Type-II tunable SiC/InSe heterostructures under an electric field and biaxial strain

2020 ◽  
Vol 22 (17) ◽  
pp. 9647-9655 ◽  
Author(s):  
Zhu Wang ◽  
Yan Zhang ◽  
Xing Wei ◽  
Tingting Guo ◽  
Jibin Fan ◽  
...  
Keyword(s):  
Electric Field ◽  
Effective Mass ◽  
Band Alignment ◽  
Type Ii ◽  
Biaxial Strain ◽  
Carrier Effective Mass

A novel type II band alignment with lower carrier effective mass can be adjusted by an electric field and strain.

Vertical strain and electric field tunable electronic properties of type-II band alignment C2N/InSe van der Waals heterostructure

2019 ◽  
Vol 716 ◽  
pp. 155-161 ◽  
Author(s):  
Khang D. Pham ◽  
Nguyen N. Hieu ◽  
Le M. Bui ◽  
Huynh V. Phuc ◽  
Bui D. Hoi ◽  
...  
Keyword(s):  
Electric Field ◽  
Electronic Properties ◽  
Van Der Waals ◽  
Band Alignment ◽  
Type Ii ◽  
Vertical Strain ◽  
Van Der Waals Heterostructure

Tunable type-II band alignment and electronic structure of C3N4/MoSi2N4 heterostructure: Interlayer coupling and electric field

2022 ◽  
Vol 105 (4) ◽  
Author(s):  
Cuong Q. Nguyen ◽  
Yee Sin Ang ◽  
Son-Tung Nguyen ◽  
Nguyen V. Hoang ◽  
Nguyen Manh Hung ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Electric Field ◽  
Interlayer Coupling ◽  
Band Alignment ◽  
Type Ii

Vertical strain and electric field tunable band alignment in type-II ZnO/MoSSe van der Waals heterostructures

2021 ◽  
Author(s):  
Pan Wang ◽  
Yixin Zong ◽  
Hao Liu ◽  
Hongyu Wen ◽  
Yueyang Liu ◽  
...  
Keyword(s):  
Electric Field ◽  
Van Der Waals ◽  
Band Alignment ◽  
Type Ii ◽  
Van Der Waals Heterostructures ◽  
Vertical Strain

The band alignment of type-II ZnO/MoSSe vdWH can be tuned to types I and III by strain and the electric field.

Tunable electronic properties of the novel g-ZnO/1T-TiS2 vdW heterostructure by electric field and strain: crossovers in bandgap and band alignment types

2020 ◽  
Vol 22 (14) ◽  
pp. 7412-7420 ◽  
Author(s):  
Kourosh Rahimi
Keyword(s):  
Electric Field ◽  
Electronic Properties ◽  
Band Alignment ◽  
The Novel ◽  
Biaxial Strain ◽  
Tunable Bandgap ◽  
Vdw Heterostructure

The promising g-ZnO/1T-TiS2 vdW heterostructure with tunable bandgap and band alignment type under biaxial strain and electric field was proposed.

The electric field modulation of electronic properties in a type-II phosphorene/PbI2 van der Waals heterojunction

2019 ◽  
Vol 21 (15) ◽  
pp. 7765-7772 ◽  
Author(s):  
Yuting Wei ◽  
Fei Wang ◽  
Wenli Zhang ◽  
Xiuwen Zhang
Keyword(s):  
Solar Energy ◽  
Electric Field ◽  
Electronic Properties ◽  
External Electric Field ◽  
Van Der Waals ◽  
Optoelectronic Devices ◽  
Band Alignment ◽  
Type Ii ◽  
Direct Bandgap ◽  
Field Modulation

The 0.52/0.83 eV direct bandgap of P/PbI2 possesses a type-II band alignment, can effectively be regulated to 0.90/1.54 eV using an external electric field in DFT/HSE06, and is useful for solar energy and optoelectronic devices.

scholarly journals Effect of Inter-Well Coupling between 3C and 6H in-Grown Stacking Faults in 4H-SiC Epitaxial Layers

2011 ◽  
Vol 679-680 ◽  
pp. 314-317 ◽  
Author(s):  
Teddy Robert ◽  
Maya Marinova ◽  
Sandrine Juillaguet ◽  
Anne Henry ◽  
Efstathios K. Polychroniadis ◽  
...  
Keyword(s):  
Electric Field ◽  
Quantum Wells ◽  
Effective Mass ◽  
Stacking Faults ◽  
Type Ii ◽  
Mass Approximation ◽  
Natural Type ◽  
Heavily Doped ◽  
Excitonic Recombination ◽  
Different Parts

Both 3C and 6H stacking faults have been observed in a low doped 4H-SiC epitaxial layer grown in a hot-wall CVD reactor on a heavily doped (off-axis) 4H-SiC substrate. They appear differently on the different parts of sample, with energetic dispersion ranging from 3.01 eV to 2.52 eV. Since they behave as natural type-II quantum wells in the 4H-SiC matrix, the thickness dependence of the excitonic recombination is investigated using the standard effective mass approximation. The results are discussed in terms of built-in electric field and inter-well coupling effects.

In-plane interfacing effects of two-dimensional transition-metal dichalcogenide heterostructures

2016 ◽  
Vol 18 (23) ◽  
pp. 15632-15638 ◽  
Author(s):  
Wei Wei ◽  
Ying Dai ◽  
Baibiao Huang
Keyword(s):  
Transition Metal ◽  
Electric Field ◽  
Band Alignment ◽  
Transition Metal Dichalcogenide ◽  
Type Ii ◽  
Two Dimensional ◽  
Defect States ◽  
True Type

Two-dimensional TMD in-plane heterostructures demonstrate true type-II band alignment and the built-in electric field makes the defect states consecutive.

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