Electro-elastic features of Nd-doped YAl3(BO3)4 single crystal

CrystEngComm ◽  
2020 ◽  
Vol 22 (45) ◽  
pp. 7816-7825
Author(s):  
Mengdi Fan ◽  
Guangda Wu ◽  
Feifei Chen ◽  
Fapeng Yu ◽  
Xiufeng Cheng ◽  
...  
Keyword(s):  
High Temperature ◽  
Single Crystal ◽  
Temperature Stability ◽  
High Resistivity ◽  
Piezoelectric Activity

The NYAB crystal shows relatively high resistivity and good temperature stability of piezoelectric activity, potential for high temperature piezoelectric applications.

Thermal stability of TiSi2 films on single crystal and polycrystalline silicon

1991 ◽  
Vol 6 (7) ◽  
pp. 1502-1511 ◽  
Author(s):  
Krishna Shenai
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Single Crystal ◽  
Polycrystalline Silicon ◽  
Temperature Stability ◽  
Process Variations ◽  
Titanium Silicide ◽  
High Temperature Stability ◽  
Crystal Silicon ◽  
Thermal Stability Of

The stability of selectively formed TiSi2 films on single crystal and polycrystalline silicon layers at elevated process temperatures is reported. Extensive electrical and analytical studies were performed to understand the high-temperature stability of TiSi2 films as a function of (i) substrate dopant concentration, (ii) titanium silicide thickness, (iii) silicide formation sequence, and (iv) silicide post-processing steps. It is shown that all four process variations have a profound influence on the thermal stability of TiSi2 films. It is observed that titanium silicide films formed on single crystal silicon are stable at higher processing temperatures compared to those formed on polysilicon substrates under similar conditions. The degradation of high-temperature stability of TiSi2 films on polycrystalline silicon can be related to increased number of defects and grain boundaries. It is shown that TiSi2 films can be successfully used in silicon integrated circuit applications where the post-silicide processing temperatures do not exceed 1000 °C.

UNS N06455

Alloy Digest ◽  
1989 ◽  
Vol 38 (1) ◽  
Keyword(s):  
Corrosion Resistance ◽  
High Temperature ◽  
Stress Corrosion Cracking ◽  
Temperature Stability ◽  
Heat Treating ◽  
High Ductility ◽  
High Temperature Stability ◽  
Nickel Chromium ◽  
Long Time ◽  
Resistance To Stress

Abstract UNS NO6455 is a nickel-chromium-molybdenum alloy with outstanding high-temperature stability as shown by high ductility and corrosion resistance even after long-time aging in the range 1200-1900 F. The alloy also has excellent resistance to stress-corrosion cracking and to oxidizing atmospheres up to 1900 F. This datasheet provides information on composition, physical properties, hardness, elasticity, and tensile properties. It also includes information on corrosion resistance as well as forming, heat treating, machining, and joining. Filing Code: Ni-367. Producer or source: Nickel and nickel alloy producers.

UNS R54620

Alloy Digest ◽  
1987 ◽  
Vol 36 (7) ◽  
Keyword(s):  
Titanium Alloy ◽  
High Temperature ◽  
Time Use ◽  
Temperature Stability ◽  
High Strength ◽  
Heat Treating ◽  
High Temperature Stability ◽  
Beta Titanium Alloy ◽  
Beta Titanium ◽  
Long Time

Abstract UNS No. R54620 is an alpha-beta titanium alloy. It has an excellent combination of tensile strength, creep strength, toughness and high-temperature stability that makes it suitable for service to 1050 F. It is recommended for use where high strength is required. It has outstanding advantages for long-time use at temperatures to 800 F. This datasheet provides information on composition, physical properties, elasticity, tensile properties, and bend strength as well as creep. It also includes information on high temperature performance and corrosion resistance as well as forming, heat treating, machining, joining, and surface treatment. Filing Code: Ti-86. Producer or source: Titanium alloy mills.

Creep and damage of a Re/Ru-containing single crystal nickel-based alloy at high temperature

2021 ◽  
Vol 808 ◽  
pp. 140870
Author(s):  
Huajin Yan ◽  
Sugui Tian ◽  
Guoqi Zhao ◽  
Ning Tian ◽  
Shunke Zhang
Keyword(s):  
High Temperature ◽  
Single Crystal ◽  
Nickel Based Alloy

scholarly journals Tuning the Electrical Properties of NiO Thin Films by Stoichiometry and Microstructure

Coatings ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 697
Author(s):  
Yu-He Liu ◽  
Xiao-Yan Liu ◽  
Hui Sun ◽  
Bo Dai ◽  
Peng Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Energy Loss ◽  
Single Crystal ◽  
Oxygen Stoichiometry ◽  
High Resistivity ◽  
Edge Structure ◽  
Glass Substrates ◽  
Lower Resistivity

Here, the electrical properties of NiO thin films grown on glass and Al2O3 (0001) substrates have been investigated. It was found that the resistivity of NiO thin films strongly depends on oxygen stoichiometry. Nearly perfect stoichiometry yields extremely high resistivity. In contrast, off-stoichiometric thin films possess much lower resistivity, especially for oxygen-rich composition. A side-by-side comparison of energy loss near the edge structure spectra of Ni L3 edges between our NiO thin films and other theoretical spectra rules out the existence of Ni3+ in NiO thin films, which contradicts the traditional hypothesis. In addition, epitaxial NiO thin films grown on Al2O3 (0001) single crystal substrates exhibit much higher resistivity than those on glass substrates, even if they are deposited simultaneously. This feature indicates the microstructure dependence of electrical properties.

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