scholarly journals Selective access to either a doubly boron-doped tetrabenzopentacene or an oxadiborepin from the same precursor

2019 ◽  
Vol 10 (39) ◽  
pp. 9017-9027 ◽  
Author(s):  
Julian Radtke ◽  
Kai Schickedanz ◽  
Marcel Bamberg ◽  
Luigi Menduti ◽  
Dieter Schollmeyer ◽  
...  
Keyword(s):  
Boron Doped ◽  
Yamamoto Coupling ◽  
Selective Access

Depending on the solvent, a brominated arylborane gave the multiple helicene B2-TBPA (pyridine) or the oxadiborepin ODBE (THF) after intramolecular Yamamoto coupling.

scholarly journals A boron-doped helicene as a highly soluble, benchtop-stable green emitter

2015 ◽  
Vol 51 (87) ◽  
pp. 15808-15810 ◽  
Author(s):  
Kai Schickedanz ◽  
Timo Trageser ◽  
Michael Bolte ◽  
Hans-Wolfram Lerner ◽  
Matthias Wagner
Keyword(s):  
Boron Doped ◽  
Green Emitter ◽  
Yamamoto Coupling

Intramolecular Yamamoto coupling on a tetrabrominated triarylborane furnishes a highly fluorescent, soluble, air- and water-stable boron-doped [4]helicene.

Preparation of integrated circuits for TEM electromigration in situ studies

1986 ◽  
Vol 44 ◽  
pp. 882-883
Author(s):  
J. V. Maskowitz ◽  
W. E. Rhoden ◽  
D. R. Kitchen ◽  
R. E. Omlor ◽  
P. F. Lloyd
Keyword(s):  
Integrated Circuits ◽  
Crystallographic Orientation ◽  
Silicon Wafers ◽  
Minimum Size ◽  
Test Vehicle ◽  
In Situ Studies ◽  
Boron Doped ◽  
Doped Silicon ◽  
Drill Holes

The fabrication of the aluminum bridge test vehicle for use in the crystallographic studies of electromigration involves several photolithographic processes, some common, while others quite unique. It is most important to start with a clean wafer of known orientation. The wafers used are 7 mil thick boron doped silicon. The diameter of the wafer is 1.5 inches with a resistivity of 10-20 ohm-cm. The crystallographic orientation is (111).Initial attempts were made to both drill and laser holes in the silicon wafers then back fill with photoresist or mounting wax. A diamond tipped dentist burr was used to successfully drill holes in the wafer. This proved unacceptable in that the perimeter of the hole was cracked and chipped. Additionally, the minimum size hole realizable was > 300 μm. The drilled holes could not be arrayed on the wafer to any extent because the wafer would not stand up to the stress of multiple drilling.

A TEM-APFIM INVESTIGATION OF BORON-DOPED Ni3Al

1986 ◽  
Vol 47 (C2) ◽  
pp. C2-209-C2-214 ◽  
Author(s):  
J. A. HORTON ◽  
M. K. MILLER
Keyword(s):  
Boron Doped

Atomic and Electronic Structure of Boron-Doped Diamond Grain Boundaries Studied by Arhvtem and ab-Initio Calculation

2003 ◽  
Vol 764 ◽  
Author(s):  
Hiroyuki Togawa ◽  
Hideki Ichinose
Keyword(s):  
Ab Initio ◽  
Grain Boundaries ◽  
Ab Initio Calculation ◽  
Structure Model ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
Transmission Electron ◽  
Diamond Grain ◽  
Electron Energy Loss ◽  
Atomic And Electronic Structure

AbstractAtomic resolution high-voltage transmission electron microscopy and electron energy loss spectroscopy were performed on grain boundaries of boron-doped diamond, cooperated with the ab-initio calculation. Segregated boron in the {112}∑3 boundary was caught by the EELS spectra. The change in atomic structure of the segregated boundary was successfully observed from the image by ARHVTEM. Based on the ARHVTEM image, a segregted structure model was proposed.

