scholarly journals Graphene field-effect transistors as bioanalytical sensors: design, operation and performance

The Analyst ◽  
2021 ◽  
Author(s):  
Anouk Béraud ◽  
Madline Sauvage ◽  
Claudia M. Bazán ◽  
Monique Tie ◽  
Amira Bencherif ◽  
...  
Keyword(s):  
Small Molecules ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Electrical Conductance ◽  
Biologically Relevant ◽  
Quantitative Analyses ◽  
And Performance ◽  
Biologically Relevant Molecules

Changes in the electrical conductance of graphene field-effect transistors (GFETs) are used to perform quantitative analyses of biologically-relevant molecules such as DNA, proteins, ions and small molecules.

High performance solution-processable tetrathienoacene (TTAR) based small molecules for organic field effect transistors (OFETs)

2017 ◽  
Vol 53 (43) ◽  
pp. 5898-5901 ◽  
Author(s):  
Sureshraju Vegiraju ◽  
Deng-Yi Huang ◽  
Pragya Priyanka ◽  
Yo-Shan Li ◽  
Xian-Lun Luo ◽  
...  
Keyword(s):  
Small Molecules ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Solution Processable

DDTT-TTARexhibits the highest mobility of 0.81 cm2V−1s−1.

Direct C–H arylation for various Ar-cored diketopyrrolopyrrole containing small molecules in solution-processed field-effect transistors

RSC Advances ◽  
2016 ◽  
Vol 6 (62) ◽  
pp. 57163-57173 ◽  
Author(s):  
Shifan Wang ◽  
Jie Yang ◽  
Katharina Broch ◽  
Jiri Novák ◽  
Xudong Cao ◽  
...  
Keyword(s):  
Small Molecules ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Hole Mobility ◽  
Solution Processed

D–A–π–A–D small molecules Ar(DPPT2)2 are designed and synthesized by direct (hetero) C–H arylation, with hole mobility as high as 0.12 cm2 V−1 s−1.

Fabrication and performance of diamond field effect transistors, transfer-doped with vanadium pentoxide

2021 ◽  
Author(s):  
James Weil ◽  
Pankaj B. Shah ◽  
Dmitry A. Ruzmetov ◽  
Mahesh R. Neupane ◽  
Leonard M. De La Cruz ◽  
...  
Keyword(s):  
Vanadium Pentoxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
And Performance

Comparative Performance Analysis of Nanowire and Nanotube Field Effect Transistors

2021 ◽  
pp. 54-70
Author(s):  
Raj Kumar ◽  
Shashi Bala ◽  
Arvind Kumar
Keyword(s):  
Performance Analysis ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Ballistic Transport ◽  
High Mobility ◽  
Short Channel Effects ◽  
Short Channel ◽  
Comparative Performance ◽  
Channel Effects ◽  
And Performance

To have enhanced drive current and diminish short channel effects, planer MOS transistors have migrated from single-gate devices to three-dimensional multi-gate MOSFETs. The gate-all-around nanowire field-effect transistor (GAA NWFET) and nanotube or double gate-all-around field-effect transistors (DGGA-NTFET) have been proposed to deal with short channel effects and performance relates issues. Nanowire and nanotube-based field-effect transistors can be considered as leading candidates for nanoscale devices due to their superior electrostatic controllability, and ballistic transport properties. In this work, the performance of GAA NWFETs and DGAA-NT FETs will be analyzed and compared. III-V semiconductor materials as a channel will also be employed due to their high mobility over silicon. Performance analysis of junctionless nanowire and nanotube FETs will also be compared and presented.

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