Barriers

Field effect transistors of monolayer ReS2 with various electrodes and their Schottky barriers for electron and hole carriers.

Three-Dimensional Organic Field-Effect Transistors: Charge Accumulation in their Vertical Semiconductor Channels

2009 ◽  
Vol 1154 ◽  
Author(s):  
M. Uno ◽  
I. Doi ◽  
K. Takimiya ◽  
Jun Takeya
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Three Dimensional ◽  
High Mobility ◽  
Double Layers ◽  
Organic Field Effect Transistors ◽  
Output Current ◽  
Active Matrix ◽  
High Output

AbstractThree-dimensional organic field-effect transistors are developed with multiple vertical channels of organic semiconductors to gain high output current and high on-off ratio. High-mobility and air-stable dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene thin films deposited on horizontally elongated vertical sidewalls have realized unprecedented high output current per area of 2.6 A/cm2 with the application of drain voltage -10 V and gate voltage -20 V. The on-off ratio is as high as 2.7×106. Carrier mobility of the organic semiconductor deposited on the vertical sidewalls is typically 0.30 cm2/Vs. The structure is built also on plastic substrates, where still considerable current modulation is preserved with high output current per area of 70 mA/cm2 and with high on-off ratio of 8.7×106. The performance exceeds practical requirements for applications in driving organic light-emitting diodes in active-matrix displays. The technique of gating with electric double layers of ionic liquid is also introduced to the three-dimensional transistor structure.

Study of Solid/liquid Interfaces in Organic Field-effect Transistors with Ionic Liquids

2009 ◽  
Vol 1154 ◽  
Author(s):  
Shimpei Ono ◽  
Kazumoto Miwa ◽  
Shiro Seki ◽  
Jun Takeya
Keyword(s):  
Ionic Liquid ◽  
Field Effect ◽  
Carrier Mobility ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Double Layers ◽  
Liquid Interfaces ◽  
Organic Thin Film ◽  
Solid Liquid

AbstractWe report high-mobility rubrene single-crystal field-effect transistors with ionic-liquid electrolytes used for gate dielectric layers. As the result of fast ionic diffusion to form electric double layers, their capacitances remain more than 1.0 μF/cm2 even at 0.1 MHz. With high carrier mobility of 9.5 cm2/Vs in the rubrene crystal, pronounced current amplification is achieved at the gate voltage of only 0.2 V, which is two orders of magnitude smaller than that necessary for organic thin-film transistors with dielectric gate insulators. The results demonstrate that the ionic-liquid/organic semiconductor interfaces are suited to realize low-power and fast-switching field-effect transistors without sacrificing carrier mobility in forming the solid/liquid interfaces.

Low-power and Fast-switching Organic Field-effect Transistors with Ionic Liquids

2008 ◽  
Vol 1082 ◽  
Author(s):  
S. Ono ◽  
S. Seki ◽  
R. Hirahara ◽  
Y. Tominari ◽  
J. Takeya
Keyword(s):  
Ionic Liquid ◽  
Low Power ◽  
Field Effect ◽  
Carrier Mobility ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Double Layers ◽  
Organic Thin Film ◽  
Fast Switching

ABSTRACTWe report high-mobility rubrene single-crystal field-effect transistors with ionic-liquid electrolytes used for gate dielectric layers. As the result of fast ionic diffusion to form electric double layers, their capacitances remain more than 10 μF/cm2 even at 0.1 MHz. With high carrier mobility of 1.2 cm2/Vs in the rubrene crystal, pronounced current amplification is achieved at the gate voltage of only 0.2 V, which is two orders of magnitude smaller than that necessary for organic thin-film transistors with dielectric gate insulators. The results demonstrate that the ionic-liquid/organic semiconductor interfaces are suited to realize low-power and fast-switching field-effect transistors without sacrificing carrier mobility in forming the solid/liquid interfaces.

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