Phase transition, optical and dielectric properties regulated by anion-substitution in a homologous series of 2D hybrid organic–inorganic perovskites

2019 ◽  
Vol 7 (38) ◽  
pp. 11964-11971 ◽  
Author(s):  
Wen-Juan Wei ◽  
Chao Li ◽  
Lin-Sui Li ◽  
Yun-Zhi Tang ◽  
Xing-Xing Jiang ◽  
...  
Keyword(s):  
Phase Transition ◽  
Transition Temperature ◽  
Dielectric Properties ◽  
Band Gap ◽  
Phase Transition Temperature ◽  
Homologous Series ◽  
Halogen Atoms ◽  
Anion Substitution

Three homologous 2D organic–inorganic perovskites exhibit regulative magnitudes of phase transition temperature up to 185 K and band gap up to 1.79 eV as halogen atoms vary from Cl, Br to I.

scholarly journals Mg/W-codoped vanadium dioxide thin films with enhanced visible transmittance and low phase transition temperature

2015 ◽  
Vol 3 (26) ◽  
pp. 6771-6777 ◽  
Author(s):  
Ning Wang ◽  
Shiyu Liu ◽  
X. T. Zeng ◽  
Shlomo Magdassi ◽  
Yi Long
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Transition Temperature ◽  
Charge Carrier ◽  
Band Gap ◽  
Phase Transition Temperature ◽  
Vanadium Dioxide ◽  
Visible Transmittance ◽  
Vanadium Dioxide Thin Films

Mg2+ and W6+ cations were first codoped into the VO2 lattice, resulting in a widened photon band gap and h+/e− charge carrier accumulation. These effects enhanced the thermochromic performance with a high visible transmission (∼80%) and a low phase transition temperature (∼30 °C).

Halogen substitution regulates the phase transition temperature and band gap of semiconductor compounds

2020 ◽  
Vol 56 (11) ◽  
pp. 1697-1700 ◽  
Author(s):  
Hui-Hui Li ◽  
Chang-Feng Wang ◽  
Ya-Xing Wu ◽  
Fan Jiang ◽  
Chao Shi ◽  
...  
Keyword(s):  
Phase Transition ◽  
Transition Temperature ◽  
Band Gap ◽  
Phase Transition Temperature ◽  
Semiconductor Compounds ◽  
Semiconductor Properties

Halogen substitution creates a promising platform for designing and optimizing materials with a combination of attractive dielectric and semiconductor properties.

Effects of Mn Doping on Dielectric Properties of BSTN Ceramics

2008 ◽  
Vol 368-372 ◽  
pp. 72-74
Author(s):  
Xin Cheng ◽  
Zong Hui Zhou
Keyword(s):  
Phase Transition ◽  
Phase Composition ◽  
Transition Temperature ◽  
Dielectric Properties ◽  
Phase Transition Temperature ◽  
Tungsten Bronze ◽  
Dielectric Constants ◽  
Composite Ceramics ◽  
Mn Doping ◽  
Applied Frequency

The effects of Mn doping on the phase composition and dielectric properties of (1-x)BaO·xSrO·0.7TiO2·0.3Nb2O5 (BSTN) composite ceramics was investigated. The results showed that the dielectric constants of 0.7BaO·0.3SrO·(0.7-z)TiO2·0.3Nb2O5·zMnO2 (BSTNM) composite ceramics basically decreases as the content of doped MnO2 increases at the same applied frequency, while tanδ decreases when value z≤0.01 but increases when value z>0.01. The phase transition temperature of tungsten bronze phase in BSTNM composite ceramics increases with the increase of value z.

Band-gap photoreflectance spectra of SbSI near the phase-transition temperature

1978 ◽  
Vol 21 (1) ◽  
pp. 565-567 ◽  
Author(s):  
Sh. M. Efendiev ◽  
M. Grandolfo ◽  
C. Ranghiasci ◽  
P. Vecchia
Keyword(s):  
Phase Transition ◽  
Transition Temperature ◽  
Band Gap ◽  
Phase Transition Temperature

scholarly journals Phase transition and dielectric properties of BaTiO3 ceramics containing 10 mol% BaGeO3

2018 ◽  
Author(s):  
Roberto Köferstein
Keyword(s):  
Phase Transition ◽  
Transition Temperature ◽  
Dielectric Properties ◽  
Phase Transition Temperature ◽  
Ferroelectric Phase ◽  
Grain Sizes ◽  
Ferroelectric Phase Transition Temperature ◽  
Permittivity Maximum ◽  
Tetragonal Phase Transition ◽  
Maximum Permittivity

Dielectric properties and the cubic ? tetragonal phase transition temperature ofdense BaTiO3 ceramics containing 10 mol% BaGeO3, sintered between 840 and 1350 °C,have been investigated. The ceramic bodies were prepared from a nano-sized BaTi0.9/Ge0.1O3powder consisting of both BaTiO3 and BaGeO3 phases. The addition of BaGeO3 leads to areduction and broadening of the permittivity maximum, and to a small downshift of theparaelectric ? ferroelectric phase transition temperature, compared to a pure BaTiO3 ceramic.Lower sintering temperatures and thus small grain sizes of the ceramics cause an additionalreduction of the maximum permittivity down to 2800. Both DTA and dilatometricmeasurements reveal also a downshifting of the phase transition temperature, as well as adecrease of the latent heat.

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