Selecting electrode materials for monolayer ReS2 with an Ohmic contact

2018 ◽  
Vol 6 (25) ◽  
pp. 6764-6770 ◽  
Author(s):  
Nan Gao ◽  
Si Zhou ◽  
Nanshu Liu ◽  
Yizhen Bai ◽  
Jijun Zhao
Keyword(s):  
Ohmic Contact ◽  
Field Effect ◽  
Electrode Materials ◽  
Field Effect Transistors ◽  
Schottky Barriers

Field effect transistors of monolayer ReS2 with various electrodes and their Schottky barriers for electron and hole carriers.

scholarly journals Ultralow Schottky Barriers in Hexagonal Boron Nitride-Encapsulated Monolayer WSe2 Tunnel Field-Effect Transistors

2020 ◽  
Vol 12 (16) ◽  
pp. 18667-18673 ◽  
Author(s):  
Gaurav Pande ◽  
Jyun-Yan Siao ◽  
Wei-Liang Chen ◽  
Chien-Ju Lee ◽  
Raman Sankar ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Hexagonal Boron Nitride ◽  
Schottky Barriers

Low Ohmic Contact Resistancem-Plane AlGaN/GaN Heterojunction Field-Effect Transistors with Enhancement-Mode Operations

2010 ◽  
Vol 3 (10) ◽  
pp. 101002 ◽  
Author(s):  
Tetsuya Fujiwara ◽  
Stacia Keller ◽  
James S. Speck ◽  
Steven P. DenBaars ◽  
Umesh K. Mishra
Keyword(s):  
Ohmic Contact ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Enhancement Mode ◽  
Heterojunction Field Effect Transistors

Schottky Barrier 3C-SiC Nanowire Field Effect Transistor

2011 ◽  
Vol 679-680 ◽  
pp. 613-616 ◽  
Author(s):  
Konstantinos Rogdakis ◽  
Edwige Bano ◽  
Laurent Montes ◽  
Mikhael Bechelany ◽  
David Cornu ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Barriers ◽  
Catalyst Free ◽  
Effect Transistor ◽  
Contact Barrier ◽  
Gating Effect

Back-gated field effect transistors (FETs) based on catalyst-free grown 3C-SiC nanowire (NW) were fabricated. Devices with rectifying Source (S) and Drain (D) contacts have been observed. In contrast with the ohmic-like devices reported in the literature, the Schottky contact barrier (SB) at S/ D regions acts beneficially for the FET performance by suppressing the off-current. At high positive gate voltages (>10 V), the Schottky barriers tend to be more transparent leading to ION/IOFF ratio equal to ~ 103 in contrast to the weak gating effect of the ohmic-contacted 3C-SiC NWFETs.

Tunable Schottky barriers in ultrathin black phosphorus field effect transistors via polymer capping

2D Materials ◽  
2019 ◽  
Vol 6 (2) ◽  
pp. 024001 ◽  
Author(s):  
Yanyong Li ◽  
Shenghuang Lin ◽  
Yanghui Liu ◽  
Yang Chai ◽  
Shu Ping Lau
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Black Phosphorus ◽  
Schottky Barriers ◽  
Polymer Capping

The Electrical Characterization of Single ZnO Nanowries Field-Effect Transistors

2010 ◽  
Vol 654-656 ◽  
pp. 1178-1181
Author(s):  
Hui Feng Li ◽  
Yun Hua Huang ◽  
Xiu Jun Xing ◽  
Jia Su ◽  
Yue Zhang
Keyword(s):  
Ohmic Contact ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Vacuum ◽  
Electrical Characterization ◽  
Current Transport ◽  
Zno Nanowire ◽  
Metal Materials ◽  
Scanning Electron

The electrical properties of single ZnO nanowire were researched in the chamber of a scanning electron microscope under high-vacuum conditions using nanomanipulator and measurement system. The result shows that ZnO nanowire resistivity was about 1.4 Ω•cm with Ohmic contact. The local change of electron density induced by Shottky contacts or Ohmic contact with tip and semiconductor/metal materials significantly affects the current transport through the nanowire. Single ZnO nanowire was configured as field effect transistors (FET) and based on metal tantalum (Ta) as electrodes show a pronounced n-type gate modulation with an electron concentration of ~1.0×1019 cm−3 and an electron mobility of ~52 cm2 /V s at a bias voltage of 1 V.

Sign in / Sign up

Export Citation Format

Share Document