scholarly journals Study of the surface species during thermal and plasma-enhanced atomic layer deposition of titanium oxide films using in situ IR-spectroscopy and in vacuo X-ray photoelectron spectroscopy

2020 ◽  
Vol 22 (17) ◽  
pp. 9262-9271
Author(s):  
Sofie S. T. Vandenbroucke ◽  
Elisabeth Levrau ◽  
Matthias M. Minjauw ◽  
Michiel Van Daele ◽  
Eduardo Solano ◽  
...  
Keyword(s):  
Ir Spectroscopy ◽  
Photoelectron Spectroscopy ◽  
Atomic Layer ◽  
Surface Species ◽  
X Ray ◽  
Layer Deposition ◽  
In Situ Ir ◽  
Titanium Oxide Films ◽  
In Situ Ir Spectroscopy

By the powerful combination of in situ FTIR and in vacuo XPS, the surface species during ALD of TDMAT with different reactants could be identified.

scholarly journals Ambient pressure x-ray photoelectron spectroscopy setup for synchrotron-based in situ and operando atomic layer deposition research

2022 ◽  
Vol 93 (1) ◽  
pp. 013905
Author(s):  
E. Kokkonen ◽  
M. Kaipio ◽  
H.-E. Nieminen ◽  
F. Rehman ◽  
V. Miikkulainen ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Ambient Pressure ◽  
Atomic Layer ◽  
X Ray ◽  
Layer Deposition

Surface species during ALD of platinum observed with in situ reflection IR spectroscopy

2018 ◽  
Vol 20 (39) ◽  
pp. 25343-25356 ◽  
Author(s):  
Michiel Van Daele ◽  
Christophe Detavernier ◽  
Jolien Dendooven
Keyword(s):  
Fourier Transform ◽  
Infrared Spectroscopy ◽  
Ir Spectroscopy ◽  
Atomic Layer Deposition ◽  
Fourier Transform Infrared Spectroscopy ◽  
Atomic Layer ◽  
Surface Species ◽  
Layer Deposition ◽  
Substrate Temperatures

Thermal atomic layer deposition (ALD) and plasma-enhanced ALD (PE-ALD) of Pt, using MeCpPtMe3 as the precursor and O2 gas or O2 plasma as the reactant, are studied with in situ reflection Fourier transform infrared spectroscopy (FTIR) at different substrate temperatures.

Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy

2017 ◽  
Vol 419 ◽  
pp. 107-113 ◽  
Author(s):  
Konstantin V. Egorov ◽  
Yury Yu. Lebedinskii ◽  
Anatoly A. Soloviev ◽  
Anastasia A. Chouprik ◽  
Alexander Yu. Azarov ◽  
...  
Keyword(s):  
Steady State ◽  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Atomic Layer ◽  
X Ray ◽  
Layer Deposition

Oxygen Vacancies at the γ-Al2O3/STO Heterointerface Grown by Atomic Layer Deposition

2015 ◽  
Vol 1730 ◽  
Author(s):  
Thong Q. Ngo ◽  
Martin D. McDaniel ◽  
Agham Posadas ◽  
Alexander A. Demkov ◽  
John G. Ekerdt
Keyword(s):  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Oxygen Vacancies ◽  
Atomic Layer ◽  
High Energy ◽  
Ex Situ ◽  
X Ray ◽  
Layer Deposition ◽  
Dimensional Electron Gas

ABSTRACTWe report the epitaxial growth of γ-Al2O3 on SrTiO3 (STO) substrates by atomic layer deposition (ALD). The ALD growth of γ-Al2O3 on STO(001) single crystal substrates was performed at a temperature of 345 °C. Trimethylaluminum and water were used as co-reactants. In-situ reflection high-energy electron diffraction and ex-situ x-ray diffraction were used to determine the crystallinity of the Al2O3 films. In-situ x-ray photoelectron spectroscopy was used to characterize the Al2O3/STO heterointerface. The formation of a Ti3+ feature is observed in the Ti 2p spectrum of STO after the first few ALD cycles of Al2O3 and even after exposure of the STO substrate to trimethylaluminum alone at 345 °C. The presence of a Ti3+ feature is a direct indication of oxygen vacancies at the Al2O3/STO heterointerface, which provide the carriers for the quasi-two dimensional electron gas at the interface.

