scholarly journals Step-by-step monitoring of CVD-graphene during wet transfer by Raman spectroscopy

RSC Advances ◽  
2019 ◽  
Vol 9 (71) ◽  
pp. 41447-41452 ◽  
Author(s):  
Zehao Wu ◽  
Xuewei Zhang ◽  
Atanu Das ◽  
Jinglan Liu ◽  
Zhenxing Zou ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Si Substrate ◽  
Cvd Graphene ◽  
Grown Graphene

The quality evolution of as-grown graphene during wet transfer from Cu to SiO2/Si substrate is investigated by Raman spectroscopy and the relavant factors during this process are identified.

Raman spectroscopy of strongly doped CVD-graphene

2013 ◽  
Vol 250 (12) ◽  
pp. 2659-2661 ◽  
Author(s):  
Zuzana Komínková ◽  
Martin Kalbáč
Keyword(s):  
Raman Spectroscopy ◽  
Cvd Graphene

Raman spectroscopy of CVD graphene during transfer process from copper to SiO2/Si substrates

2018 ◽  
Vol 6 (1) ◽  
pp. 015601 ◽  
Author(s):  
C Bautista-Flores ◽  
R Y Sato-Berrú ◽  
D Mendoza
Keyword(s):  
Raman Spectroscopy ◽  
Transfer Process ◽  
Cvd Graphene ◽  
Si Substrates

Investigation of Oxygen Vacancies in Micro-Patterned PZT Thin Films Using Raman Spectroscopy

2009 ◽  
Vol 421-422 ◽  
pp. 135-138
Author(s):  
Ken Nishida ◽  
Minoru Osada ◽  
Shintaro Yokoyama ◽  
Takafumi Kamo ◽  
Takashi Fujisawa ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Oxygen Vacancies ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray ◽  
Vapor Phase Deposition ◽  
Pzt Films ◽  
Metal Organic

Micro-patterned Pb(Zr,Ti)O3 (PZT) films with dot-pattern were grown by metal organic chemical vapor phase deposition (MOCVD). Micro-patterned Pb(Zr,Ti)O3 (PZT) films were formed on dot-patterned SrRuO3 (SRO) buffer layer that was prepared by MOCVD through the metal mask on (111)Pt/Ti/SiO2/Si substrate. The orientation of dot-patterned PZT films was ascertained by the micro-beam x-ray diffraction (XRD) and their crystallinity was characterized by Raman spectroscopy. It was found that PZT films were oriented to (111) on dot-pattern, while (100)/(001) out of dot-pattern and the amount of oxygen vacancies at the circumference of the dot-pattern were larger than that of center of dot-pattern.

scholarly journals Understanding and optimising the packing density of perylene bisimide layers on CVD-grown graphene

Nanoscale ◽  
2015 ◽  
Vol 7 (39) ◽  
pp. 16337-16342 ◽  
Author(s):  
Nina C. Berner ◽  
Sinéad Winters ◽  
Claudia Backes ◽  
Chanyoung Yim ◽  
Kim C. Dümbgen ◽  
...  
Keyword(s):  
Packing Density ◽  
Cvd Graphene ◽  
Perylene Bisimide ◽  
Grown Graphene

We observe and characterise contamination-related differences in the packing density of wet-chemically deposited perylene bisimide derivatives on CVD graphene.

Probing carrier concentration in gated single, bi- and tri-layer CVD graphene using Raman spectroscopy

Carbon ◽  
2019 ◽  
Vol 149 ◽  
pp. 390-399 ◽  
Author(s):  
Rachid Fates ◽  
Hachemi Bouridah ◽  
Jean-Pierre Raskin
Keyword(s):  
Raman Spectroscopy ◽  
Carrier Concentration ◽  
Cvd Graphene

A case study: effect of defects in CVD-grown graphene on graphene enhanced Raman spectroscopy

RSC Advances ◽  
2015 ◽  
Vol 5 (77) ◽  
pp. 62772-62777 ◽  
Author(s):  
Jong-Chul Yoon ◽  
Pradheep Thiyagarajan ◽  
Hyo-Jin Ahn ◽  
Ji-Hyun Jang
Keyword(s):  
Raman Spectroscopy ◽  
Signal Enhancement ◽  
Grown Graphene

PMMA-transferred graphene provides much larger GERS signal enhancement than TRT-transferred graphene.