DICLOFENAC REMOVAL FROM AQUEOUS SOLUTIONS BY ELECTROOXIDATION AT BORON-DOPED DIAMOND (BDD) ELECTRODE

2015 ◽  
Vol 14 (6) ◽  
pp. 1339-1345
Author(s):  
Monica Ihos ◽  
Florica Manea ◽  
Maria Jitaru ◽  
Corneliu Bogatu ◽  
Rodica Pode
Keyword(s):  
Aqueous Solutions ◽  
Boron Doped Diamond ◽  
Bdd Electrode ◽  
Boron Doped

scholarly journals Deposition of Boron-Doped Thin CVD Diamond Films from Methane-Triethyl Borate-Hydrogen Gas Mixture

Processes ◽  
2020 ◽  
Vol 8 (6) ◽  
pp. 666 ◽  
Author(s):  
Nikolay Ivanovich Polushin ◽  
Alexander Ivanovich Laptev ◽  
Boris Vladimirovich Spitsyn ◽  
Alexander Evgenievich Alexenko ◽  
Alexander Mihailovich Polyansky ◽  
...  
Keyword(s):  
Film Growth ◽  
Chemical Vapor ◽  
Hydrogen Gas ◽  
Diamond Growth ◽  
Structural Defects ◽  
Boron Doped Diamond ◽  
Diamond Deposition ◽  
Synthesis Conditions ◽  
Surface Etching ◽  
Boron Doped

Boron-doped diamond is a promising semiconductor material that can be used as a sensor and in power electronics. Currently, researchers have obtained thin boron-doped diamond layers due to low film growth rates (2–10 μm/h), with polycrystalline diamond growth on the front and edge planes of thicker crystals, inhomogeneous properties in the growing crystal’s volume, and the presence of different structural defects. One way to reduce structural imperfection is the specification of optimal synthesis conditions, as well as surface etching, to remove diamond polycrystals. Etching can be carried out using various gas compositions, but this operation is conducted with the interruption of the diamond deposition process; therefore, inhomogeneity in the diamond structure appears. The solution to this problem is etching in the process of diamond deposition. To realize this in the present work, we used triethyl borate as a boron-containing substance in the process of boron-doped diamond chemical vapor deposition. Due to the oxygen atoms in the triethyl borate molecule, it became possible to carry out an experiment on simultaneous boron-doped diamond deposition and growing surface etching without the requirement of process interruption for other operations. As a result of the experiments, we obtain highly boron-doped monocrystalline diamond layers with a thickness of about 8 μm and a boron content of 2.9%. Defects in the form of diamond polycrystals were not detected on the surface and around the periphery of the plate.

Polycrystalline boron-doped diamond-based electrochemical biosensor for simultaneous detection of dopamine and melatonin

2020 ◽  
Vol 1135 ◽  
pp. 73-82 ◽  
Author(s):  
Zhen Yang ◽  
Mingji Li ◽  
Hongji Li ◽  
Huayi Li ◽  
Cuiping Li ◽  
...  
Keyword(s):  
Electrochemical Biosensor ◽  
Simultaneous Detection ◽  
Boron Doped Diamond ◽  
Boron Doped

scholarly journals Synthesis of Boron-Doped Silicon Film Using Hot Wire Chemical Vapor Deposition Technique

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 237
Author(s):  
M. Abul Hossion ◽  
B. M. Arora
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Deposition Technique ◽  
Boron Doped ◽  
Vapor Deposition Technique ◽  
Polycrystalline Silicon Film

Boron-doped polycrystalline silicon film was synthesized using hot wire chemical vapor deposition technique for possible application in photonics devices. To investigate the effect of substrate, we considered Si/SiO2, glass/ITO/TiO2, Al2O3, and nickel tungsten alloy strip for the growth of polycrystalline silicon films. Scanning electron microscopy, optical reflectance, optical transmittance, X-ray diffraction, and I-V measurements were used to characterize the silicon films. The resistivity of the film was 1.3 × 10−2 Ω-cm for the polycrystalline silicon film, which was suitable for using as a window layer in a solar cell. These films have potential uses in making photodiode and photosensing devices.

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