An interfacial crosslinking strategy to fabricate an ultrathin two-dimensional composite of silicon oxycarbide-enwrapped silicon nanoparticles for high-performance lithium storage

2019 ◽  
Vol 7 (40) ◽  
pp. 22950-22957 ◽  
Author(s):  
Junlong Huang ◽  
Kunyi Leng ◽  
Yongqi Chen ◽  
Luyi Chen ◽  
Shaohong Liu ◽  
...  
Keyword(s):  
High Performance ◽  
Silicon Nanoparticles ◽  
Silicon Oxycarbide ◽  
Two Dimensional ◽  
Lithium Storage

An interfacial crosslinking strategy to fabricate an ultrathin two-dimensional composite of silicon oxycarbide-enwrapped silicon nanoparticles for high-performance lithium storage.

Encapsulating silicon nanoparticles into N-doped carbon film as a high-performance anode for lithium ion batteries

2018 ◽  
Vol 11 (04) ◽  
pp. 1850067 ◽  
Author(s):  
Zheng Xing ◽  
Chunlai Huang ◽  
Yichen Deng ◽  
Yulong Zhao ◽  
Zhicheng Ju
Keyword(s):  
Current Density ◽  
High Performance ◽  
Large Scale ◽  
Silicon Nanoparticles ◽  
Specific Capacity ◽  
Carbon Film ◽  
Lithium Ion ◽  
Fast Diffusion ◽  
Lithium Storage ◽  
Si Nanoparticles

A flexible strategy is to exploit encapsulating Si nanoparticles into N-doping carbon film (Si-NC) that can effectively localize the Si nanoparticles, thereby solving the problem of serious volume change during cycling as well as facilitating the fast diffusion of Li[Formula: see text], and thus achieving improved anode performance. A maximum capacity of 883.1[Formula: see text]mAh[Formula: see text]g[Formula: see text] at the current density of 100[Formula: see text]mA[Formula: see text]g[Formula: see text] after 50 charge and discharge processes is achieved for Si-NC. Even at a large current density of 2000[Formula: see text]mA[Formula: see text]g[Formula: see text], a specific capacity of 415[Formula: see text]mAh[Formula: see text]g[Formula: see text] is maintained. Moreover, the charge capacity can still almost recover the initial capacity as the current density is reverted to 100[Formula: see text]mA[Formula: see text]g[Formula: see text], indicating that Si-NC has a superior rate performance in lithium storage. This facile synthesis route provides a new perspective to produce Si/C composite at a low cost and large scale with good electrochemical performance.

scholarly journals Amorphous TiO2Shells: A Vital Elastic Buffering Layer on Silicon Nanoparticles for High-Performance and Safe Lithium Storage

2017 ◽  
Vol 29 (48) ◽  
pp. 1700523 ◽  
Author(s):  
Jianping Yang ◽  
Yunxiao Wang ◽  
Wei Li ◽  
Lianjun Wang ◽  
Yuchi Fan ◽  
...  
Keyword(s):  
High Performance ◽  
Silicon Nanoparticles ◽  
Lithium Storage

Highly effective fabrication of two dimensional metal oxides as high performance lithium storage anodes

2019 ◽  
Vol 7 (8) ◽  
pp. 3924-3932 ◽  
Author(s):  
Zhi Chen ◽  
Cun Wang ◽  
Min Chen ◽  
Changchun Ye ◽  
Zeheng Lin ◽  
...  
Keyword(s):  
Metal Oxides ◽  
High Performance ◽  
Solvent Ratio ◽  
Two Dimensional ◽  
Lithium Storage ◽  
Highly Effective

H2O/DMF solvent ratio-tuned MnO microflakes serve as high-performance lithium storage anodes, further improved by CNTs assisted-synthesis.

scholarly journals Two-Dimensional Cobalt-/Nickel-Based Oxide Nanosheets for High-Performance Sodium and Lithium Storage

2016 ◽  
Vol 22 (50) ◽  
pp. 18060-18065 ◽  
Author(s):  
Dan Zhang ◽  
Wenping Sun ◽  
Zhihui Chen ◽  
Yu Zhang ◽  
Wenbin Luo ◽  
...  
Keyword(s):  
High Performance ◽  
Two Dimensional ◽  
Lithium Storage ◽  
Cobalt Nickel

Co-planar two-dimensional Metal-Insulator-Semiconductor Capacitor: Numerical study of the device electrostatics.

2017 ◽  
Author(s):  
Varun Bheemireddy
Keyword(s):  
Space Charge ◽  
High Performance ◽  
Numerical Study ◽  
2D Materials ◽  
Space Charge Density ◽  
Two Dimensional ◽  
Short Channel ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
New Family

The two-dimensional(2D) materials are highly promising candidates to realise elegant and e cient transistor. In the present letter, we conjecture a novel co-planar metal-insulator-semiconductor(MIS) device(capacitor) completely based on lateral 2D materials architecture and perform numerical study of the capacitor with a particular emphasis on its di erences with the conventional 3D MIS electrostatics. The space-charge density features a long charge-tail extending into the bulk of the semiconductor as opposed to the rapid decay in 3D capacitor. Equivalently, total space-charge and semiconductor capacitance densities are atleast an order of magnitude more in 2D semiconductor. In contrast to the bulk capacitor, expansion of maximum depletion width in 2D semiconductor is observed with increasing doping concentration due to lower electrostatic screening. The heuristic approach of performance analysis(2D vs 3D) for digital-logic transistor suggest higher ON-OFF current ratio in the long-channel limit even without third dimension and considerable room to maximise the performance of short-channel transistor. The present results could potentially trigger the exploration of new family of co-planar at transistors that could play a signi significant role in the future low-power and/or high performance electronics.<br>

Novel secondary assembled porous MgCo2O4 for high-performance lithium storage

2019 ◽  
Vol 240 ◽  
pp. 225-228 ◽  
Author(s):  
Xin Wu ◽  
Yuan Bai ◽  
Min Zeng ◽  
Jing Li
Keyword(s):  
High Performance ◽  
Lithium Storage

scholarly journals Polarization-sensitive photodetectors based on three-dimensional molybdenum disulfide (MoS2) field-effect transistors

Nanophotonics ◽  
2020 ◽  
Vol 9 (16) ◽  
pp. 4719-4728
Author(s):  
Tao Deng ◽  
Shasha Li ◽  
Yuning Li ◽  
Yang Zhang ◽  
Jingye Sun ◽  
...  
Keyword(s):  
Molybdenum Disulfide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Three Dimensional ◽  
Polarized Light ◽  
Optical Field ◽  
Two Dimensional ◽  
Polarization Ratio ◽  
Two Dimensional Materials

AbstractThe molybdenum disulfide (MoS2)-based photodetectors are facing two challenges: the insensitivity to polarized light and the low photoresponsivity. Herein, three-dimensional (3D) field-effect transistors (FETs) based on monolayer MoS2 were fabricated by applying a self–rolled-up technique. The unique microtubular structure makes 3D MoS2 FETs become polarization sensitive. Moreover, the microtubular structure not only offers a natural resonant microcavity to enhance the optical field inside but also increases the light-MoS2 interaction area, resulting in a higher photoresponsivity. Photoresponsivities as high as 23.8 and 2.9 A/W at 395 and 660 nm, respectively, and a comparable polarization ratio of 1.64 were obtained. The fabrication technique of the 3D MoS2 FET could be transferred to other two-dimensional materials, which is very promising for high-performance polarization-sensitive optical and optoelectronic applications.

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