Insights into the effects of metal nanostructuring and oxidation on the work function and charge transfer of metal/graphene hybrids

Nanoscale ◽  
2015 ◽  
Vol 7 (30) ◽  
pp. 12868-12877 ◽  
Author(s):  
M. M. Giangregorio ◽  
W. Jiao ◽  
G. V. Bianco ◽  
P. Capezzuto ◽  
A. S. Brown ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Charge Transfer ◽  
Work Function ◽  
Spectroscopic Ellipsometry ◽  
Cvd Graphene ◽  
Non Invasive

Charge transfer between CVD graphene and thin films and nanoparticles of various sizes of Al, Ga, Au, Cu and Ag was probed by various corroborating non-invasive approaches of KPFM, Raman spectroscopy and plasmonic spectroscopic ellipsometry.

scholarly journals Modification of Electric Transport Properties of CVD Graphene by Electrochemical Deposition of Cobalt Nanoparticles

2019 ◽  
Vol 18 (03n04) ◽  
pp. 1940041 ◽  
Author(s):  
V. Bayev ◽  
J. Fedotova ◽  
U. Humennik ◽  
S. Vorobyova ◽  
A. Konakow ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transport Properties ◽  
Electrochemical Deposition ◽  
Carrier Transport ◽  
Cobalt Nanoparticles ◽  
Electric Transport ◽  
Si Substrate ◽  
Cvd Graphene ◽  
Scanning Electron ◽  
Carrier Transport Properties

Electrochemical deposition of cobalt nanoparticles was used to modify carrier transport properties of single-layered CVD graphene at the SiO2-on-Si substrate. The structure of graphene with cobalt nanoparticles was analyzed by Raman spectroscopy and scanning electron microscopy. The effect of the deposited cobalt nanoparticles on the sheet resistance of graphene was studied in the temperature range of 4–300[Formula: see text]K.

scholarly journals High-yield fabrication of nm-size gaps in monolayer CVD graphene

Nanoscale ◽  
2014 ◽  
Vol 6 (13) ◽  
pp. 7249-7254 ◽  
Author(s):  
Cornelia Nef ◽  
László Pósa ◽  
Péter Makk ◽  
Wangyang Fu ◽  
András Halbritter ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Single Layer ◽  
High Yield ◽  
Cvd Graphene

Herein we demonstrate the controlled and reproducible fabrication of sub-5 nm wide gaps in single-layer CVD graphene electrodes with an electroburning process and inferred the temperatures during the electroburning using Raman spectroscopy.

scholarly journals Super-Resolution Raman Spectroscopy by Digital Image Processing

2013 ◽  
Vol 2013 ◽  
pp. 1-9 ◽  
Author(s):  
Motohiro Tomita ◽  
Hiroki Hashiguchi ◽  
Takuya Yamaguchi ◽  
Munehisa Takei ◽  
Daisuke Kosemura ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Spatial Resolution ◽  
Numerical Aperture ◽  
Super Resolution ◽  
Force Model ◽  
Stress Distributions ◽  
Si Substrate ◽  
Resolution Method ◽  
Strained Si ◽  
Edge Force

We demonstrate the results of a strain (stress) evaluation obtained from Raman spectroscopy measurements with the super-resolution method (the so-called super-resolution Raman spectroscopy) for a Si substrate with a patterned SiN film (serving as a strained Si sample). To improve the spatial resolution of Raman spectroscopy, we used the super-resolution method and a high-numerical-aperture immersion lens. Additionally, we estimated the spatial resolution by an edge force model (EFM) calculation. One- and two-dimensional stress distributions in the Si substrate with the patterned SiN film were obtained by super-resolution Raman spectroscopy. The results from both super-resolution Raman spectroscopy and the EFM calculation were compared and were found to correlate well. The best spatial resolution, 70 nm, was achieved by super-resolution Raman measurements with an oil immersion lens. We conclude that super-resolution Raman spectroscopy is a useful method for evaluating stress in miniaturized state-of-the-art transistors, and we believe that the super-resolution method will soon be a requisite technique.

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