Atomic Layer Deposition of SrO: Substrate and Temperature Effects

2012 ◽  
Vol 1494 ◽  
pp. 179-183
Author(s):  
Han Wang ◽  
Xiaoqiang Jiang ◽  
Brian G. Willis
Keyword(s):  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Atomic Layer ◽  
Ex Situ ◽  
Hydroxyl Groups ◽  
Initial Growth ◽  
X Ray ◽  
Steady Growth ◽  
Layer Deposition

ABSTRACTThe atomic layer deposition (ALD) of SrO was conducted on various oxide surfaces by using strontium bis(tri-isopropylcyclopentadienyl) and water at deposition temperatures of 200 and 250°C. The initial and steady growth behaviors were studied by in-situ spectroscopic ellipsometry and ex-situ X-ray photoelectron spectroscopy. For initial growth, the growth per cycle (GPC) of SrO not only depends on the concentration of hydroxyl groups but also the formation of interfacial Sr-O-Si bonds. For the steady growth, in-situ annealing was used to enhance the growth rate and multiple growth regions were identified.

Atomic Layer Deposition of LiF and Lithium Ion Conducting (AlF3)(LiF)x Alloys Using Trimethylaluminum, Lithium Hexamethyldisilazide and Hydrogen Fluoride

2017 ◽  
Author(s):  
Younghee Lee ◽  
Daniela M. Piper ◽  
Andrew S. Cavanagh ◽  
Matthias J. Young ◽  
Se-Hee Lee ◽  
...  
Keyword(s):  
Lithium Ion ◽  
Atomic Layer ◽  
Mass Gain ◽  
Alloy Film ◽  
Ex Situ ◽  
X Ray ◽  
Layer Deposition ◽  
Ion Conducting ◽  
Good Agreement

<div>Atomic layer deposition (ALD) of LiF and lithium ion conducting (AlF<sub>3</sub>)(LiF)<sub>x</sub> alloys was developed using trimethylaluminum, lithium hexamethyldisilazide (LiHMDS) and hydrogen fluoride derived from HF-pyridine solution. ALD of LiF was studied using in situ quartz crystal microbalance (QCM) and in situ quadrupole mass spectrometer (QMS) at reaction temperatures between 125°C and 250°C. A mass gain per cycle of 12 ng/(cm<sup>2</sup> cycle) was obtained from QCM measurements at 150°C and decreased at higher temperatures. QMS detected FSi(CH<sub>3</sub>)<sub>3</sub> as a reaction byproduct instead of HMDS at 150°C. LiF ALD showed self-limiting behavior. Ex situ measurements using X-ray reflectivity (XRR) and spectroscopic ellipsometry (SE) showed a growth rate of 0.5-0.6 Å/cycle, in good agreement with the in situ QCM measurements.</div><div>ALD of lithium ion conducting (AlF3)(LiF)x alloys was also demonstrated using in situ QCM and in situ QMS at reaction temperatures at 150°C A mass gain per sequence of 22 ng/(cm<sup>2</sup> cycle) was obtained from QCM measurements at 150°C. Ex situ measurements using XRR and SE showed a linear growth rate of 0.9 Å/sequence, in good agreement with the in situ QCM measurements. Stoichiometry between AlF<sub>3</sub> and LiF by QCM experiment was calculated to 1:2.8. XPS showed LiF film consist of lithium and fluorine. XPS also showed (AlF<sub>3</sub>)(LiF)x alloy consists of aluminum, lithium and fluorine. Carbon, oxygen, and nitrogen impurities were both below the detection limit of XPS. Grazing incidence X-ray diffraction (GIXRD) observed that LiF and (AlF<sub>3</sub>)(LiF)<sub>x</sub> alloy film have crystalline structures. Inductively coupled plasma mass spectrometry (ICP-MS) and ionic chromatography revealed atomic ratio of Li:F=1:1.1 and Al:Li:F=1:2.7: 5.4 for (AlF<sub>3</sub>)(LiF)<sub>x</sub> alloy film. These atomic ratios were consistent with the calculation from QCM experiments. Finally, lithium ion conductivity (AlF<sub>3</sub>)(LiF)<sub>x</sub> alloy film was measured as σ = 7.5 × 10<sup>-6</sup> S/cm.</div>

In Situ IR Spectroscopy for Following the Copolymerization of CO2and Epoxides

2014 ◽  
Vol 86 (9) ◽  
pp. 1627-1628
Author(s):  
K. Böhm ◽  
W. Leitner ◽  
T. E. Müller
Keyword(s):  
Ir Spectroscopy ◽  
In Situ Ir ◽  
In Situ Ir Spectroscopy
Sign in / Sign up

Export Citation Format

Share Document