Toward high thermoelectric performance p-type FeSb2.2Te0.8via in situ formation of InSb nanoinclusions
2015 ◽
Vol 3
(32)
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pp. 8372-8380
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Keyword(s):
The InSb nanoinclusions formed in situ at the grain boundaries of FeSb2.2Te0.8 mitigates the mobility degradation while the added grain boundaries effectively scatter heat-carrying phonons. This novel “electron-channel phonon-barrier” nanocompositing approach opens a new route to design high performance thermoelectric materials.
2017 ◽
Vol 29
(8)
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pp. 3572-3579
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2017 ◽
Vol 23
(40)
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pp. 9517-9524
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2018 ◽
Vol 6
(41)
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pp. 20454-20462
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2018 ◽
Vol 6
(45)
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pp. 22381-22390
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2020 ◽
Vol 10
(7)
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pp. 1903193
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