scholarly journals Two-Dimensional Cobalt-/Nickel-Based Oxide Nanosheets for High-Performance Sodium and Lithium Storage

2016 ◽  
Vol 22 (50) ◽  
pp. 18060-18065 ◽  
Author(s):  
Dan Zhang ◽  
Wenping Sun ◽  
Zhihui Chen ◽  
Yu Zhang ◽  
Wenbin Luo ◽  
...  
2020 ◽  
Vol 32 ◽  
pp. 105-114 ◽  
Author(s):  
Biao Huang ◽  
Huayu Wang ◽  
Shunfei Liang ◽  
Huizhen Qin ◽  
Yang Li ◽  
...  

2019 ◽  
Vol 7 (8) ◽  
pp. 3924-3932 ◽  
Author(s):  
Zhi Chen ◽  
Cun Wang ◽  
Min Chen ◽  
Changchun Ye ◽  
Zeheng Lin ◽  
...  

H2O/DMF solvent ratio-tuned MnO microflakes serve as high-performance lithium storage anodes, further improved by CNTs assisted-synthesis.


2019 ◽  
Vol 7 (40) ◽  
pp. 22950-22957 ◽  
Author(s):  
Junlong Huang ◽  
Kunyi Leng ◽  
Yongqi Chen ◽  
Luyi Chen ◽  
Shaohong Liu ◽  
...  

An interfacial crosslinking strategy to fabricate an ultrathin two-dimensional composite of silicon oxycarbide-enwrapped silicon nanoparticles for high-performance lithium storage.


2018 ◽  
Vol 6 (40) ◽  
pp. 19853-19862 ◽  
Author(s):  
Rujia Zou ◽  
Mingdong Xu ◽  
Shu-Ang He ◽  
Xiaoyu Han ◽  
Runjia Lin ◽  
...  

We report a new material and a structural configuration for lithium-ion batteries consisting of cobalt nickel nitride coated by a thin carbon layer anchoring on nitrogen-doped carbon nanotubes. The anode delivers excellent lithium storage properties.


2017 ◽  
Author(s):  
Varun Bheemireddy

The two-dimensional(2D) materials are highly promising candidates to realise elegant and e cient transistor. In the present letter, we conjecture a novel co-planar metal-insulator-semiconductor(MIS) device(capacitor) completely based on lateral 2D materials architecture and perform numerical study of the capacitor with a particular emphasis on its di erences with the conventional 3D MIS electrostatics. The space-charge density features a long charge-tail extending into the bulk of the semiconductor as opposed to the rapid decay in 3D capacitor. Equivalently, total space-charge and semiconductor capacitance densities are atleast an order of magnitude more in 2D semiconductor. In contrast to the bulk capacitor, expansion of maximum depletion width in 2D semiconductor is observed with increasing doping concentration due to lower electrostatic screening. The heuristic approach of performance analysis(2D vs 3D) for digital-logic transistor suggest higher ON-OFF current ratio in the long-channel limit even without third dimension and considerable room to maximise the performance of short-channel transistor. The present results could potentially trigger the exploration of new family of co-planar at transistors that could play a signi significant role in the future low-power and/or high performance electronics.<br>


2019 ◽  
Vol 240 ◽  
pp. 225-228 ◽  
Author(s):  
Xin Wu ◽  
Yuan Bai ◽  
Min Zeng ◽  
Jing Li

Nanophotonics ◽  
2020 ◽  
Vol 9 (16) ◽  
pp. 4719-4728
Author(s):  
Tao Deng ◽  
Shasha Li ◽  
Yuning Li ◽  
Yang Zhang ◽  
Jingye Sun ◽  
...  

AbstractThe molybdenum disulfide (MoS2)-based photodetectors are facing two challenges: the insensitivity to polarized light and the low photoresponsivity. Herein, three-dimensional (3D) field-effect transistors (FETs) based on monolayer MoS2 were fabricated by applying a self–rolled-up technique. The unique microtubular structure makes 3D MoS2 FETs become polarization sensitive. Moreover, the microtubular structure not only offers a natural resonant microcavity to enhance the optical field inside but also increases the light-MoS2 interaction area, resulting in a higher photoresponsivity. Photoresponsivities as high as 23.8 and 2.9 A/W at 395 and 660 nm, respectively, and a comparable polarization ratio of 1.64 were obtained. The fabrication technique of the 3D MoS2 FET could be transferred to other two-dimensional materials, which is very promising for high-performance polarization-sensitive optical and optoelectronic applications.


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