Zr vacancy interfaces: an effective strategy for collaborative optimization of ZrNiSn-based thermoelectric performance

2019 ◽  
Vol 7 (45) ◽  
pp. 26053-26061 ◽  
Author(s):  
Yihua Zhang ◽  
Shuankui Li ◽  
Fusheng Liu ◽  
Chaohua Zhang ◽  
Lipeng Hu ◽  
...  

Grain boundaries play a key role in carrier/phonon transport in thermoelectric materials.

2015 ◽  
Vol 3 (32) ◽  
pp. 8372-8380 ◽  
Author(s):  
Gangjian Tan ◽  
Hang Chi ◽  
Wei Liu ◽  
Yun Zheng ◽  
Xinfeng Tang ◽  
...  

The InSb nanoinclusions formed in situ at the grain boundaries of FeSb2.2Te0.8 mitigates the mobility degradation while the added grain boundaries effectively scatter heat-carrying phonons. This novel “electron-channel phonon-barrier” nanocompositing approach opens a new route to design high performance thermoelectric materials.


2018 ◽  
Vol 11 (04) ◽  
pp. 1850069 ◽  
Author(s):  
Xuerui Liu ◽  
Shuankui Li ◽  
Tinyang Liu ◽  
Weiming Zhu ◽  
Rui Wang ◽  
...  

With the development of nanotechnology, thermoelectric materials with complex heterogeneous nanostructure offer a promising approach to improve the thermoelectric performance. In this work, SnSe/SnS hetero-nanosheet was tuned by the epitaxial growth of SnSe on the few layers of SnS nanosheets. The heterojunction interface can optimize the carrier/phonon transport behavior by energy filtering effect and scattering the phonon in multiple scales. Compared with pristine SnSe, the power factor of SnSe/SnS hetero-nanosheet increases from 2.2[Formula: see text][Formula: see text]V/cmK2 to 3.21[Formula: see text][Formula: see text]V/cmK2 at 773[Formula: see text]K, whereas the thermal conductivity decreases significantly from 0.65[Formula: see text]W[Formula: see text][Formula: see text][Formula: see text]m[Formula: see text] to 0.48[Formula: see text]W[Formula: see text][Formula: see text][Formula: see text]m[Formula: see text] at 773[Formula: see text]K. The maximum ZT of 0.5 is obtained at 773[Formula: see text]K in the SnSe/SnS hetero-nanosheets, which is 89% higher than pristine SnSe. This approach is proved to be a promising strategy to design high performance thermoelectric materials.


2021 ◽  
Author(s):  
Moinak Dutta ◽  
Debattam Sarkar ◽  
Kanishka Biswas

Thermoelectric materials which can convert heat energy to electricity relies on crystalline inorganic solid state compounds exhibiting low phonon transport (i.e. low thermal conductivity) without much inhibiting the electrical transport....


Author(s):  
Siqi Wang ◽  
Yu Xiao ◽  
Yongjin Chen ◽  
Shang Peng ◽  
Dongyang Wang ◽  
...  

Hierarchical microstructures lead to high thermoelectric performance in Cum+nPb100SbmTe100Se2m (CLAST) through synergistically optimizing carrier and phonon transport.


Author(s):  
Junphil Hwang ◽  
Minju Lee ◽  
Byung-Kyu Yu ◽  
Mi-Kyung Han ◽  
Woochul Kim ◽  
...  

Thermoelectric coated grain nanocomposites CuInTe2/SnTe with eco-friendly elements was synthesized. The nanocomposite contains a coating layer of CuInTe2 and SnO2 at the grain boundaries of the SnTe matrix. The coating...


2017 ◽  
Vol 5 (47) ◽  
pp. 12441-12456 ◽  
Author(s):  
Jan-Hendrik Pöhls ◽  
Alireza Faghaninia ◽  
Guido Petretto ◽  
Umut Aydemir ◽  
Francesco Ricci ◽  
...  

Metal phosphides are predicted to have high thermoelectric performance due to enhanced electronic band structures and low thermal conductivities.


2021 ◽  
Vol 871 ◽  
pp. 203-207
Author(s):  
Jian Liu

In this work, we use first principles DFT calculations, anharmonic phonon scatter theory and Boltzmann transport method, to predict a comprehensive study on the thermoelectric properties as electronic and phonon transport of layered LaSe2 crystal. The flat-and-dispersive type band structure of LaSe2 crystal offers a high power factor. In the other hand, low lattice thermal conductivity is revealed in LaSe2 semiconductor, combined with its high power factor, the LaSe2 crystal is considered a promising thermoelectric material. It is demonstrated that p-type LaSe2 could be optimized to exhibit outstanding thermoelectric performance with a maximum ZT value of 1.41 at 1100K. Explored by density functional theory calculations, the high ZT value is due to its high Seebeck coefficient S, high electrical conductivity, and low lattice thermal conductivity .


2018 ◽  
Vol 6 (41) ◽  
pp. 20454-20462 ◽  
Author(s):  
Juan Li ◽  
Shuai Zhang ◽  
Boyi Wang ◽  
Shichao Liu ◽  
Luo Yue ◽  
...  

Thermoelectric performance can be largely enhanced by forming solid solutions and biaxial strain.


2018 ◽  
Vol 6 (45) ◽  
pp. 22381-22390 ◽  
Author(s):  
Yufeng Xue ◽  
Chunmei Gao ◽  
Lirong Liang ◽  
Xin Wang ◽  
Guangming Chen

This review discusses recent advances in controlled fabrication of nanostructures and the enhanced thermoelectric performance of polymers and their composites.


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