(100)-Oriented gallium oxide substrate for metal organic vapor phase epitaxy for ultraviolet emission
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High-quality low-stress GaN and MQWs emitting in the UV region were grown on (100) β-Ga2O3 by MOVPE using a pulsed-flow method.
2004 ◽
Vol 267
(1-2)
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pp. 140-144
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1998 ◽
Vol 195
(1-4)
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pp. 558-563
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2007 ◽
Vol 4
(7)
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pp. 2502-2505
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