scholarly journals Ambient pressure x-ray photoelectron spectroscopy setup for synchrotron-based in situ and operando atomic layer deposition research

2022 ◽  
Vol 93 (1) ◽  
pp. 013905
Author(s):  
E. Kokkonen ◽  
M. Kaipio ◽  
H.-E. Nieminen ◽  
F. Rehman ◽  
V. Miikkulainen ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Ambient Pressure ◽  
Atomic Layer ◽  
X Ray ◽  
Layer Deposition

Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy

2017 ◽  
Vol 419 ◽  
pp. 107-113 ◽  
Author(s):  
Konstantin V. Egorov ◽  
Yury Yu. Lebedinskii ◽  
Anatoly A. Soloviev ◽  
Anastasia A. Chouprik ◽  
Alexander Yu. Azarov ◽  
...  
Keyword(s):  
Steady State ◽  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Atomic Layer ◽  
X Ray ◽  
Layer Deposition

Near Ambient Pressure X-ray Photoelectron Spectroscopy Study of the Atomic Layer Deposition of TiO2 on RuO2(110)

2015 ◽  
Vol 120 (1) ◽  
pp. 243-251 ◽  
Author(s):  
Ashley R. Head ◽  
Shilpi Chaudhary ◽  
Giorgia Olivieri ◽  
Fabrice Bournel ◽  
Jesper N. Andersen ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Ambient Pressure ◽  
Atomic Layer ◽  
Spectroscopy Study ◽  
X Ray ◽  
Layer Deposition

Oxygen Vacancies at the γ-Al2O3/STO Heterointerface Grown by Atomic Layer Deposition

2015 ◽  
Vol 1730 ◽  
Author(s):  
Thong Q. Ngo ◽  
Martin D. McDaniel ◽  
Agham Posadas ◽  
Alexander A. Demkov ◽  
John G. Ekerdt
Keyword(s):  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Oxygen Vacancies ◽  
Atomic Layer ◽  
High Energy ◽  
Ex Situ ◽  
X Ray ◽  
Layer Deposition ◽  
Dimensional Electron Gas

ABSTRACTWe report the epitaxial growth of γ-Al2O3 on SrTiO3 (STO) substrates by atomic layer deposition (ALD). The ALD growth of γ-Al2O3 on STO(001) single crystal substrates was performed at a temperature of 345 °C. Trimethylaluminum and water were used as co-reactants. In-situ reflection high-energy electron diffraction and ex-situ x-ray diffraction were used to determine the crystallinity of the Al2O3 films. In-situ x-ray photoelectron spectroscopy was used to characterize the Al2O3/STO heterointerface. The formation of a Ti3+ feature is observed in the Ti 2p spectrum of STO after the first few ALD cycles of Al2O3 and even after exposure of the STO substrate to trimethylaluminum alone at 345 °C. The presence of a Ti3+ feature is a direct indication of oxygen vacancies at the Al2O3/STO heterointerface, which provide the carriers for the quasi-two dimensional electron gas at the interface.

Atomic Layer Deposition of SrO: Substrate and Temperature Effects

2012 ◽  
Vol 1494 ◽  
pp. 179-183
Author(s):  
Han Wang ◽  
Xiaoqiang Jiang ◽  
Brian G. Willis
Keyword(s):  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Atomic Layer ◽  
Ex Situ ◽  
Hydroxyl Groups ◽  
Initial Growth ◽  
X Ray ◽  
Steady Growth ◽  
Layer Deposition

ABSTRACTThe atomic layer deposition (ALD) of SrO was conducted on various oxide surfaces by using strontium bis(tri-isopropylcyclopentadienyl) and water at deposition temperatures of 200 and 250°C. The initial and steady growth behaviors were studied by in-situ spectroscopic ellipsometry and ex-situ X-ray photoelectron spectroscopy. For initial growth, the growth per cycle (GPC) of SrO not only depends on the concentration of hydroxyl groups but also the formation of interfacial Sr-O-Si bonds. For the steady growth, in-situ annealing was used to enhance the growth rate and multiple growth regions were identified.

scholarly journals Structural and Optical Properties of Luminescent Copper(I) Chloride Thin Films Deposited by Sequentially Pulsed Chemical Vapour Deposition

Coatings ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 369 ◽  
Author(s):  
Richard Krumpolec ◽  
Tomáš Homola ◽  
David Cameron ◽  
Josef Humlíček ◽  
Ondřej Caha ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Chemical Vapour Deposition ◽  
Photoelectron Spectroscopy ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Atomic Layer ◽  
Nanocrystalline Films ◽  
Zinc Blende ◽  
Layer Deposition

Sequentially pulsed chemical vapour deposition was used to successfully deposit thin nanocrystalline films of copper(I) chloride using an atomic layer deposition system in order to investigate their application to UV optoelectronics. The films were deposited at 125 °C using [Bis(trimethylsilyl)acetylene](hexafluoroacetylacetonato)copper(I) as a Cu precursor and pyridine hydrochloride as a new Cl precursor. The films were analysed by XRD, X-ray photoelectron spectroscopy (XPS), SEM, photoluminescence, and spectroscopic reflectance. Capping layers of aluminium oxide were deposited in situ by ALD (atomic layer deposition) to avoid environmental degradation. The film adopted a polycrystalline zinc blende-structure. The main contaminants were found to be organic materials from the precursor. Photoluminescence showed the characteristic free and bound exciton emissions from CuCl and the characteristic exciton absorption peaks could also be detected by reflectance measurements.

scholarly journals Air Annealing Effect on Oxygen Vacancy Defects in Al-doped ZnO Films Grown by High-Speed Atmospheric Atomic Layer Deposition

Molecules ◽  
2020 ◽  
Vol 25 (21) ◽  
pp. 5043
Author(s):  
Chia-Hsun Hsu ◽  
Xin-Peng Geng ◽  
Wan-Yu Wu ◽  
Ming-Jie Zhao ◽  
Xiao-Ying Zhang ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Band Gap ◽  
Photoelectron Spectroscopy ◽  
High Speed ◽  
Oxygen Vacancies ◽  
Annealing Temperature ◽  
Atomic Layer ◽  
Zno Films ◽  
X Ray ◽  
Layer Deposition

In this study, aluminum-doped zinc oxide (Al:ZnO) thin films were grown by high-speed atmospheric atomic layer deposition (AALD), and the effects of air annealing on film properties are investigated. The experimental results show that the thermal annealing can significantly reduce the amount of oxygen vacancies defects as evidenced by X-ray photoelectron spectroscopy spectra due to the in-diffusion of oxygen from air to the films. As shown by X-ray diffraction, the annealing repairs the crystalline structure and releases the stress. The absorption coefficient of the films increases with the annealing temperature due to the increased density. The annealing temperature reaching 600 °C leads to relatively significant changes in grain size and band gap. From the results of band gap and Hall-effect measurements, the annealing temperature lower than 600 °C reduces the oxygen vacancies defects acting as shallow donors, while it is suspected that the annealing temperature higher than 600 °C can further remove the oxygen defects introduced mid-gap states.

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